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    Eliminating unwanted optical output power from a multi-device tunable laser by using a wavelength blocking component
    2.
    发明授权
    Eliminating unwanted optical output power from a multi-device tunable laser by using a wavelength blocking component 有权
    通过使用波长阻挡组件，从多器件可调谐激光器消除不需要的光输出功率

    公开(公告)号：US09502860B1

    公开(公告)日：2016-11-22

    申请号：US14211593

    申请日：2014-03-14

    申请人： Michael Minneman

    发明人： Michael Minneman

    IPC分类号： H01S5/06 ,  H01S5/062 ,  H01S5/14 ,  H01S3/10 ,  H01S3/08 ,  H01S3/067 ,  H01S5/40

    CPC分类号： H01S5/06 ,  H01S3/0675 ,  H01S3/08009 ,  H01S3/10023 ,  H01S3/1003 ,  H01S5/0078 ,  H01S5/02284 ,  H01S5/06206 ,  H01S5/141 ,  H01S5/4012 ,  H01S5/4087

    摘要： A tunable swept multi-laser system comprising a first laser source, a second laser source, a first wavelength blocking component, and a second wavelength blocking component. The first laser source has a first wavelength working range and the second laser source has a second wavelength working range. The first wavelength working range begins at a first start wavelength and ends at a first end wavelength. The second wavelength working range begins at a second start wavelength, ends at a second end wavelength, and overlaps with the first wavelength working range. The first wavelength blocking component has a first wavelength blocking range including the first end wavelength. The second wavelength blocking component has a second wavelength blocking range including the second start wavelength. The first wavelength blocking component is optically coupled with the first laser source and the second wavelength blocking component is optically coupled with the second laser source.

    摘要翻译： 一种可调扫掠多激光系统，包括第一激光源，第二激光源，第一波长阻挡分量和第二波长阻挡分量。 第一激光源具有第一波长工作范围，第二激光源具有第二波长工作范围。 第一波长工作范围从第一起始波长开始并以第一端波长结束。 第二波长工作范围从第二起始波长开始，以第二端波长结束，并与第一波长工作范围重叠。 第一波长阻挡部件具有包括第一端波长的第一波长阻挡范围。 第二波长阻挡分量具有包括第二起始波长的第二波长阻挡范围。 第一波长阻挡分量与第一激光源光耦合，第二波长阻挡分量与第二激光源光学耦合。

    Optical semiconductor device and optical semiconductor integrated circuit
    3.
    发明授权
    Optical semiconductor device and optical semiconductor integrated circuit 有权
    光半导体器件和光半导体集成电路

    公开(公告)号：US07738520B2

    公开(公告)日：2010-06-15

    申请号：US10527355

    申请日：2004-03-30

    申请人： Nobuhiro Nunoya ,  Yasuo Shibata ,  Naoki Fujiwara ,  Nobuhiro Kikuchi ,  Yuichi Tomori

    发明人： Nobuhiro Nunoya ,  Yasuo Shibata ,  Naoki Fujiwara ,  Nobuhiro Kikuchi ,  Yuichi Tomori

    IPC分类号： H01S3/04

    CPC分类号： G02B6/12007 ,  G02B6/122 ,  G02B6/131 ,  G02B6/136 ,  G02B6/4202 ,  H01S5/026 ,  H01S5/06206 ,  H01S5/06256 ,  H01S5/0654 ,  H01S5/068 ,  H01S5/101 ,  H01S5/1017 ,  H01S5/1025 ,  H01S5/1085 ,  H01S5/1215 ,  H01S5/1221 ,  H01S5/124 ,  H01S5/125 ,  H01S5/2205 ,  H01S5/227 ,  H01S2301/173

    摘要： An optical semiconductor device and optical semiconductor integrated circuit are provided by combining, on a semiconductor substrate, materials having different refractive indices and different temperature dependence of the refractive indices. In particular, it becomes possible to control the temperature dependence of the oscillation wavelength with a propagating region having a material and/or structure whose temperature dependence of the refractive index is different from that of a gain region of the semiconductor laser. In addition, they can be configured to have a plurality of interfaces formed along the waveguide direction of the optical waveguide so that the light reflected off the first interface is weakened by the light reflected from the remaining interfaces. Also, they can be configured with the interfaces inclined to the propagating direction so that the waveguide loss due to the reflection and refraction between the optical waveguides whose refractive indices differ from each other can be reduced.

