公开(公告)号：US07786005B2

公开(公告)日：2010-08-31

申请号：US11369955

申请日：2006-03-08

申请人： Kenichi Yamamoto ,  Masashige Moritoki ,  Takashi Shimane ,  Kazumi Saito ,  Hiroaki Tomimori ,  Takamasa Itou ,  Kousei Ushijima ,  Katsuro Tateyama

发明人： Kenichi Yamamoto ,  Masashige Moritoki ,  Takashi Shimane ,  Kazumi Saito ,  Hiroaki Tomimori ,  Takamasa Itou ,  Kousei Ushijima ,  Katsuro Tateyama

IPC分类号： H01L21/467

CPC分类号： H01L21/02063 ,  H01L21/76814

摘要： An increase of the via resistance resulted due to the presence of the altered layer that has been formed and grown after the formation of the via hole can be effectively prevented, thereby providing an improved reliability of the semiconductor device. A method includes: forming a TiN film on the semiconductor substrate; forming an interlayer insulating film on a surface of the TiN film; forming a resist film on a surface of the interlayer insulating film; etching the semiconductor substrate having the resist film formed thereon to form an opening, thereby partially exposing the TiN film; plasma-processing the exposed portion of the TiN film to remove an altered layer formed in the exposed portion of the TiN film; and stripping the resist film via a high temperature-plasma processing.

摘要翻译： 由于可以有效地防止在形成通孔之后形成和生长的改变层的存在而导致的通孔电阻的增加，从而提供了半导体器件的改进的可靠性。 一种方法包括：在半导体衬底上形成TiN膜; 在TiN膜的表面上形成层间绝缘膜; 在所述层间绝缘膜的表面上形成抗蚀剂膜; 蚀刻其上形成有抗蚀剂膜的半导体衬底以形成开口，从而部分地暴露TiN膜; 等离子体处理TiN膜的暴露部分以去除在TiN膜的暴露部分中形成的改变的层; 并通过高温等离子体处理剥离抗蚀剂膜。

公开(公告)号：US20060214300A1

公开(公告)日：2006-09-28

申请号：US11369955

申请日：2006-03-08

申请人： Kenichi Yamamoto ,  Masashige Moritoki ,  Takashi Shimane ,  Kazumi Saito ,  Hiroaki Tomimori ,  Takamasa Itou ,  Kousei Ushijima ,  Katsuro Tateyama

发明人： Kenichi Yamamoto ,  Masashige Moritoki ,  Takashi Shimane ,  Kazumi Saito ,  Hiroaki Tomimori ,  Takamasa Itou ,  Kousei Ushijima ,  Katsuro Tateyama

IPC分类号： H01L23/52

CPC分类号： H01L21/02063 ,  H01L21/76814

摘要： An increase of the via resistance resulted due to the presence of the altered layer that has been formed and grown after the formation of the via hole can be effectively prevented, thereby providing an improved reliability of the semiconductor device. A method includes: forming a TiN film on the semiconductor substrate; forming an interlayer insulating film on a surface of the TiN film; forming a resist film on a surface of the interlayer insulating film; etching the semiconductor substrate having the resist film formed thereon to form an opening, thereby partially exposing the TiN film; plasma-processing the exposed portion of the TiN film to remove an altered layer formed in the exposed portion of the TiN film; and stripping the resist film via a high temperature-plasma processing.

摘要翻译： 由于可以有效地防止在形成通孔之后形成和生长的改变层的存在而导致的通孔电阻的增加，从而提供了半导体器件的改进的可靠性。 一种方法包括：在半导体衬底上形成TiN膜; 在TiN膜的表面上形成层间绝缘膜; 在所述层间绝缘膜的表面上形成抗蚀剂膜; 蚀刻其上形成有抗蚀剂膜的半导体衬底以形成开口，从而部分地暴露TiN膜; 等离子体处理TiN膜的暴露部分以去除在TiN膜的暴露部分中形成的改变的层; 并通过高温等离子体处理剥离抗蚀剂膜。

公开(公告)号：US06998352B2

公开(公告)日：2006-02-14

申请号：US10284191

申请日：2002-10-31

申请人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Kenichi Yamamoto

发明人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Kenichi Yamamoto

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  C11D7/265 ,  C11D7/3245 ,  C11D11/0047 ,  G03F7/422 ,  H01L21/02074

摘要： A cleaning solution having an oxidation-reduction potential lower than that of pure water and a pH value of 4 or below is used to remove metal contamination, thereby efficiently removing the metal contamination adhered onto a surface of a substrate without damaging an underlayer.

