摘要:
A plasma processing apparatus includes a conductive thin film provided on a surface of a microwave introducing member which is exposed to a processing chamber, in which an object to be processed is placed. The conductive thin film is provided at the entire portion excluding a transmission portion, through which microwaves pass into the processing chamber. The conductive thin film is grounded to act as an electrode.
摘要:
A plasma processing apparatus includes a microwave introducing member, which is provided with a microwave transmission opening through which microwaves pass into a processing chamber. The microwave introducing member is also provided at a transmission opening with a dielectric member. Preferably, the dielectric member is formed to have a relative dielectric constant of 4 to 10 and an insulation resistance of 10.sup.8 to 10.sup.12 .OMEGA..