公开(公告)号：US07786005B2

公开(公告)日：2010-08-31

申请号：US11369955

申请日：2006-03-08

申请人： Kenichi Yamamoto ,  Masashige Moritoki ,  Takashi Shimane ,  Kazumi Saito ,  Hiroaki Tomimori ,  Takamasa Itou ,  Kousei Ushijima ,  Katsuro Tateyama

发明人： Kenichi Yamamoto ,  Masashige Moritoki ,  Takashi Shimane ,  Kazumi Saito ,  Hiroaki Tomimori ,  Takamasa Itou ,  Kousei Ushijima ,  Katsuro Tateyama

IPC分类号： H01L21/467

CPC分类号： H01L21/02063 ,  H01L21/76814

摘要： An increase of the via resistance resulted due to the presence of the altered layer that has been formed and grown after the formation of the via hole can be effectively prevented, thereby providing an improved reliability of the semiconductor device. A method includes: forming a TiN film on the semiconductor substrate; forming an interlayer insulating film on a surface of the TiN film; forming a resist film on a surface of the interlayer insulating film; etching the semiconductor substrate having the resist film formed thereon to form an opening, thereby partially exposing the TiN film; plasma-processing the exposed portion of the TiN film to remove an altered layer formed in the exposed portion of the TiN film; and stripping the resist film via a high temperature-plasma processing.

摘要翻译： 由于可以有效地防止在形成通孔之后形成和生长的改变层的存在而导致的通孔电阻的增加，从而提供了半导体器件的改进的可靠性。 一种方法包括：在半导体衬底上形成TiN膜; 在TiN膜的表面上形成层间绝缘膜; 在所述层间绝缘膜的表面上形成抗蚀剂膜; 蚀刻其上形成有抗蚀剂膜的半导体衬底以形成开口，从而部分地暴露TiN膜; 等离子体处理TiN膜的暴露部分以去除在TiN膜的暴露部分中形成的改变的层; 并通过高温等离子体处理剥离抗蚀剂膜。

公开(公告)号：US20060214300A1

公开(公告)日：2006-09-28

申请号：US11369955

申请日：2006-03-08

申请人： Kenichi Yamamoto ,  Masashige Moritoki ,  Takashi Shimane ,  Kazumi Saito ,  Hiroaki Tomimori ,  Takamasa Itou ,  Kousei Ushijima ,  Katsuro Tateyama

发明人： Kenichi Yamamoto ,  Masashige Moritoki ,  Takashi Shimane ,  Kazumi Saito ,  Hiroaki Tomimori ,  Takamasa Itou ,  Kousei Ushijima ,  Katsuro Tateyama

IPC分类号： H01L23/52

CPC分类号： H01L21/02063 ,  H01L21/76814

摘要： An increase of the via resistance resulted due to the presence of the altered layer that has been formed and grown after the formation of the via hole can be effectively prevented, thereby providing an improved reliability of the semiconductor device. A method includes: forming a TiN film on the semiconductor substrate; forming an interlayer insulating film on a surface of the TiN film; forming a resist film on a surface of the interlayer insulating film; etching the semiconductor substrate having the resist film formed thereon to form an opening, thereby partially exposing the TiN film; plasma-processing the exposed portion of the TiN film to remove an altered layer formed in the exposed portion of the TiN film; and stripping the resist film via a high temperature-plasma processing.

摘要翻译： 由于可以有效地防止在形成通孔之后形成和生长的改变层的存在而导致的通孔电阻的增加，从而提供了半导体器件的改进的可靠性。 一种方法包括：在半导体衬底上形成TiN膜; 在TiN膜的表面上形成层间绝缘膜; 在所述层间绝缘膜的表面上形成抗蚀剂膜; 蚀刻其上形成有抗蚀剂膜的半导体衬底以形成开口，从而部分地暴露TiN膜; 等离子体处理TiN膜的暴露部分以去除在TiN膜的暴露部分中形成的改变的层; 并通过高温等离子体处理剥离抗蚀剂膜。

公开(公告)号：US07510967B2

公开(公告)日：2009-03-31

申请号：US11802841

申请日：2007-05-25

申请人： Kousei Ushijima

发明人： Kousei Ushijima

IPC分类号： H01L21/44 ,  H01L21/311 ,  H01L21/4763

CPC分类号： H01L21/02063 ,  H01L21/31116

摘要： The present invention relates to a method for manufacturing a semiconductor device, comprising: forming a metal interconnect on a substrate; forming a refractory metal layer containing titanium (Ti) or tantalum (Ta) on a surface of the metal interconnect; forming an insulating interlayer so as to cover the refractory metal layer; selectively etching the insulating interlayer with an etchant gas containing an organic fluoride to form a hole, in which the refractory metal layer is exposed; treating an interior of the hole with an organic chemical solution to remove fluorinated compounds of Ti or Ta while leaving fluorocarbons on the surface of the refractory metal layer, the fluorinated compounds of Ti or Ta and the fluorocarbons being created during the etching step and present in the interior of the hole; and performing plasma-treatment for the interior of said hole to remove the fluorocarbon.

摘要翻译： 本发明涉及一种用于制造半导体器件的方法，包括：在衬底上形成金属互连; 在所述金属互连件的表面上形成含有钛（Ti）或钽（Ta）的难熔金属层; 形成绝缘夹层以覆盖难熔金属层; 用含有机氟化物的蚀刻剂气体选择性地蚀刻绝缘中间层，形成难熔金属层露出的孔; 用有机化学溶液处理孔的内部以除去Ti或Ta的含氟化合物，同时在耐火金属层的表面上留下碳氟化合物，Ti或Ta的氟化化合物和在刻蚀步骤期间产生的碳氟化合物 孔的内部; 并对所述孔的内部进行等离子体处理以除去碳氟化合物。

公开(公告)号：US20070275558A1

公开(公告)日：2007-11-29

申请号：US11802841

申请日：2007-05-25

申请人： Kousei Ushijima

发明人： Kousei Ushijima

IPC分类号： H01L21/4763

CPC分类号： H01L21/02063 ,  H01L21/31116

摘要： The present invention relates to a method for manufacturing a semiconductor device, comprising: forming a metal interconnect on a substrate; forming a refractory metal layer containing titanium (Ti) or tantalum (Ta) on a surface of the metal interconnect; forming an insulating interlayer so as to cover the refractory metal layer; selectively etching the insulating interlayer with an etchant gas containing an organic fluoride to form a hole, in which the refractory metal layer is exposed; treating an interior of the hole with an organic chemical solution to remove fluorinated compounds of Ti or Ta while leaving fluorocarbons on the surface of the refractory metal layer, the fluorinated compounds of Ti or Ta and the fluorocarbons being created during the etching step and present in the interior of the hole; and performing plasma-treatment for the interior of said hole to remove the fluorocarbon.

摘要翻译： 本发明涉及一种用于制造半导体器件的方法，包括：在衬底上形成金属互连; 在所述金属互连件的表面上形成含有钛（Ti）或钽（Ta）的难熔金属层; 形成绝缘夹层以覆盖难熔金属层; 用含有机氟化物的蚀刻剂气体选择性地蚀刻绝缘中间层，形成难熔金属层露出的孔; 用有机化学溶液处理孔的内部以除去Ti或Ta的含氟化合物，同时在耐火金属层的表面上留下碳氟化合物，Ti或Ta的氟化化合物和在刻蚀步骤期间产生的碳氟化合物 孔的内部; 并对所述孔的内部进行等离子体处理以除去碳氟化合物。