公开(公告)号：US08802550B2

公开(公告)日：2014-08-12

申请号：US13603584

申请日：2012-09-05

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： H01L21/22 ,  H01L21/38 ,  H01L21/24 ,  H01L21/40 ,  H01L21/00 ,  H01L21/145 ,  H01L21/16

CPC分类号： H01L21/67115 ,  H01L21/26513 ,  H01L21/2686

摘要： First flash irradiation from flash lamps is performed on an upper surface of a semiconductor wafer supported on a temperature equalizing ring of a holder to cause the semiconductor wafer to jump up from the temperature equalizing ring into midair. While the semiconductor wafer is in midair above the temperature equalizing ring, second flash irradiation from the flash lamps is performed on the upper surface of the semiconductor wafer to increase the temperature of the upper surface of the semiconductor wafer to a treatment temperature. Cracking in the semiconductor wafer is prevented because the second flash irradiation is performed while the semiconductor wafer is in midair and subject to no restraints.

摘要翻译： 在支撑在保持器的温度均衡环上的半导体晶片的上表面上进行来自闪光灯的第一闪光照射，以使半导体晶片从温度均衡环向上跳跃到空中。 当半导体晶片处于温度均衡环的空中时，在半导体晶片的上表面上执行来自闪光灯的第二闪光照射，以将半导体晶片的上表面的温度升高到处理温度。 由于在半导体晶片处于空中并且不受约束的情况下执行第二闪光照射，所以防止了半导体晶片的破裂。

公开(公告)号：US3040701A

公开(公告)日：1962-06-26

申请号：US82292659

申请日：1959-06-25

申请人： CONFORMING MATRIX CORP

发明人： MINNICK GERALD D ,  MOLLY DANIEL G

IPC分类号： B05B15/04 ,  H01C17/02 ,  H01G13/00 ,  H01L21/145

CPC分类号： H01L21/145 ,  B05B15/045 ,  H01C17/02 ,  H01G13/00

公开(公告)号：US2456758A

公开(公告)日：1948-12-21

申请号：US61315345

申请日：1945-08-28

申请人： HARTFORD NAT BANK & TRUST CO

发明人： GEEL WILLEM CHRISTIAAN VAN

IPC分类号： H01L21/108 ,  H01L21/145

CPC分类号： H01L21/145 ,  H01L21/108

公开(公告)号：US10813209B2

公开(公告)日：2020-10-20

申请号：US16011708

申请日：2018-06-19

申请人： Murata Manufacturing Co., Ltd.

发明人： Shuichi Kezuka ,  Kuniaki Yosui

IPC分类号： H05K1/02 ,  H05K1/11 ,  H05K1/18 ,  H05K3/40 ,  H05K3/46 ,  H01L23/367 ,  H01L23/538 ,  H01L21/48 ,  H01L21/145 ,  H01L23/373 ,  H01L23/498 ,  H01L23/14

摘要： A multilayer substrate includes a base including insulating layers stacked on one another, a first principal surface, and a second principal surface, a heat transfer member extending through a first insulating layer nearest to the first principal surface, a second coefficient of thermal conductivity of a material of the heat transfer member is higher than a first coefficient of thermal conductivity of a material of the insulating layers, a first metal film adhered to the first principal surface, the first metal film overlapping the heat transfer member when viewed from the layer stacking direction, and a first joining member disposed between the heat transfer member and the first metal film and being made of a material with a coefficient of thermal conductivity which is higher than the first coefficient of thermal conductivity of the material of the insulating layers.

公开(公告)号：US2842830A

公开(公告)日：1958-07-15

申请号：US45661054

申请日：1954-09-16

申请人： INT STANDARD ELECTRIC CORP

发明人： KLEIN OTTO J

IPC分类号： H01L21/12 ,  H01L21/14 ,  H01L21/145

CPC分类号： H01L21/14 ,  H01L21/12 ,  H01L21/145

公开(公告)号：US2585014A

公开(公告)日：1952-02-12

申请号：US62494645

申请日：1945-10-26

申请人： STANDARD TELEPHONES CABLES LTD

发明人： JUVRUD MERLIN O

IPC分类号： H01L21/108 ,  H01L21/145

CPC分类号： H01L21/145 ,  H01L21/02521 ,  H01L21/02625 ,  H01L21/02667 ,  H01L21/108

公开(公告)号：US08178397B2

公开(公告)日：2012-05-15

申请号：US11719096

申请日：2005-11-10

申请人： Shinji Aramaki ,  Ryuichi Yoshiyama ,  Akira Ohno ,  Yoshimasa Sakai

发明人： Shinji Aramaki ,  Ryuichi Yoshiyama ,  Akira Ohno ,  Yoshimasa Sakai

IPC分类号： H01L51/40 ,  H01L21/145

CPC分类号： H01L51/0077 ,  H01L21/0212 ,  H01L21/02282 ,  H01L21/3127 ,  H01L51/0512 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  Y10T436/107497 ,  Y10T436/148888

