-
1.
公开(公告)号:US4814296A
公开(公告)日:1989-03-21
申请号:US90827
申请日:1987-08-28
IPC分类号: B28D5/00 , B27G19/10 , F28D5/00 , H01L21/301 , H01L21/304 , H01L21/306 , H01L27/148
CPC分类号: B27G19/10 , H01L21/3043 , Y10S148/028
摘要: A process for forming individual dies having faces that allow the dies to be assembled against other like dies to form one and/or two dimensional scanning arrays wherein the active side of a wafer is etched to form small V-shaped grooves defining the die faces, relatively wide grooves are cut in the inactive side of the wafer opposite each V-shaped groove, and the wafer cut by sawing along the V-shaped grooves, the saw being located so that the side of the saw blade facing the die is aligned with the bottom of the V-shaped groove so that there is retained intact one side of the V-shaped groove to intercept and prevent cracks and chipping caused by sawing from damaging the die active surface and any circuits thereon.