    摘要翻译： 通过在半导体衬底上组合具有不同折射率和不同的折射率温度依赖性的材料来提供光学半导体器件和光学半导体集成电路。 特别地，可以通过具有折射率的温度依赖性与半导体激光器的增益区域的温度依赖性的材料和/或结构的传播区域来控制振荡波长的温度依赖性。 此外，它们可以被配置为具有沿着光波导的波导方向形成的多个界面，使得从第一界面反射的光被从其余界面反射的光减弱。 此外，它们可以被配置为具有相对于传播方向倾斜的界面，使得可以减少由于折射率彼此不同的光波导之间的反射和折射引起的波导损耗。

    OPTICAL SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF
    4.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF 有权
    光学半导体器件及其驱动方法

    公开(公告)号：US20100061414A1

    公开(公告)日：2010-03-11

    申请号：US12617637

    申请日：2009-11-12

    申请人： Akinori Hayakawa ,  Ken Morito

    发明人： Akinori Hayakawa ,  Ken Morito

    IPC分类号： H01S3/00

    CPC分类号： H01S5/06256 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/06206 ,  H01S5/06258 ,  H01S5/4031 ,  H01S5/50

    摘要： Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 including an electrode 92a for the active layer, an electrode 92b for the refractive index control layer and an electrode 92c for switching, wherein a pre-bias current is previously supplied from the electrode 92a for the active layer to the active layer 54 in a state where a switching current is not supplied from the electrode 92c for switching to the active layer 54, and then while a current Idrive for activation is supplied from the electrode 92a for the active layer to the active layer 54, the laser element 100 is turned on by supplying the switching current Isw from the electrode 92c for switching to a part of the active layer 54, as well as turning off the laser element 100 by halting the supply of the switching current Isw.

    摘要翻译： 目标通过光学半导体器件实现，包括：包括衬底50，衍射光栅52a，有源层54和折射率控制层60的结构61; 以及激光元件100，其包括用于有源层的电极92a，用于折射率控制层的电极92b和用于切换的电极92c，其中预先从用于有源层的电极92a向活性层提供预偏置电流 在没有从用于切换到有源层54的电极92c提供开关电流的状态下，然后当从用于有源层的电极92a向活性层54提供用于激活的电流Idrive时，激光器 通过从用于切换的电极92c向有源层54的一部分提供开关电流Isw来接通元件100，并且通过停止切换电流Isw的供应来关闭激光元件100。

    Tunable semiconductor laser on a semi-insulating substrate
    8.
    发明授权
    Tunable semiconductor laser on a semi-insulating substrate 失效
    可半导体半导体激光器在半绝缘基板上

    公开(公告)号：US5260960A

    公开(公告)日：1993-11-09

    申请号：US872401

    申请日：1992-04-23

    申请人： Markus-Christian Amann ,  Stefan Illek ,  Wolfgang Thulke

    发明人： Markus-Christian Amann ,  Stefan Illek ,  Wolfgang Thulke

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/06 ,  H01S5/062 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/06206 ,  H01S5/227 ,  H01S5/0208 ,  H01S5/2275

    摘要： A tunable laser diode on a semi-insulating substrate having a stripe-shaped layer structure has an intermediate layer between an active layer and a tuning layer that is grown-over by an confinement layer that is doped for the same conductivity type as the intermediate layer. An oppositely doped, lateral region is electrically connected via an identically doped lower region to the active layer. An upper region is likewise oppositely doped and is electrically connected to the tuning layer. A contact layer is essentially planarly applied on the surface of the confinement layer and has respective portions on the appertaining regions on which the contacts provided with adequate bond areas are applied with a further contact layer for the common contact.

    摘要翻译： 具有条形层结构的半绝缘衬底上的可调谐激光二极管在有源层和调谐层之间具有中间层，该中间层由掺杂与中间层相同的导电类型的约束层生长 。 相对掺杂的横向区域经由相同掺杂的下部区域电连接到有源层。 上部区域同样相反地掺杂并且电连接到调谐层。 接触层基本上平面地施加在限制层的表面上，并且在其上具有足够粘合区域的触点上的相应部分被施加有用于共同接触的另外的接触层。