公开(公告)号：US4426704A

公开(公告)日：1984-01-17

申请号：US317592

申请日：1981-11-02

申请人： Haruo Nagai ,  Yoshio Noguchi ,  Kenichiro Takahei

发明人： Haruo Nagai ,  Yoshio Noguchi ,  Kenichiro Takahei

IPC分类号： H01S5/00 ,  H01L27/15 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/227 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4043 ,  H01L27/15 ,  H01S5/0422 ,  H01S5/06206 ,  H01S5/2275

摘要： In a semiconductor laser, a laminated multi-layer body is on a prescribed region of the surface of a semiconductor substrate of first conductivity type, and a burying laminated layer body surrounds the laminated layer body in contact with the lateral wall thereof. The laminated layer body includes a first cladding layer having the first conductivity type, a first active layer, a second cladding layer having the opposite conductivity type (second conductivity type) to that of the semiconductor substrate, a second active layer and a third cladding layer of the first conductivity type. The burying laminated layer body includes a semiconductor electrode layer of the second conductivity type and low specific resistivity which substantially contacts the second cladding layer, and two groups of burying layers respectively provided on the prescribed regions of the top and bottom surface of said semiconductor electrode layer. When a prescribed amount of direct current is supplied to a first electrode mounted on the upper side of the laminated layer body, a second electrode deposited on the bottom side of said laminated layer body and a third electrode set on the semiconductor electrode layer included in the burying layer body, then the first and second active layers arranged very close to each other simultaneously oscillate two independent laser beams admitting of modulation with a low threshold current value.

摘要翻译： 在半导体激光器中，叠层多层体位于第一导电型的半导体衬底的表面的规定区域上，并且埋层层叠体围绕层叠体与其侧壁接触。 叠层体包括具有第一导电类型的第一包层，第一有源层，具有与半导体衬底相反的导电类型（第二导电类型）的第二覆层，第二有源层和第三覆层 的第一导电类型。 埋入叠层体包括第二导电类型的半导体电极层和与第二覆层基本接触的低电阻率，以及分别设置在所述半导体电极层的顶表面和底表面的规定区域上的两组掩埋层 。 当向安装在层叠体主体的上侧的第一电极提供预定量的直流电流时，沉积在所述叠层体的底侧上的第二电极和设置在所述层叠体主体的半导体电极层上的第三电极 埋置层体，则彼此非常接近地布置的第一和第二有源层同时振荡允许具有低阈值电流值的调制的两个独立激光束。