公开(公告)号：US20230238777A1

公开(公告)日：2023-07-27

申请号：US18095891

申请日：2023-01-11

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/00

CPC classification number: H01S5/34333 ,  H01S5/22 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/2081 ,  H01S5/3211 ,  H01S5/32025 ,  H01S5/3202 ,  H01S5/0087 ,  H01S5/2009 ,  H01S5/4043

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US09985174B2

公开(公告)日：2018-05-29

申请号：US15173511

申请日：2016-06-03

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Mikhail V. Kisin ,  Yea-Chuan Milton Yeh ,  Chih-Li Chuang ,  Jyh-Chia Chen

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01S5/042 ,  H01S5/343 ,  H01S5/20 ,  H01S5/10 ,  H01S5/34 ,  H01S5/40

CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/1096 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4093

Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

公开(公告)号：US09966729B2

公开(公告)日：2018-05-08

申请号：US14475914

申请日：2014-09-03

Applicant: Mitsubishi Electric Corporation

Inventor： Mitoru Yabe

IPC: H01S5/022 ,  H01S5/40 ,  H01S5/024

CPC classification number: H01S5/02252 ,  H01S5/02208 ,  H01S5/02248 ,  H01S5/02256 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/4012 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/405

Abstract: A laser light source module includes: a plate-shaped stem; a power supply lead pin having an upper end protruding from an upper surface being one of main surfaces of the stem and a lower end penetrating to extend toward a lower surface side, the lower surface being the other of the main surface of the stem; a block fixed to the upper surface of the stem; a submount substrate that is fixed to a surface of the block and includes the semiconductor laser array mounted thereon, the surface being parallel to the upper surface of the stem; the semiconductor laser array located on the submount substrate such that a light emitting direction is parallel to the upper surface of the stem; and a collimator lens array that is located on a front surface of the semiconductor laser array and converts an output light beam of the semiconductor laser array into a parallel light beam.

公开(公告)号：US09065237B2

公开(公告)日：2015-06-23

申请号：US13313490

申请日：2011-12-07

Applicant: James Yonghong Guo ,  Jay A. Skidmore ,  Lei Xu ,  Jane Cheng

Inventor： James Yonghong Guo ,  Jay A. Skidmore ,  Lei Xu ,  Jane Cheng

IPC: H01S5/02 ,  H01S5/40 ,  H01S5/022 ,  H01S5/00

CPC classification number: H01S5/02252 ,  H01S5/005 ,  H01S5/4012 ,  H01S5/4043

Abstract: Multi-mode diode emitters are stacked in a staircase formation to provide a spatially-multiplexed output. Improved coupling efficiency is achieved by providing tilted collimated output beams that determine an effective step height of the stepped structure. Since the effective step height is dependent on the tilt angle, a variable number of emitters can be used inside packages having a same physical step height, while still attaining high coupling efficiency.

Abstract translation: 多模二极管发射器堆叠在阶梯形式中以提供空间复用输出。 通过提供确定阶梯式结构的有效步长的倾斜的准直输出光束来实现改进的耦合效率。 由于有效步高取决于倾斜角度，所以在具有相同物理台阶高度的包装内可以使用可变数量的发射器，同时仍然获得高耦合效率。

公开(公告)号：US09018641B2

公开(公告)日：2015-04-28

申请号：US12745686

申请日：2008-10-24

Applicant: Peter Brick ,  Uwe Strauss

Inventor： Peter Brick ,  Uwe Strauss

IPC: H01L29/49 ,  H01S5/32 ,  H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/30 ,  H01S5/40

CPC classification number: H01S5/1082 ,  H01S5/0035 ,  H01S5/10 ,  H01S5/1017 ,  H01S5/204 ,  H01S5/3095 ,  H01S5/32 ,  H01S5/3215 ,  H01S5/4043 ,  H01S2301/18 ,  H01S2301/185 ,  H01S2301/206

Abstract: A method for manufacturing a radiation-emitting component (1) in which a field distribution of a near field (101, 201) in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile (111, 211, 511) along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

Abstract translation: 一种用于制造辐射发射部件（1）的方法，其中指定了在与部件的主发射轴垂直的方向上的近场（101,201）的场分布。 根据近场的场分布，确定沿该方向的折射率分布（111,211,511）的折射率。 确定组件的结构，使得组件将具有先前确定的折射率曲线。 该组件根据先前确定的结构构造。 还公开了一种辐射发射元件。

公开(公告)号：US08737441B2

公开(公告)日：2014-05-27

申请号：US13378294

申请日：2010-05-07

Applicant: Xingsheng Liu

Inventor： Xingsheng Liu

IPC: H01S3/04

CPC classification number: H01S5/02423 ,  H01L23/473 ,  H01L2924/0002 ,  H01S5/02264 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/4025 ,  H01S5/4043 ,  H01L2924/00

Abstract: This invention relates to semiconductor lasers, and more particularly, to a cooling module for fabricating a liquid-cooled semiconductor laser, a fabricating method, and a semiconductor laser fabricated from the module, wherein the cooling module for a laser makes use of a liquid cooling plate provided with radiating fins to cool the semiconductor chip. After replacement of the traditional micro-channel structure with the radiating fin structure, the present invention effectively reduces the resistance to flow of the cooling liquid, remarkably lowers the pressure decrease of the cooling liquid, makes it easier to seal the cooling liquid, provides stronger heat dissipating capability, effectively elongates the lifetime of the semiconductor laser, and enhances the output power and reliability of the semiconductor laser, alongside the advantages of simple fabrication and low production cost.