摘要： A field effect transistor including a gate insulation portion, an organic semiconductor portion, a source electrode and a drain electrode, wherein when a voltage is applied to the gate at 70° C. for 5.0±0.1 hours so that the field strength in the gate insulation portion would be 100±5 MV/m, the change in the threshold voltage is within 5 V. The organic semiconductor portion has a high driving stability, of which the change in characteristics by driving is thereby small.

摘要翻译： 一种场效应晶体管，包括栅极绝缘部分，有机半导体部分，源电极和漏电极，其中当在70℃下对栅极施加电压5.0±0.1小时，使得栅极中的场强 绝缘部分为100±5MV / m，阈值电压的变化在5V以内。有机半导体部分具有较高的驱动稳定性，其驱动特性的变化因此变小。

公开(公告)号：US4609428A

公开(公告)日：1986-09-02

申请号：US756233

申请日：1985-07-18

申请人： Shuzo Fujimura

发明人： Shuzo Fujimura

IPC分类号： H01L21/302 ,  H01J37/305 ,  H01J37/32 ,  H01L21/145 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01J37/32623 ,  H01J37/3053 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678

摘要： A microwave plasma etching method and apparatus for performing substantially anisotropic etching to form micropatterns on IC substrates. A microwave power source creates a plasma from a gas with a relatively low pressure such as 10.sup.-3 to 10.sup.-4 Torr, so that the mean free path of the gas molecules exceeds the dimensions of the etching apparatus. A magnetic field is generated in a plasma generating chamber, a reaction chamber where in the substrate is mounted and a connecting chamber. The plasma discharge is enhanced by a cyclotron resonance magnetic field intensity corresponding to the frequency of the microwave power applied to the plasma chamber. The magnetic field creates a magnetic mirror which prevents the electrons in the plasma from entering into the reaction chamber so as to eliminate the generation of free radicals in which the reaction chamber which adversely affect the anisotropic etching ability.

摘要翻译： 微波等离子体蚀刻方法和装置，用于进行基本上各向异性的蚀刻以在IC基板上形成微图案。 微波功率源由具有相对较低压力（例如10-3至10-4乇）的气体产生等离子体，使得气体分子的平均自由程超过蚀刻设备的尺寸。 在等离子体发生室，安装基板的反应室和连接室中产生磁场。 通过与施加到等离子体室的微波功率的频率对应的回旋共振磁场强度来增强等离子体放电。 磁场产生磁反射镜，防止等离子体中的电子进入反应室，以消除反应室产生不利影响各向异性蚀刻能力的自由基。

公开(公告)号：US2502540A

公开(公告)日：1950-04-04

申请号：US61791745

申请日：1945-09-21

申请人： HARTFORD NAT BANK & TRUST CO

发明人： AMS JOHANNES JACOBUS ASUERUS P

IPC分类号： H01L21/145

CPC分类号： H01L21/145

摘要： 633,346. Asymmetrically conducting resistances. NAAMLOOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN. Aug. 30, 1946, No. 26160. Convention date, Feb. 22, 1943. Drawings to Specification. [Class 37] In a blocking layer cell of the selenium type having .a first electrode comprising a carrier plate on which a semi-conductive layer and a second electrode are mounted, the second electrode is coated with a layer of lacquer and the cell is then subjected to heating between 100‹ and 200‹ C. In the preferred method a galvanized aluminium carrier sheet coated with a carbon film has a layer of selenium applied to it, and small discs punched from the sheet are provided with small gold electrodes by sputtering. The discs are then sprayed with a solution of polystyrene, dried and heated in air to 170‹ C. for about half-an-hour. Specification 632,166 is referred to.

公开(公告)号：US2246161A

公开(公告)日：1941-06-17

申请号：US27750239

申请日：1939-06-05

申请人： GEN ELECTRIC

发明人： HEINRICH ADENSTEDT ,  HEINZ WITTKE

IPC分类号： H01L21/12 ,  H01L21/145

CPC分类号： H01L21/12 ,  H01L21/145