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公开(公告)号:US08222724B2
公开(公告)日:2012-07-17
申请号:US12866322
申请日:2008-02-14
申请人: Daishi Ueno , Taro Wada , Masahiro Funayama , Yoshikatsu Kuroda , Yuichi Kondo , Shinichi Kobayashi , Koji Nakano , Kenj Fujiwara , Teruo Takeshita
发明人: Daishi Ueno , Taro Wada , Masahiro Funayama , Yoshikatsu Kuroda , Yuichi Kondo , Shinichi Kobayashi , Koji Nakano , Kenj Fujiwara , Teruo Takeshita
IPC分类号: H01L23/02
CPC分类号: H01L23/5385 , H01L23/051 , H01L23/3735 , H01L24/19 , H01L25/072 , H01L25/18 , H01L2924/01079 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/351 , H01L2924/00
摘要: An object is to provide a semiconductor element module having high reliability, superior electric connection and thermal connection and capable of securing sufficient cooling performance, and also to provide a method for manufacturing the same. The semiconductor element module (1) comprises an IGBT (2) and a diode (3) having electrodes formed on surfaces of both sides thereof, a ceramic substrate (7), in which thermal conductivity is high, having wiring circuit layers (4, 5) formed on the surface thereof for bonding to surfaces of one side of the IGBT (2) and the diode (3), a ceramic substrate (8), in which thermal conductivity is high, having a wiring circuit layer (6) formed on the surface thereof for bonding to surfaces of other side of the IGBT (2) and the diode (3), and a sealing member (11) which is sandwiched between the outer edges of the ceramic substrates (7, 8) for sealing inside thereof; and these members are bonded by room-temperature bonding.
摘要翻译: 本发明的目的是提供具有高可靠性,优良的电连接和热连接并且能够确保足够的冷却性能的半导体元件模块,并且还提供其制造方法。 半导体元件模块(1)包括IGBT(2)和二极管(3),二极管(3)具有形成在其两侧表面的电极,陶瓷基板(7),其导热率高,具有布线电路层(4, 5),其形成在IGBT(2)和二极管(3)的一侧的表面上,形成导热性高的陶瓷基板(8),具有形成有布线电路层(6)的陶瓷基板 在其表面上连接到IGBT(2)和二极管(3)的另一侧的表面,以及密封构件(11),其夹在陶瓷基板(7,8)的外边缘之间用于密封内部 的; 并且这些构件通过室温粘合而结合。
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公开(公告)号:US20110062600A1
公开(公告)日:2011-03-17
申请号:US12866322
申请日:2008-02-14
申请人: Daishi Ueno , Taro Wada , Masahiro Funayama , Yoshikatsu Kuroda , Yuichi Kondo , Shinichi Kobayashi , Koji Nakano , Kenj Fujiwara , Teruo Takeshita
发明人: Daishi Ueno , Taro Wada , Masahiro Funayama , Yoshikatsu Kuroda , Yuichi Kondo , Shinichi Kobayashi , Koji Nakano , Kenj Fujiwara , Teruo Takeshita
CPC分类号: H01L23/5385 , H01L23/051 , H01L23/3735 , H01L24/19 , H01L25/072 , H01L25/18 , H01L2924/01079 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/351 , H01L2924/00
摘要: An object is to provide a semiconductor element module having high reliability, superior electric connection and thermal connection and capable of securing sufficient cooling performance, and also to provide a method for manufacturing the same. The semiconductor element module (1) comprises an IGBT (2) and a diode (3) having electrodes formed on surfaces of both sides thereof, a ceramic substrate (7), in which thermal conductivity is high, having wiring circuit layers (4, 5) formed on the surface thereof for bonding to surfaces of one side of the IGBT (2) and the diode (3), a ceramic substrate (8), in which thermal conductivity is high, having a wiring circuit layer (6) formed on the surface thereof for bonding to surfaces of other side of the IGBT (2) and the diode (3), and a sealing member (11) which is sandwiched between the outer edges of the ceramic substrates (7, 8) for sealing inside thereof; and these members are bonded by room-temperature bonding.
摘要翻译: 本发明的目的是提供具有高可靠性,优良的电连接和热连接并且能够确保足够的冷却性能的半导体元件模块,并且还提供其制造方法。 半导体元件模块(1)包括IGBT(2)和二极管(3),二极管(3)具有形成在其两侧表面的电极,陶瓷基板(7),其导热率高,具有布线电路层(4, 5),其形成在IGBT(2)和二极管(3)的一侧的表面上,形成导热性高的陶瓷基板(8),具有形成有布线电路层(6)的陶瓷基板 在其表面上连接到IGBT(2)和二极管(3)的另一侧的表面,以及密封构件(11),其夹在陶瓷基板(7,8)的外边缘之间用于密封内部 的; 并且这些构件通过室温粘合而结合。
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