Abstract translation: 本发明涉及半导体激光器，更具体地说，涉及一种用于制造液冷半导体激光器的冷却模块，制造方法和由该模块制造的半导体激光器，其中激光器用冷却模块利用液体冷却 板上设有散热片以冷却半导体芯片。 在用散热片结构替代传统的微通道结构后，本发明有效地降低了冷却液流动的阻力，显着降低了冷却液的压力降低，使得冷却液更容易密封，提供了更强的 散热能力，有效延长了半导体激光器的使用寿命，提高了半导体激光器的输出功率和可靠性，以及简单的制造和低生产成本的优点。

公开(公告)号：US08619825B2

公开(公告)日：2013-12-31

申请号：US12706833

申请日：2010-02-17

Applicant: Hiroyuki Fukasawa ,  Hiroshi Nishida

Inventor： Hiroyuki Fukasawa ,  Hiroshi Nishida

IPC: H01S3/04 ,  H01S3/042

CPC classification number: H01S3/0405 ,  H01L23/055 ,  H01L24/34 ,  H01L24/37 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02264 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/4043 ,  H01S5/4087 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device reliably supplying electric power to a light-emitting element on a supporting base and securing heat dissipation, and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a light-emitting element arranged on a first supporting base; a package covering the first supporting base and the light-emitting element therewith, and supporting the first supporting base; and a thermal conductive member having ends which are bonded to the light-emitting element and the package, respectively, so as to also have a wiring function.

Abstract translation: 一种可靠地向支撑基座上的发光元件提供电力并确保散热的发光装置，以及制造该发光装置的方法。 发光装置包括：配置在第一支撑基座上的发光元件; 封装所述第一支撑基座和所述发光元件的封装，并支撑所述第一支撑基座; 以及分别具有接合到发光元件和封装的端部的导热构件，以便也具有布线功能。

公开(公告)号：US20130163632A1

公开(公告)日：2013-06-27

申请号：US13723845

申请日：2012-12-21

Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.

Inventor： Rie Arai ,  Akinori Shiraishi

IPC: H01S5/022

CPC classification number: H01S5/022 ,  H01S5/005 ,  H01S5/02272 ,  H01S5/02492 ,  H01S5/4018 ,  H01S5/4043

Abstract: A light emitting device includes: a first light emitting element mounting unit including: a first substrate; a first light emitting element on a first surface of the first substrate; and a first substrate holder which includes a first column, and a first protrusion which extends from the first column toward the first light emitting element and bonded to the first surface of the first substrate; and a second light emitting element mounting unit including: a second substrate; a second light emitting element mounted on a first surface of the second substrate; and a second substrate holder which includes: a second column, and a second protrusion which extends from the second column toward the second light emitting element and bonded to the first surface of the second substrate. The second light emitting element mounting unit is stacked on the first light emitting element mounting unit.

Abstract translation: 发光器件包括：第一发光元件安装单元，包括：第一基板; 在所述第一基板的第一表面上的第一发光元件; 以及第一衬底保持器，其包括第一柱和从第一柱朝向第一发光元件延伸并且接合到第一衬底的第一表面的第一突起; 以及第二发光元件安装单元，包括：第二基板; 安装在所述第二基板的第一表面上的第二发光元件; 以及第二基板保持器，其包括：第二列，以及从所述第二列朝向所述第二发光元件延伸并且接合到所述第二基板的所述第一表面的第二突起。 第二发光元件安装单元堆叠在第一发光元件安装单元上。

公开(公告)号：US08406265B2

公开(公告)日：2013-03-26

申请号：US12679892

申请日：2008-08-29

Applicant: Matthias Sabathil ,  Peter Brick ,  Christoph Eichler

Inventor： Matthias Sabathil ,  Peter Brick ,  Christoph Eichler

IPC: H01S5/00 ,  H01S3/091

CPC classification number: H01S5/041 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/34 ,  H01S5/4043

Abstract: An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).

Abstract translation: 规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵浦区域（3）彼此上下排列。 在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。 在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。

公开(公告)号：US08194712B2

公开(公告)日：2012-06-05

申请号：US12217100

申请日：2008-06-30

Applicant: Martin Müller ,  Günther Grönninger ,  Alexander Behres

Inventor： Martin Müller ,  Günther Grönninger ,  Alexander Behres

IPC: H01S5/00

CPC classification number: H01S5/4043 ,  H01S5/3095 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/4018

Abstract: A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate (3) comprised of GaAs, has at least two laser stacks (4a, 4b, 4c) which are arranged one above another and which each contain an active zone (7). The active zone (7) is in each case arranged between waveguide layers (8). The waveguide layers (8) each adjoin a cladding layer (6) at a side remote from the active zone. At least one of the waveguide layers (8) or cladding layers (6) of at least one laser stack (4a, 4b, 4c), comprises AlxGa1-xAs, where 0≦x≦1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer (8) or cladding layer (6) comprising the at least one additional element and the semiconductor substrate (3) composed of GaAs is reduced. This increases the lifetime of the laser diode chip.

Abstract translation: 具有构造为多光束激光二极管的单片集成激光二极管芯片，其在由GaAs构成的半导体衬底（3）上具有至少两个激光堆叠（4a，4b，4c） 每个都包含活动区域（7）。 有源区（7）分别布置在波导层（8）之间。 每个波导层（8）在远离有源区的一侧与包层（6）相邻。 至少一个激光堆叠（4a，4b，4c）的至少一个波导层（8）或包覆层（6）包括Al x Ga 1-x As，其中0和n 1; x 1和n 1;以及至少一个来自主体的附加材料 III或V族，使得包含至少一个附加元件的至少一个波导层（8）或包层（6）与由GaAs构成的半导体衬底（3）之间的晶格失配减小。 这增加了激光二极管芯片的寿命。