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公开(公告)号：US06936335B2
公开(公告)日：2005-08-30
申请号：US10450708
申请日：2001-12-21
申请人： Kenneth Burrows , Klaus C. Wiemer
发明人： Kenneth Burrows , Klaus C. Wiemer
CPC分类号： G06K9/0004 , Y10T428/24132 , Y10T428/24802 , Y10T428/24884
摘要： An addressable receptor in laminate form, and advantageously in PTF laminate form, comprising a front conductive layer including a plurality of substantially parallel front electrode strips and a rear conductive layer also including a plurality of substantially parallel rear electrode strips. The conductive layers are orientated with respect to each other so that an array of electrode regions of intersection is formed corresponding to the regions at which the front electrode strips cross over the rear electrode strips. The first and second conductive layers are separated by a reactive layer comprising a plurality of defined reactive regions. The reactive regions are deployed in a reactive array substantially in register with the array of electrode regions of intersection, so that the reactive regions are electrically addressable by coordinate pairs of first and second electrode strips. The front electrode strips are partially transparent to radiation in a selected waveband. In operation, an irradiated image in the selected waveband is directed onto the receptor laminate. The irradiated pattern passes through the transparent front electrode strips and selectively energizes the addressable reactive regions in a corresponding pattern.
摘要翻译： 层叠形式的可寻址接收器，并且有利地为PTF层压形式，其包括前导电层，前导电层包括多个基本上平行的前电极条和还包括多个基本平行的后电极条的后导电层。 导电层相对于彼此取向，使得与前电极条在后电极条上交叉的区域形成电极交叉区阵列。 第一和第二导电层被包括多个限定的反应区的反应层隔开。 反应性区域部署在基本上与电极交叉区域阵列对准的反应阵列中，使得反应区域可以通过第一和第二电极条的坐标对来电地寻址。 前电极条对于所选波段中的辐射是部分透明的。 在操作中，所选波段中的照射图像被引导到受体层叠体上。 照射图案通过透明前电极条，并以对应图案选择性地激励可寻址反应区域。
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公开(公告)号：US4246786A
公开(公告)日：1981-01-27
申请号：US048122
申请日：1979-06-13
申请人： Klaus C. Wiemer , Joseph D. Lejeune
发明人： Klaus C. Wiemer , Joseph D. Lejeune
CPC分类号： G01K1/18 , G01K7/223 , Y10T29/49085
摘要： A fast response temperature sensing device particularly adapted for use in a rarefied fluid media comprises a body of semiconducting material having a precisely predetermined positive temperature coefficient of resistivity in a selected temperature range. The body has ohmic contact element secured thereto to form a small spreading resistance type of resistor element having precisely predetermined resistance characteristics. Leads are electrically connected to the element for connecting the element in an electrical circuit. The element is encapsulated for shielding the element from the environment in a temperature zone to be monitored; and a vane having greater thermal conductivity than the encapsulating material and having greater heat capacity than the resistor element are secured in heat-transfer relation to the element to extend outside the encapsulating material for rapidly conducting heat to the resistor element from the temperature zone. The temperature sensing device is made by providing a lead frame having leads and a vane, by mounting the resistor element in heat-transfer relation to the vane and in electrically connected relation to the leads, and encapsulating the element and portions of the leads and vane so that the leads extend outside the encapsulating material to be connected in a circuit and the vane extends outside the encapsulating material to receive and conduct heat to the resistor element.
摘要翻译： 特别适用于稀薄流体介质的快速响应温度感测装置包括在所选温度范围内具有精确预定的正电温度系数的半导体材料体。 本体具有固定到其上的欧姆接触元件，以形成具有精确预定电阻特性的小扩散电阻型电阻元件。 引线电连接到用于连接电路中的元件的元件。 该元件被封装用于在待监测的温度区域中将元件与环境隔离; 并且具有比封装材料更大的热导率并且具有比电阻元件更大的热容量的叶片以与该元件的热传递关系的方式固定，以延伸到封装材料外部，以从温度区快速传导到电阻元件。 温度检测装置通过提供具有引线和叶片的引线框架来制造，通过将电阻元件以热传导关系安装到叶片并且与导线电连接，并且封装元件和引线和叶片的部分 使得引线延伸到要在电路中连接的封装材料外部，并且叶片延伸到封装材料外部以接收并传导到电阻元件的热量。
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公开(公告)号：US4015175A
公开(公告)日：1977-03-29
申请号：US582951
申请日：1975-06-02
CPC分类号： H01G4/08
摘要： An axial-lead fixed-value capacitor comprising a metal-nitride-oxide-silicon chip in a standard diode package has been fabricated, having capacitance values in the 10 to 1000 pico-farad range. The device features a beveled-edge configuration which contributes to a low leakage current and also facilitates the sealing of the semiconductor chip in a double plug axial-lead package. The double layer dielectric medium comprises a thermally grown silicon oxide film typically 450 angstroms thick, for example, and a plasma deposited layer of silicon nitride typically 350 angstroms thick, for example.
