公开(公告)号：US5674652A

公开(公告)日：1997-10-07

申请号：US662676

申请日：1991-02-28

申请人： Kenneth P. Bishop ,  Steven R. J. Brueck ,  Susan M. Gaspar ,  Kirt C. Hickman ,  John R. McNeil ,  S. Sohail H. Naqvi ,  Brian R. Stallard ,  Gary D. Tipton

发明人： Kenneth P. Bishop ,  Steven R. J. Brueck ,  Susan M. Gaspar ,  Kirt C. Hickman ,  John R. McNeil ,  S. Sohail H. Naqvi ,  Brian R. Stallard ,  Gary D. Tipton

IPC分类号： G03F7/20

CPC分类号： G03F7/70558 ,  G03F7/20

摘要： In microelectronics manufacturing, an arrangement for monitoring and control of exposure of an undeveloped photosensitive layer on a structure susceptible to variations in optical properties in order to attain the desired critical dimension for the pattern to be developed in the photosensitive layer. This is done by ascertaining the intensities for one or more respective orders of diffracted power for an incident beam of radiation corresponding to the desired critical dimension for the photosensitive layer as a function of exposure time and optical properties of the structure, illuminating the photosensitive layer with a beam of radiation of one or more frequencies to which the photosensitive layer is not exposure-sensitive, and monitoring the intensities of the orders of diffracted radiation due to said illumination including at least the first order of diffracted radiation thereof, such that when said predetermined intensities for the diffracted orders are reached during said illumination of photosensitive layer, it is known that a pattern having at least approximately the desired critical dimension can be developed on the photosensitive layer.

摘要翻译： 在微电子制造中，用于监测和控制未发展的感光层在易受光学特性变化影响的结构上的曝光的装置，以获得在感光层中显影图案的期望临界尺寸。 这是通过确定对于感光层的期望临界尺寸的入射光束的一个或多个相应衍射功率的衍射强度作为曝光时间和结构的光学性质的函数的强度，通过以下方式照射感光层： 感光层不受曝光敏感的一个或多个频率的辐射光束，以及监测由于所述照射引起的衍射辐射的级数的强度至少包括其衍射辐射的一级，使得当所述预定 在感光层的所述照射期间达到衍射次数的强度，已知在感光层上可以形成具有至少大致所需临界尺寸的图案。

公开(公告)号：US5830611A

公开(公告)日：1998-11-03

申请号：US847618

申请日：1992-03-05

申请人： Kenneth P. Bishop ,  Lisa M. Milner ,  S. Sohail H. Naqvi ,  John R. McNeil ,  Bruce L. Draper

发明人： Kenneth P. Bishop ,  Lisa M. Milner ,  S. Sohail H. Naqvi ,  John R. McNeil ,  Bruce L. Draper

IPC分类号： G03F7/20 ,  G03F7/207

CPC分类号： G03F7/70558 ,  G03F7/70641 ,  G03F7/70675

摘要： The present invention includes a method and apparatus for the rapid, nondestructive evaluation of the contrast of a latent image in a photoresist. More particularly, the contrast of the latent image is directly monitored by measuring the intensity of the light diffracted from a pattern in the exposed, undeveloped photoresist known as the latent image. The proper exposure tool parameters, such as exposure tool time and focus, is suitably determined based on the intensity of different orders of diffracted light, namely the 2nd-order diffracted from the latent image. In a preferred embodiment, a test pattern consisting of a periodic pattern, or a pattern of the device associated with the particular lithographic step, is employed to provide well-defined diffraction orders.

摘要翻译： 本发明包括用于快速，非破坏性评估光致抗蚀剂中的潜像的对比度的方法和装置。 更具体地，潜像的对比度通过测量从曝光的未开发的光致抗蚀剂中被描述为潜像的图案衍射的光的强度来直接监测。 适当的曝光工具参数，例如曝光工具的时间和焦点，可以根据不同的衍射光的强度，即从潜像衍射的二阶度来确定。 在优选实施例中，使用由周期性图案或与特定光刻步骤相关联的器件的图案组成的测试图案来提供明确定义的衍射级。