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公开(公告)号：US20110163306A1
公开(公告)日：2011-07-07
申请号：US13063061
申请日：2008-09-10
IPC分类号： H01L31/0272
CPC分类号： G01T1/244 , H01L27/14618 , H01L27/14676 , H01L2924/0002 , H01L2924/00
摘要： A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.
摘要翻译： 本发明的放射线检测器具有可固化的合成树脂膜，其覆盖辐射敏感半导体层，载体选择性高电阻膜和公共电极的暴露表面，其中不含氯化物的材料混合使用在制造过程中 可固化合成树脂膜。 这样可以防止载流子选择性高电阻膜和半导体层中的氯离子形成针孔和空隙。 也可以在公共电极的露出表面和可固化合成树脂膜之间设置不透过离子性材料的保护膜，由此防止载体选择性高电阻膜被包含在可固化合成树脂膜中的氯离子腐蚀 ，并且防止流过半导体层的暗电流增加。
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公开(公告)号：US07233003B2
公开(公告)日：2007-06-19
申请号：US10942846
申请日：2004-09-17
申请人： Koji Watadani , Kenji Sato , Yoichiro Shimura , Hideo Tsuruta
发明人： Koji Watadani , Kenji Sato , Yoichiro Shimura , Hideo Tsuruta
IPC分类号： G01T1/00
CPC分类号： H01L27/14676
摘要： The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 Å. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 Å or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.
摘要翻译： 根据本发明的辐射检测器具有在对辐射敏感的非晶硒半导体膜（a-Se半导体膜）的表面上形成用于偏置电压的公共电极。 公共电极是厚度在100至1000埃范围内的金薄膜。 作为公共电极的金薄膜可以在相对低的气相沉积温度和减少的蒸镀时间形成在a-Se半导体膜的表面上。 该特征抑制由于共用电极的形成而导致的a-Se半导体膜的缺陷的产生。 用于公共电极的金薄膜不像现有技术那样厚，但为1000或更小。 随着厚度减小，公共电极相对于a-Se半导体膜具有改善的粘合性能。
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公开(公告)号：US07112800B2
公开(公告)日：2006-09-26
申请号：US10813339
申请日：2004-03-30
申请人： Kenji Sato , Koji Watadani
发明人： Kenji Sato , Koji Watadani
IPC分类号： G01T1/24
CPC分类号： G01T1/244 , H01L27/14609 , H01L27/14618 , H01L27/14676 , H01L2924/0002 , H04N5/32 , H01L2924/00
摘要： A portion corresponding to a surface lid section of a cabinet is formed using a nonconductive material. A structure is molded by using an insulating substance, an insulating plate member, and an insulating weir member so as to entirely cover a radiation-sensitive semiconductor and a voltage application electrode on an active matrix substrate. The area from the outer frame of the cabinet to the margin of the voltage application electrode is shielded by a shield member so as to cover any area, other than the portion just above the voltage application electrode, from above the insulating plate member.
摘要翻译： 使用非导电材料形成对应于机柜的表面盖部分的部分。 通过使用绝缘物质，绝缘板构件和绝缘堰构件来模制结构，以完全覆盖有源矩阵基板上的辐射敏感半导体和施加电压的电极。 从机柜的外框到施加电压的边缘的区域被屏蔽部件屏蔽，以便从绝缘板部件的上方覆盖电压施加电极以上的部分以外的任何区域。
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公开(公告)号：US08466534B2
公开(公告)日：2013-06-18
申请号：US13203769
申请日：2010-03-26
IPC分类号： H01L271/46
CPC分类号： H01L27/14676 , G01T1/244 , H01L31/085
摘要： The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.
摘要翻译： 本发明的结构包括依次层叠的有源矩阵基板，非晶硒层，高电阻层，金电极层，绝缘层和辅助板。 在本发明的一个方面，绝缘层具有添加无机阴离子交换剂，以提供防止非晶半导体层和载体选择性高电阻膜中的空隙形成和针孔形成的辐射检测器，而不会在 辅助板 无机阴离子交换剂吸附绝缘层中的氯离子，从而防止由于氯离子被吸引到金电极层而导致的X射线检测器的破坏。
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公开(公告)号：US20090050813A1
公开(公告)日：2009-02-26
申请号：US12280306
申请日：2006-02-23
申请人： Kenji Sato , Junichi Suzuki , Koji Watadani
发明人： Kenji Sato , Junichi Suzuki , Koji Watadani
IPC分类号： G01T1/24
CPC分类号： H01L31/115 , G01T1/244 , H01L27/14618 , H01L27/14676 , H01L31/02002 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： In a radiation detector according to this invention, a portion of a semiconductor, located in a connection of a common electrode to a lead wire, is dented in a recess form from other portions of a semiconductor, in a range short of a radiation detection effective area. An insulating seat is disposed to fill the portion located in the connection. The common electrode is formed to cover at least part of the seat. The lead wire is connected to a portion of the incidence surface of the common electrode located on the seat. Thus, the detector can avoid performance degradation resulting from connection of the lead wire to the common electrode, and avoid problems of heat deformation stress and radiation attenuation.
摘要翻译： 在根据本发明的辐射检测器中，位于公共电极与引线的连接中的半导体的一部分以半导体的其它部分凹陷地凹陷，在辐射检测有效的范围内 区。 设置绝缘座以填充位于连接中的部分。 公共电极形成为覆盖座椅的至少一部分。 引线连接到位于座椅上的公共电极的入射表面的一部分。 因此，检测器可以避免由引线与公共电极连接引起的性能下降，并避免热变形应力和辐射衰减的问题。
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公开(公告)号：US08564082B2
公开(公告)日：2013-10-22
申请号：US13063061
申请日：2008-09-10
CPC分类号： G01T1/244 , H01L27/14618 , H01L27/14676 , H01L2924/0002 , H01L2924/00
摘要： A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.