摘要翻译： 已经制造了包括标准二极管封装中的金属氮化物 - 氧化物 - 硅芯片的轴向引线固定值电容器，其电容值在10至1000皮拉范围内。 该器件具有倾斜边缘配置，其有助于低泄漏电流，并且还有助于将半导体芯片密封在双插头轴向引线封装中。 例如，双层介电介质包括通常为450埃厚的热生长氧化硅膜，例如通常为350埃厚的氮化硅等离子体沉积层。
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公开(公告)号：US5058491A
公开(公告)日：1991-10-22
申请号：US572880
申请日：1990-08-27
IPC分类号： F24F3/16 , H01L21/00 , H01L21/677
CPC分类号： F24F3/161 , H01L21/67017 , H01L21/67727
摘要： A building for the manufacture of integrated circuits which includes a manufacturing equipment floor with processing equipment for the manufacture of integrated circuits, a floor under the manufacturing floor has supporting equipment associated with each of the processing equipment, and an upper floor above the manufacturing floow supports a plenum system that provides at least two classes of clean air circulation to the manufacturing floor. Each piece of processing equipment is enclosed with means to separate it from the surrounding air. A clean air input of the highest class of clean air purity is provided to the processing equipment in the enclosure. The air/gas exhaust is directed through an air/gas handling system. Means are also provided to provide the surrounding areas a clean air input of a lower class of clean air purity from the plenum system and the air/gas exhaust directed to an air/gas handling system. Interchangeable means are provided that are associated with the plenum system which quickly allow the change of air purity to another class of clean air purity whereby the processing equipment can be removed, replaced with another processing equipment or a new piece of processing equipment inserted without undue down time of the manufacturing of the integrated circuits.
摘要翻译： 一种用于制造集成电路的建筑物，其包括具有用于制造集成电路的处理设备的制造设备地板，在制造地板下方的地板具有与每个处理设备相关联的支撑设备，并且在制造基座支撑件上方的上层 一个至少提供两类清洁空气循环的制冷系统。 每个加工设备都用与周围空气分离的方式封闭。 清洁空气纯净的空气输入提供给外壳中的处理设备。 空气/废气排放通过空气/气体处理系统。 还提供了用于向周围区域提供来自气室系统的较低级别的洁净空气纯度的清洁空气输入以及被引导到空气/气体处理系统的空气/气体排气。 提供了与增压系统相关联的可互换装置，其快速地允许将空气纯度改变为另一类洁净空气纯度，从而可以将处理设备移除，替换为另外的加工设备或插入的新的加工设备，而不会不适当地下降 集成电路制造的时间。
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公开(公告)号：US4104697A
公开(公告)日：1978-08-01
申请号：US759518
申请日：1977-01-14
CPC分类号： H01G4/08
摘要： An axial-lead fixed-value capacitor comprising a metal-nitride-oxide-silicon chip in a standard diode package has been fabricated, having capacitance values in the 10 to 1000 pico-farad range. The device features a beveled-edge configuration which contributes to a low leakage current and also facilitates the sealing of the semiconductor chip in a double plug axial-lead package. The double layer dielectric medium comprises a thermally grown silicon oxide film typically 450 angstroms thick, for example, and a plasma deposited layer of silicon nitride typically 350 angstroms thick, for example.
摘要翻译： 已经制造了包括标准二极管封装中的金属氮化物 - 氧化物 - 硅芯片的轴向引线固定值电容器，其电容值在10至1000皮拉范围内。 该器件具有倾斜边缘配置，其有助于低泄漏电流，并且还有助于将半导体芯片密封在双插头轴向引线封装中。 例如，双层介电介质包括通常为450埃厚的热生长氧化硅膜，例如通常为350埃厚的氮化硅等离子体沉积层。
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