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    LAMINATE CAPACITOR AND SEMICONDUCTOR DEVICE
    2.
    发明公开
    LAMINATE CAPACITOR AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240006123A1

    公开(公告)日：2024-01-04

    申请号：US18253163

    申请日：2021-11-15

    Applicant: ROHM CO., LTD.

    Inventor： Yuta OKAWAUCHI ,  Yasuo KANETAKE

    IPC: H01G4/30 ,  H01G4/232 ,  H02M7/48 ,  H01G4/08 ,  H01G4/005

    CPC classification number: H01G4/30 ,  H01G4/232 ,  H01G4/005 ,  H01G4/08 ,  H02M7/48

    Abstract: A multilayer capacitor includes a stacked body, a first external electrode, and a second external electrode. The stacked body includes a plurality of laminate sections and a plurality of insulating layers arranged alternately in z direction. Each laminate section includes a first conductor, a second conductor, a third conductor, and a dielectric member. The first conductor connects to the first external electrode, and the second conductor connects to the second external electrode. The third conductor includes a first part and a second part. The dielectric member has a first surface and a second surface spaced apart from each other in the z direction. The first surface is in contact with at least the first conductor, and the second surface is in contact with at least the first part. The laminate sections include two adjacent laminate sections in the z direction, and the first surfaces or the second surfaces of these two laminate sections face each other in the z direction.

    FERROELECTRIC MEMORY, DATA READING/WRITING METHOD AND MANUFACTURING METHOD THEREOF AND CAPACITOR STRUCTURE
    3.
    发明申请
    FERROELECTRIC MEMORY, DATA READING/WRITING METHOD AND MANUFACTURING METHOD THEREOF AND CAPACITOR STRUCTURE 审中-公开

    公开(公告)号：US20180366174A1

    公开(公告)日：2018-12-20

    申请号：US15942599

    申请日：2018-04-02

    Applicant: NuStorage Technology Co., Ltd.

    Inventor： FU-CHOU LIU

    IPC: G11C11/22 ,  H01L27/108 ,  H01G4/01 ,  H01G4/08

    CPC classification number: G11C11/221 ,  G11C11/2257 ,  G11C11/2273 ,  G11C11/2275 ,  H01G4/01 ,  H01G4/08 ,  H01L27/10852

    Abstract: A selected ferroelectric memory cell of a ferroelectric memory is electrically connected to a first bit line, a second bit line, a first word line, a second word line and a plate line. The selected ferroelectric memory cell includes a first field effect transistor (“FET”), a second FET and a ferroelectric capacitor. A control terminal and a first access terminal of the first FET are electrically connected to the first word line and the first bit line, respectively. A control terminal and a first access terminal of the second FET are electrically connected to the second word line and the second bit line, respectively. A second access terminal of the first FET is electrically connected to a first capacitor electrode of the ferroelectric capacitor and a second terminal of the second FET. A second capacitor electrode of the ferroelectric capacitor is electrically connected to the plate line.

    RESONANCE CIRCUIT WITH A SINGLE CRYSTAL CAPACITOR DIELECTRIC MATERIAL
    6.
    发明申请
    RESONANCE CIRCUIT WITH A SINGLE CRYSTAL CAPACITOR DIELECTRIC MATERIAL 审中-公开

    公开(公告)号：US20170263849A1

    公开(公告)日：2017-09-14

    申请号：US15607210

    申请日：2017-05-26

    Applicant: Akoustis, Inc.

    Inventor： Jeffrey B. SHEALY

    IPC: H01L41/314 ,  H03H9/17 ,  H03H9/02

    CPC classification number: H01L41/314 ,  H01G4/08 ,  H03H9/02574 ,  H03H9/174 ,  H03H9/175 ,  Y10T29/43

    Abstract: A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 1012 defects/ cm2. A second electrode material is overlying the single crystal capacitor dielectric material.

    MULTILAYER CERAMIC ELECTRONIC COMPONENT
    8.
    发明申请
    MULTILAYER CERAMIC ELECTRONIC COMPONENT 审中-公开
    多层陶瓷电子元件

    公开(公告)号：US20170011850A1

    公开(公告)日：2017-01-12

    申请号：US15071821

    申请日：2016-03-16

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Hong Seok KIM ,  Chung Eun LEE ,  Doo Young KIM ,  Ki Han KIM ,  Ji Ye CHOI ,  Kyung Ryul LEE ,  Jae Yeol CHOI ,  Soo Kyong JO

    IPC: H01G4/08 ,  H01G4/248 ,  H01G4/012 ,  H01G4/30

    CPC classification number: H01G4/08 ,  H01G4/0085 ,  H01G4/012 ,  H01G4/1227 ,  H01G4/248 ,  H01G4/30

    Abstract: A multilayer ceramic electronic component includes a ceramic body in which dielectric layers and internal electrodes are alternately disposed. Ceramic-metal compound layers are disposed on interfaces between the internal electrodes and the dielectric layers. Additionally, in some examples, spaces between adjacent internal electrodes are fully occupied by the dielectric layers and the dielectric layers contain a ceramic-metal compound containing metal particle. The ceramic-metal compound layer may have an embossing type configuration or a dendrite type configuration.

    Abstract translation: 多层陶瓷电子部件包括交替配置电介质层和内部电极的陶瓷体。 陶瓷 - 金属化合物层设置在内部电极和电介质层之间的界面上。 此外，在一些示例中，相邻内部电极之间的空间被电介质层完全占据，并且电介质层含有含有金属颗粒的陶瓷 - 金属化合物。 陶瓷 - 金属化合物层可以具有压花型构型或枝晶型构型。

    High permittivity low leakage capacitor and energy storing device
    9.
    发明授权
    High permittivity low leakage capacitor and energy storing device 有权
    高介电常数低漏电容器和储能装置

    公开(公告)号：US09531198B2

    公开(公告)日：2016-12-27

    申请号：US13853625

    申请日：2013-03-29

    Applicant: Carver Scientific, Inc.

    Inventor： David Reginald Carver

    IPC: H02J7/00 ,  H01G4/04 ,  H01G4/38 ,  H02J7/34 ,  H01G4/08

    CPC classification number: H02J7/00 ,  H01G4/04 ,  H01G4/08 ,  H01G4/38 ,  H02J7/345

    Abstract: A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein the use of organic polymers, shellac, silicone oil, and/or zein formulations are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices.

    Abstract translation: 提供了用于制造用于电容器的高介电常数介电材料的方法。 公开了具有增强性能的有机非导电介质中的几种高介电常数材料及其制备方法。 公开了形成一些特定电介质材料的薄膜的一般方法，其中使用有机聚合物，虫胶，硅油和/或玉米醇溶蛋白制剂来制备低电导率的电介质涂层。 此外，使用温和的还原剂在低温下证明形成某些过渡金属盐作为盐或氧化物基质的方法。 此外，提供了用于从长期存储电容器恢复和再生泄漏电流的电路结构和相关联的操作方法，以便提高这些装置的制造产量和效用。

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