摘要翻译： 本发明的放射线检测器具有可固化的合成树脂膜，其覆盖辐射敏感半导体层，载体选择性高电阻膜和公共电极的暴露表面，其中不含氯化物的材料混合使用在制造过程中 可固化合成树脂膜。 这样可以防止载流子选择性高电阻膜和半导体层中的氯离子形成针孔和空隙。 也可以在公共电极的露出表面和可固化合成树脂膜之间设置不透过离子性材料的保护膜，由此防止载体选择性高电阻膜被包含在可固化合成树脂膜中的氯离子腐蚀 ，并且防止流过半导体层的暗电流增加。
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公开(公告)号：US20110315978A1
公开(公告)日：2011-12-29
申请号：US13203769
申请日：2010-03-26
IPC分类号： H01L31/0272
CPC分类号： H01L27/14676 , G01T1/244 , H01L31/085
摘要： The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.
摘要翻译： 本发明的结构包括依次层叠的有源矩阵基板，非晶硒层，高电阻层，金电极层，绝缘层和辅助板。 在本发明的一个方面，绝缘层具有添加无机阴离子交换剂，以提供防止非晶半导体层和载体选择性高电阻膜中的空隙形成和针孔形成的辐射检测器，而不会在 辅助板 无机阴离子交换剂吸附绝缘层中的氯离子，从而防止由于氯离子被吸引到金电极层而导致的X射线检测器的破坏。
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公开(公告)号：US07105829B2
公开(公告)日：2006-09-12
申请号：US10936673
申请日：2004-09-09
IPC分类号： G01T1/24 , H01L27/146
CPC分类号： H01L27/14678 , H01L27/14658
摘要： A radiation detector of this invention has an electrically insulating buffer seat disposed on a front surface of a radiation sensitive semiconductor, in a position outside a radiation detection effective area. A common electrode for bias voltage application is formed to cover the buffer seat. A lead wire for bias voltage supply is connected to a lead wire connection area, located on the buffer seat, of the surface of the common electrode. The buffer seat reduces a shock occurring when the lead wire is connected to the common electrode. As a result, the semiconductor and an intermediate layer are protected from damage which would lead to a lowering of performance. The buffer seat is disposed outside the radiation detection effective area. Thus, the buffer seat is provided without impairing the radiation detecting function.
摘要翻译： 本发明的放射线检测器具有设置在辐射敏感半导体的前表面上的辐射检测有效区域外的位置的电绝缘缓冲座。 形成用于偏置电压的公共电极以覆盖缓冲器座。 用于偏压供电的引线连接到位于公共电极表面的缓冲座上的引线连接区域。 缓冲座椅减少了引线连接到公共电极时发生的冲击。 结果，半导体和中间层被保护免受损坏，这将导致性能的降低。 缓冲座位置在放射线检测有效区域的外侧。 因此，提供缓冲座，而不损害辐射检测功能。
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公开(公告)号：US07875856B2
公开(公告)日：2011-01-25
申请号：US12280306
申请日：2006-02-23
申请人： Kenji Sato , Junichi Suzuki , Koji Watadani
发明人： Kenji Sato , Junichi Suzuki , Koji Watadani
IPC分类号： G01T1/24
CPC分类号： H01L31/115 , G01T1/244 , H01L27/14618 , H01L27/14676 , H01L31/02002 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： In a radiation detector according to this invention, a portion of a semiconductor, located in a connection of a common electrode to a lead wire, is dented in a recess form from other portions of a semiconductor, in a range short of a radiation detection effective area. An insulating seat is disposed to fill the portion located in the connection. The common electrode is formed to cover at least part of the seat. The lead wire is connected to a portion of the incidence surface of the common electrode located on the seat. Thus, the detector can avoid performance degradation resulting from connection of the lead wire to the common electrode, and avoid problems of heat deformation stress and radiation attenuation.
摘要翻译： 在根据本发明的辐射检测器中，位于公共电极与引线的连接中的半导体的一部分以半导体的其它部分凹陷地凹陷，在辐射检测有效的范围内 区。 设置绝缘座以填充位于连接中的部分。 公共电极形成为覆盖座椅的至少一部分。 引线连接到位于座椅上的公共电极的入射表面的一部分。 因此，检测器可以避免由引线连接到公共电极而引起的性能下降，并避免热变形应力和辐射衰减的问题。
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公开(公告)号：US20050061987A1
公开(公告)日：2005-03-24
申请号：US10942846
申请日：2004-09-17
申请人： Koji Watadani , Kenji Sato , Yoichiro Shimura , Hideo Tsuruta
发明人： Koji Watadani , Kenji Sato , Yoichiro Shimura , Hideo Tsuruta
IPC分类号： G01T1/24 , A61B6/00 , G01J1/02 , H01L27/14 , H01L27/146 , H01L31/0224 , H01L31/08 , H01L31/09 , H01L31/115
CPC分类号： H01L27/14676
摘要： The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 Å. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 Å or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.
摘要翻译： 根据本发明的辐射检测器具有在对辐射敏感的非晶硒半导体膜（a-Se半导体膜）的表面上形成用于偏置电压的公共电极。 公共电极是厚度在100至1000埃范围内的金薄膜。 作为公共电极的金薄膜可以在相对低的气相沉积温度和减少的蒸镀时间形成在a-Se半导体膜的表面上。 该特征抑制由于共用电极的形成而导致的a-Se半导体膜的缺陷的产生。 用于公共电极的金薄膜不像现有技术那样厚，但为1000或更小。 随着厚度减小，公共电极相对于a-Se半导体膜具有改善的粘合性能。
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