公开(公告)号：US5394014A

公开(公告)日：1995-02-28

申请号：US149893

申请日：1993-11-10

申请人： Masahiko Ishikawa ,  Kohji Hayano ,  Shinichi Mori ,  Masayuki Yamashita ,  Osamu Ueda ,  Namiki Moriga

发明人： Masahiko Ishikawa ,  Kohji Hayano ,  Shinichi Mori ,  Masayuki Yamashita ,  Osamu Ueda ,  Namiki Moriga

IPC分类号： H01L23/06 ,  H01L23/29 ,  H01L23/31 ,  H01L23/552 ,  H01L23/28

CPC分类号： H01L23/552 ,  H01L2224/48247 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3025

摘要： In accordance with one aspect of the present invention, provided is a semiconductor device comprising a semiconductor chip which is directly covered with a resin material having a light shielding property as well as a film which is provided on the resin material for shielding the semiconductor device against light. The film may be formed by a seal having a surface which is covered with a metal and a rear surface which is colored black, a layer of a metal or ceramics which is deposited in a vapor phase, or a coating of an insulating material whose refractive index is different from that of the resin material. In another aspect of the present invention, provided is a semiconductor device which is directly covered with a resin material mixed with a light absorbing material. In still another aspect of the present invention, provided is a semiconductor device comprising a semiconductor chip, having a surface covered with black polyimide, which is further covered with a resin material having a light shielding property. In a further aspect of the present invention, provided is a package for covering a semiconductor device which is mounted on a wiring board. According to such improvement, a light shielding property is improved particularly in relation to a thin semiconductor device whose thickness is only about 1 mm, and the semiconductor device is prevented from a malfunction caused by light.

摘要翻译： 根据本发明的一个方面，提供一种半导体器件，其包括直接由具有遮光性的树脂材料覆盖的半导体芯片以及设置在用于屏蔽半导体器件的树脂材料上的膜 光。 膜可以由具有被金属覆盖的表面和着色为黑色的后表面，以蒸气相沉积的金属或陶瓷层的密封件或者折射率为绝缘材料的绝缘材料的涂层形成， 指数与树脂材料的指数不同。 在本发明的另一方面，提供一种直接用与吸光材料混合的树脂材料覆盖的半导体器件。 在本发明的另一方面，提供一种半导体器件，其包括具有被黑色聚酰亚胺覆盖的表面的半导体芯片，该半导体器件进一步被具有遮光性的树脂材料覆盖。 在本发明的另一方面，提供一种用于覆盖安装在布线板上的半导体器件的封装。 根据这样的改进，特别是相对于厚度仅为1mm的薄型半导体器件而言，防光性能得到改善，并且防止了由于光引起的故障的半导体器件。

公开(公告)号：US5305280A

公开(公告)日：1994-04-19

申请号：US862499

申请日：1992-04-02

申请人： Kohji Hayano

发明人： Kohji Hayano

IPC分类号： G06F12/06 ,  G06F12/08 ,  G11C7/10 ,  G11C8/12 ,  G11C11/00 ,  G11C11/401 ,  G11C11/413 ,  G11C8/00

CPC分类号： G11C8/12 ,  G06F12/0893 ,  G11C11/005 ,  G11C7/1051

摘要： In a cache DRAM including a DRAM memory array and a SRAM memory array provided on the same chip, a plurality of pairs of MOS transistors are provided, as block transfer gates, so as to connect bit line pairs in the DRAM memory array and bit line pairs in the SRAM memory array one pair by one pair, and a data transfer amount controlling circuit for controlling the plurality of pairs of MOS transistors, a block including a predetermined number of pairs at a time, is newly provided. Data transfer amount controlling circuit is constructed to simultaneously turn on only pairs of MOS transistors included in blocks of a number in accordance with a predetermined external signal out of the plurality of pairs of MOS transistors. Therefore, the amount of data transferred at a time between the DRAM memory array and the SRAM memory array can be changed by changing the combination of the logical levels of external signals.

摘要翻译： 在包括设置在同一芯片上的DRAM存储器阵列和SRAM存储器阵列的高速缓存DRAM中，提供多对MOS晶体管作为块传输门，以便连接DRAM存储器阵列中的位线对和位线 一对一对地存储在SRAM存储器阵列中，并且重新提供用于控制多对MOS晶体管的数据传输量控制电路，每次包括预定数量的对的块。 数据传送量控制电路被构造成仅在多对MOS晶体管中根据预定的外部信号同时打开包括在数字块中的MOS晶体管对。 因此，可以通过改变外部信号的逻辑电平的组合来改变在DRAM存储器阵列和SRAM存储器阵列之间一次传输的数据量。

公开(公告)号：US5317195A

公开(公告)日：1994-05-31

申请号：US792872

申请日：1991-11-19

申请人： Masahiko Ishikawa ,  Kohji Hayano ,  Shinichi Mori ,  Masayuki Yamashita ,  Osamu Ueda ,  Namiki Moriga

发明人： Masahiko Ishikawa ,  Kohji Hayano ,  Shinichi Mori ,  Masayuki Yamashita ,  Osamu Ueda ,  Namiki Moriga

IPC分类号： H01L23/06 ,  H01L23/29 ,  H01L23/31 ,  H01L23/552 ,  H01L23/28

CPC分类号： H01L23/552 ,  H01L2224/48247 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3025

摘要： Provided is a semiconductor device comprising a semiconductor chip which is directly covered with a resin material having a light shielding property as well as a film which is provided on the resin material for shielding the semiconductor device against light. The film may be formed by a seal having a surface which is covered with a metal and a rear surface which is colored black, a layer of a metal or ceramics which is deposited in a vapor phase, or a coating of an insulating material whose refractive index is different from that of the resin material. In another aspect of the present invention, provided is a semiconductor device which is directly covered with a resin material mixed with a light absorbing material. In still another aspect of the present invention, provided is a semiconductor device comprising a semiconductor chip, having a surface covered with black polyimide, which is further covered with a resin material having a light shielding property. In a further aspect of the present invention, provided is a package for covering a semiconductor device which is mounted on a wiring board. According to such improvement, a light shielding property is improved particularly in relation to a thin semiconductor device whose thickness is only about 1 mm, and the semiconductor device is prevented from a malfunction caused by light.

摘要翻译： 提供了一种半导体器件，其包括直接由具有遮光性的树脂材料覆盖的半导体芯片以及设置在用于屏蔽半导体器件的光的树脂材料上的膜。 膜可以由具有被金属覆盖的表面和着色为黑色的后表面，以蒸气相沉积的金属或陶瓷层的密封件或者折射率为绝缘材料的绝缘材料的涂层形成， 指数与树脂材料的指数不同。 在本发明的另一方面，提供一种直接用与吸光材料混合的树脂材料覆盖的半导体器件。 在本发明的另一方面，提供一种半导体器件，其包括具有被黑色聚酰亚胺覆盖的表面的半导体芯片，该半导体器件进一步被具有遮光性的树脂材料覆盖。 在本发明的另一方面，提供一种用于覆盖安装在布线板上的半导体器件的封装。 根据这样的改进，特别是相对于厚度仅为1mm的薄型半导体器件而言，防光性能得到改善，并且防止了由于光引起的故障的半导体器件。