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1.发明授权公开(公告)号：US08864934B2
公开(公告)日：2014-10-21
申请号：US13434284
申请日：2012-03-29
申请人： Tatsuya Ogi , Wataru Ozawa , Kimihiro Fukasawa , Kazuhiro Kanaya
发明人： Tatsuya Ogi , Wataru Ozawa , Kimihiro Fukasawa , Kazuhiro Kanaya
IPC分类号： C23F1/00
CPC分类号： H01J37/32926 , H01J37/32532 , H01J37/32779 , H01J37/32899 , H01J37/3299
摘要： Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.
摘要翻译： 提供一种平行平板型等离子体处理装置，其包括存储用于执行等离子体处理的处理配方的配方存储单元，设置等离子体处理的累积时间的补偿设定单元或启动后的处理基板的数量，使用新的 第二电极和输入屏幕中第二电极的设定温度的补偿值，以及存储补偿的设定值的存储单元。 等离子体处理装置还配备有用于通过将在处理配方中写入的上部电极的设定温度与存储在存储单元中的补偿值相加而基于补偿后的设定温度来控制温度调节机构的程序。 结果，抑制了由处理气氛的变化引起的基板之间的等离子体处理的不均匀性。
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2.发明申请公开(公告)号：US20120248067A1
公开(公告)日：2012-10-04
申请号：US13434284
申请日：2012-03-29
申请人： Tatsuya Ogi , Wataru Ozawa , Kimihiro Fukasawa , Kazuhiro Kanaya
发明人： Tatsuya Ogi , Wataru Ozawa , Kimihiro Fukasawa , Kazuhiro Kanaya
CPC分类号： H01J37/32926 , H01J37/32532 , H01J37/32779 , H01J37/32899 , H01J37/3299
摘要： Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.
摘要翻译： 提供一种平行平板型等离子体处理装置，其包括存储用于执行等离子体处理的处理配方的配方存储单元，设置等离子体处理的累积时间的补偿设定单元或启动后的处理基板的数量，使用新的 第二电极和输入屏幕中第二电极的设定温度的补偿值，以及存储补偿的设定值的存储单元。 等离子体处理装置还配备有用于通过将在处理配方中写入的上部电极的设定温度与存储在存储单元中的补偿值相加而基于补偿后的设定温度来控制温度调节机构的程序。 结果，抑制了由处理气氛的变化引起的基板之间的等离子体处理的不均匀性。
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公开(公告)号：US07409253B2
公开(公告)日：2008-08-05
申请号：US10825323
申请日：2004-04-16
申请人： Noriaki Shimizu , Kimihiro Fukasawa , Kazuhiro Kanaya , Jun Shoji
发明人： Noriaki Shimizu , Kimihiro Fukasawa , Kazuhiro Kanaya , Jun Shoji
CPC分类号： G05B19/0426 , G05B2219/32096 , G05B2219/45031
摘要： A substrate processing system allows to reduce the number of works that should be done by a software engineer. The system 100 includes a substrate processing apparatus 101; a substrate processing controller 102 for controlling the substrate processing apparatus 101; and a server 103 for storing therein commands, i.e., instructional statements, for defining an operation of each device. The substrate processing controller 102 has a RAM 105 serving as a work space for creating a macro file corresponding to each of processes divided from the whole substrate processing or for changing the content of a macro file; and an executor 108 composed of, e.g., CPU for executing a process sequence macro obtained by a combination of the created macro files. The user creates a macro file describing a sequential operation of each process or changes the content of a macro file by arranging the stored commands.
摘要翻译： 基板处理系统允许减少软件工程师应该做的工作数量。 系统100包括基板处理装置101; 用于控制基板处理装置101的基板处理控制器102; 以及用于存储用于定义每个设备的操作的命令（即，指令语句）的服务器103。 基板处理控制器102具有作为用于创建对应于从整个基板处理划分的每个处理或用于改变宏文件的内容的宏文件的工作空间的RAM 105; 以及由例如CPU构成的执行器108，用于执行通过所创建的宏文件的组合而获得的处理序列宏。 用户创建描述每个进程的顺序操作的宏文件，或者通过排列所存储的命令来改变宏文件的内容。
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公开(公告)号：US09236230B2
公开(公告)日：2016-01-12
申请号：US13483843
申请日：2012-05-30
IPC分类号： H01J37/32 , C23C16/455 , C23C16/52
CPC分类号： H01J37/32449 , C23C16/45523 , C23C16/45525 , C23C16/52 , H01J37/3244 , Y10T137/0368
摘要： It is possible to prevent processing gases from being mixed when alternately supplying the processing gases while alternately switching the processing gases and to suppressed a transient phenomenon more efficiently as compared to conventional cases. When supplying at least two kinds of processing gases (e.g., a C4F6 gas and a C4F8 gas) into a processing chamber while alternately switching the at least two kinds of processing gases during a plasma process on a wafer, the supply of each processing gas can be alternately turned on and off by alternately setting an instruction flow rate of a mass flow controller to be a predetermined flow rate and a zero flow rate while a downstream opening/closing valve provided at a downstream side of the mass flow controller is open.
