公开(公告)号：US5674652A

公开(公告)日：1997-10-07

申请号：US662676

申请日：1991-02-28

申请人： Kenneth P. Bishop ,  Steven R. J. Brueck ,  Susan M. Gaspar ,  Kirt C. Hickman ,  John R. McNeil ,  S. Sohail H. Naqvi ,  Brian R. Stallard ,  Gary D. Tipton

发明人： Kenneth P. Bishop ,  Steven R. J. Brueck ,  Susan M. Gaspar ,  Kirt C. Hickman ,  John R. McNeil ,  S. Sohail H. Naqvi ,  Brian R. Stallard ,  Gary D. Tipton

IPC分类号： G03F7/20

CPC分类号： G03F7/70558 ,  G03F7/20

摘要： In microelectronics manufacturing, an arrangement for monitoring and control of exposure of an undeveloped photosensitive layer on a structure susceptible to variations in optical properties in order to attain the desired critical dimension for the pattern to be developed in the photosensitive layer. This is done by ascertaining the intensities for one or more respective orders of diffracted power for an incident beam of radiation corresponding to the desired critical dimension for the photosensitive layer as a function of exposure time and optical properties of the structure, illuminating the photosensitive layer with a beam of radiation of one or more frequencies to which the photosensitive layer is not exposure-sensitive, and monitoring the intensities of the orders of diffracted radiation due to said illumination including at least the first order of diffracted radiation thereof, such that when said predetermined intensities for the diffracted orders are reached during said illumination of photosensitive layer, it is known that a pattern having at least approximately the desired critical dimension can be developed on the photosensitive layer.

摘要翻译： 在微电子制造中，用于监测和控制未发展的感光层在易受光学特性变化影响的结构上的曝光的装置，以获得在感光层中显影图案的期望临界尺寸。 这是通过确定对于感光层的期望临界尺寸的入射光束的一个或多个相应衍射功率的衍射强度作为曝光时间和结构的光学性质的函数的强度，通过以下方式照射感光层： 感光层不受曝光敏感的一个或多个频率的辐射光束，以及监测由于所述照射引起的衍射辐射的级数的强度至少包括其衍射辐射的一级，使得当所述预定 在感光层的所述照射期间达到衍射次数的强度，已知在感光层上可以形成具有至少大致所需临界尺寸的图案。

公开(公告)号：US5164790A

公开(公告)日：1992-11-17

申请号：US661754

申请日：1991-02-27

申请人： John R. McNeil ,  Kirt C. Hickman ,  Susan M. Gaspar ,  S. Sohail H. Naqvi

发明人： John R. McNeil ,  Kirt C. Hickman ,  Susan M. Gaspar ,  S. Sohail H. Naqvi

IPC分类号： G01B11/02

CPC分类号： G01B11/02

摘要： For critical dimension (CD) metrology of photomasks, a laser scatterometer linewidth measurement tool provides noncontact rapid, and nondestructive measurement of linewidth. Calculation of the linewidth is based on a rigorous theoretical model, thus eliminating the need for calibrations. A chrome-on-glass diffraction grating is illuminated with a laser. A photodetector mounted behind the photomask measures the scattered power in each diffracted order. This provides data for the rigorous theoretical model which provides a relationship between the linewidth of the photomask grating and the fraction of total power diffracted into the transmitted zero-order. This scatterometer linewidth measurement technique provides a simple, rapid, nondestructive, and noncontact method of linewidth determination which takes into account the effect of the glass substrate on which the grating is placed. This technique is insensitive to variations in angle of incidence, spot size, position of the spot on the grating, polarization and wavelength.

摘要翻译： 对于光掩模的关键尺寸（CD）计量，激光散射仪线宽测量工具提供线性的非接触式快速和非破坏性测量。 线宽的计算基于严格的理论模型，因此不需要校准。 镀铬玻璃衍射光栅用激光照射。 安装在光掩模后面的光电检测器以每个衍射顺序测量散射光焦度。 这提供了严格的理论模型的数据，其提供了光掩模光栅的线宽与衍射成发射零级的总功率的分数之间的关系。 这种散射仪线宽测量技术提供了线宽确定的简单，快速，非破坏性和非接触的方法，其考虑了放置光栅的玻璃基板的影响。 这种技术对入射角，光斑尺寸，光栅在光栅上的位置，极化和波长的变化不敏感。