公开(公告)号：US20100272892A1

公开(公告)日：2010-10-28

申请号：US12752383

申请日：2010-04-01

申请人： Hidenori KOBAYASHI ,  Kouichi NISHIKIDO ,  Motonori NAKAMURA

发明人： Hidenori KOBAYASHI ,  Kouichi NISHIKIDO ,  Motonori NAKAMURA

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/4584 ,  C23C16/52

摘要： A plurality of partial control zones (an LL zone, an LR zone, and an R zone) that can control a gas flow rate independently in a widthwise direction of a gas flow are configured on an upstream side of the gas inlet port 20B. A control device 66 is disposed to control a gas flow rate for respective partial control zones. The control device 66 obtains a deviation between a film growth rate and a predetermined target film growth rate at a variety of locations on a wafer 28 based on the data of a thickness of a film that has been formed on the wafer 28 by a rotating film formation carried out while rotating the wafer 28, and controls the respective gas flow rates of the partial control zones by using the rotation film growth sensitivity data 72 that defines a sensitivity to a change in a film growth rate distribution during the rotating film formation on the wafer 28 in such a manner that a change in the respective gas flow rates of the partial control zones causes the deviation at a variety of the locations to be reduced.

摘要翻译： 在气体导入口20B的上游侧，配置能够在气流的宽度方向独立地控制气体流量的多个部分控制区域（LL区域，LR区域，R区域）。 设置控制装置66以控制各个部分控制区的气体流量。 控制装置66基于通过旋转膜在晶片28上形成的膜的厚度的数据，获得晶片28上的各种位置处的膜生长速率和预定的目标膜生长速度之间的偏差 在旋转晶片28的同时进行形成，并且通过使用旋转膜生长灵敏度数据72来控制部分控制区域的各自的气体流量，旋转膜生长灵敏度数据72限定对旋转成膜期间的膜生长速率分布的变化的灵敏度 晶片28，使得部分控制区域的各个气体流量的变化导致各种位置处的偏差减小。

公开(公告)号：US20090031954A1

公开(公告)日：2009-02-05

申请号：US12278650

申请日：2007-02-08

申请人： Kouichi Nishikido ,  Motonori Nakamura ,  Atsuhiko Hirosawa ,  Noboru Iida ,  Norihiko Sato ,  Atsushi Nagato ,  Toshiyuki Kamei

发明人： Kouichi Nishikido ,  Motonori Nakamura ,  Atsuhiko Hirosawa ,  Noboru Iida ,  Norihiko Sato ,  Atsushi Nagato ,  Toshiyuki Kamei

IPC分类号： C23C16/00

CPC分类号： H01L21/67115 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/68735

摘要： A susceptor capable of reducing unevenness in a film-thickness of an epitaxial film on an outer surface of a substrate wafer and a manufacturing apparatus of an epitaxial wafer are provided. The susceptor includes a wafer placement and a peripheral portion. The wafer placement is greater in size than the substrate wafer W and substantially disc-shaped. The peripheral portion is substantially in a ring-plate shape and includes: an inner circumference standing in a fashion surrounding a peripheral portion of the wafer placement; and an upper surface outwardly extending from an upper end of the inner circumference in parallel to the placement surface of the wafer placement. In the chemical vapor deposition control unit, an inner circumference has a curvature substantially similar to a curvature of the inner circumference of the peripheral portion, and the upper surface is leveled with the upper surface) of the peripheral portion. The chemical vapor deposition control unit is made of SiO2 which is less reactive with a reaction gas than a SiC film.

摘要翻译： 提供一种能够减小衬底晶片的外表面上的外延膜的膜厚度和外延晶片的制造装置的基座。 感受体包括晶片放置和周边部分。 晶片放置的尺寸大于衬底晶片W并且基本上是圆盘形。 周边部分基本上是环形的，并且包括：以围绕晶片放置的周边部分的方式站立的内圆周; 以及从内圆周的上端平行于晶片放置的放置表面向外延伸的上表面。 在化学气相沉积控制单元中，内圆周具有与周边部分的内周的曲率大致相似的曲率，并且上表面与上表面平齐）。 化学气相沉积控制单元由与SiC膜反应气反应性较低的SiO 2制成。

公开(公告)号：US20070281084A1

公开(公告)日：2007-12-06

申请号：US11806091

申请日：2007-05-30

申请人： Atsuhiko Hirosawa ,  Noboru Iida ,  Norihiko Sato ,  Atsushi Nagato ,  Toshiyuki Kamei ,  Kouichi Nishikido ,  Motonori Nakamura

发明人： Atsuhiko Hirosawa ,  Noboru Iida ,  Norihiko Sato ,  Atsushi Nagato ,  Toshiyuki Kamei ,  Kouichi Nishikido ,  Motonori Nakamura

IPC分类号： C23C16/00 ,  B05C11/00

CPC分类号： C23C16/45565 ,  C23C16/52

摘要： A reactant gas is supplied to a gas inlet port 40B of a reaction chamber 20A from a plurality of gas flow paths 36A. The number of gas flow paths 36A is five or more within a range of one side of the gas inlet port 40B divided in two at the center thereof. The pitch between adjacent gas flow paths 36A is 10 mm or more. A baffle 38 having a plurality of slit holes 38A is disposed upstream of the gas flow paths 36A. The gas flow rates of the respective gas flow paths 36A are adjusted by recurrent calculation using layer growth sensitivity data that defines the relation between the gas flow rates of the respective gas flow paths 36A.

摘要翻译： 反应气体从多个气体流路36A供给到反应室20A的气体导入口40B。气体流路36A的数量在气体入口的一侧的范围内为5以上 端口40B在其中心分为两个。 相邻气体流路36A之间的间距为10mm以上。 具有多个狭缝孔38A的挡板38设置在气体流路36A的上游。各气体流路36A的气体流量通过使用层生长敏感性数据的复数计算进行调整，该层生长敏感性数据定义了 各气体流路36A的气体流量。