摘要翻译： 与常规情况相比，可以在交替地切换处理气体的同时交替地供给处理气体并且与现有技术相比更有效地抑制瞬态现象，可以防止加工气体混合。 当在晶片上等离子体处理期间交替地切换至少两种处理气体时，将至少两种处理气体（例如，C 4 F 6气体和C 4 F 8气体）供应到处理室中，每个处理气体的供应可以 通过在设置在质量流量控制器的下游侧的下游打开/关闭阀打开的同时将质量流量控制器的指令流量交替地设定为预定流量和零流量来交替地接通和关闭。
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公开(公告)号：US20060149403A1
公开(公告)日：2006-07-06
申请号：US10825323
申请日：2004-04-16
申请人： Noriaki Shimizu , Kimihiro Fukasawa , Kazuhiro Kanaya , Jun Shoji
发明人： Noriaki Shimizu , Kimihiro Fukasawa , Kazuhiro Kanaya , Jun Shoji
IPC分类号： G06F19/00
CPC分类号： G05B19/0426 , G05B2219/32096 , G05B2219/45031
摘要： [Purpose] The present invention provides a system and method for processing a substrate while reducing the number of works that should be done by a software engineer; and a program for performing the method. [Constitution] A substrate processing system 100 includes a substrate processing apparatus 101; a substrate processing controller 102 for controlling the substrate processing apparatus 101; and a server 103 for storing therein commands, i.e., instructional statements, for defining an operation of each device. The substrate processing controller 102 has a RAM 105 serving as a work space for creating a macro file corresponding to each of processes divided from the whole substrate processing or for changing the content of a macro file; and an executor 108 composed of, e.g., CPU for executing a process sequence macro obtained by a combination of the created macro files. The user creates a macro file describing a sequential operation of each process or changes the content of a macro file by arranging the stored commands.
摘要翻译： [目的]本发明提供了一种用于处理基板的系统和方法，同时减少了软件工程师应该完成的工作数量; 以及用于执行该方法的程序。 [结构]基板处理系统100包括基板处理装置101; 用于控制基板处理装置101的基板处理控制器102; 以及用于存储用于定义每个设备的操作的命令（即，指令语句）的服务器103。 基板处理控制器102具有作为用于创建对应于从整个基板处理划分的每个处理或用于改变宏文件的内容的宏文件的工作空间的RAM 105; 以及由例如CPU构成的执行器108，用于执行通过所创建的宏文件的组合而获得的处理序列宏。 用户创建描述每个进程的顺序操作的宏文件，或者通过排列所存储的命令来改变宏文件的内容。
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公开(公告)号：US20120305188A1
公开(公告)日：2012-12-06
申请号：US13483843
申请日：2012-05-30
CPC分类号： H01J37/32449 , C23C16/45523 , C23C16/45525 , C23C16/52 , H01J37/3244 , Y10T137/0368
摘要： It is possible to prevent processing gases from being mixed when alternately supplying the processing gases while alternately switching the processing gases and to suppressed a transient phenomenon more efficiently as compared to conventional cases. When supplying at least two kinds of processing gases (e.g., a C4F6 gas and a C4F8 gas) into a processing chamber while alternately switching the at least two kinds of processing gases during a plasma process on a wafer, the supply of each processing gas can be alternately turned on and off by alternately setting an instruction flow rate of a mass flow controller to be a predetermined flow rate and a zero flow rate while a downstream opening/closing valve provided at a downstream side of the mass flow controller is open.
摘要翻译： 与常规情况相比，可以在交替地切换处理气体的同时交替地供给处理气体并且与现有技术相比更有效地抑制瞬态现象，可以防止加工气体混合。 当在晶片上等离子体处理期间交替地切换至少两种处理气体时，将至少两种处理气体（例如，C 4 F 6气体和C 4 F 8气体）供应到处理室中，每个处理气体的供应可以 通过在设置在质量流量控制器的下游侧的下游打开/关闭阀打开的同时将质量流量控制器的指令流量交替地设定为预定流量和零流量来交替地接通和关闭。
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