公开(公告)号：US07192835B2

公开(公告)日：2007-03-20

申请号：US10854306

申请日：2004-05-27

申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

IPC分类号： H01L21/302 ,  H01L21/336

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿蚀刻被选择性地通过多晶硅层56的掩模去除。 对于蚀刻剂溶液使用磷酸和硫酸的液体混合物。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

公开(公告)号：US20070015351A1

公开(公告)日：2007-01-18

申请号：US11525943

申请日：2006-09-25

申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Kaoru Mikagi ,  Akira Furuya ,  Tetsuya Tao

发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Kaoru Mikagi ,  Akira Furuya ,  Tetsuya Tao

IPC分类号： H01L21/44 ,  H01L21/302

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03019 ,  H01L2224/035 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05561 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05552

摘要： An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.

摘要翻译： 通过用有机酸处理表面，在铜膜的表面上形成凹凸后，用草酸清洗形成在电极焊盘的铜膜表面上的氧化膜。 由此，通过使探针与电极焊盘接触进行特性检查时，获得稳定的电阻，并且通过用显微镜观察容易地识别出探针与电极焊盘接触。 此外，相对于焊料的润湿性是令人满意的，并且可以有利地在电极焊盘上形成焊料凸块。

公开(公告)号：US07138362B2

公开(公告)日：2006-11-21

申请号：US10369877

申请日：2003-02-19

申请人： Yumiko Abe ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori ,  Yoshiko Kasama

发明人： Yumiko Abe ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori ,  Yoshiko Kasama

IPC分类号： C11D7/50

CPC分类号： C11D3/2082 ,  C11D1/004 ,  C11D1/22 ,  C11D1/24 ,  C11D1/345 ,  C11D1/72 ,  C11D3/2086 ,  C11D11/0047

摘要： There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

公开(公告)号：US06787480B2

公开(公告)日：2004-09-07

申请号：US10071184

申请日：2002-02-11

申请人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Norio Okada ,  Tatsuya Usami ,  Koichi Ohto ,  Takamasa Tanikuni

发明人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Norio Okada ,  Tatsuya Usami ,  Koichi Ohto ,  Takamasa Tanikuni

IPC分类号： H01L21324

CPC分类号： H01L21/02074 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883

摘要： In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.

摘要翻译： 为了提供能够提高互连寿命的半导体器件的制造方法，同时控制其电阻的增加，并且还可以提高制造稳定性; 通过使用包含氮元素的源气体在铜互连17的表面上施加等离子体处理，形成氮化铜层24，然后形成氮化硅膜18。 此时，在氮化铜层24的下方形成有薄的硅化铜层25。

公开(公告)号：US07312186B2

公开(公告)日：2007-12-25

申请号：US10750971

申请日：2004-01-05

申请人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

发明人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

IPC分类号： C11D1/72 ,  C11D1/722 ,  C11D7/08 ,  C11D9/22

CPC分类号： H01L21/02074 ,  C11D1/722 ,  C11D3/2086 ,  C11D3/2093 ,  C11D3/33 ,  C11D3/361 ,  C11D11/0047 ,  H01L21/02065

摘要： A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator: CH3—(CH2)l—O—(CmH2mO)n—X   (1) wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group; CH3—(CH2)a—O—(CbH2bO)d—(CxH2xO)y—X   (2) wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

摘要翻译： 一种用于半导体衬底的清洁溶液，其包含式（1）和/或式（2）的非离子表面活性剂，螯合剂和螯合促进剂：<？in-line-formula description =“In-Line Formulas” 结束=“铅”→CH 3 - （CH 2） ＆lt; 2m＆lt; O＆lt; n＆gt; -X（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中l，m和 n独立地表示正数，X表示氢原子或烃基; <？in-line-formula description =“In-line Formulas”end =“lead”？> CH 3 - （CH 2） > - （C b H 2b）O - （C x H 2 H 2） 其中a，b，d，x和y分别代表一个或多个，其中a，b，d，x和y 独立地表示正数，b和x不同，X表示氢原子或烃基。

公开(公告)号：US07087562B2

公开(公告)日：2006-08-08

申请号：US10435165

申请日：2003-05-09

申请人： Yumiko Abe ,  Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori

发明人： Yumiko Abe ,  Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori

IPC分类号： C11D3/22

CPC分类号： H01L21/02074 ,  C11D3/2075 ,  C11D7/26 ,  C11D11/0047

摘要： A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a pH of less than 3.0. This washing liquid has excellent performance in removing micro particles and metal impurities adhering to the surface of a semiconductor substrate after CMP and does not corrode a metal wiring material.

公开(公告)号：US06592677B1

公开(公告)日：2003-07-15

申请号：US09678608

申请日：2000-10-04

申请人： Hiroaki Tomimori ,  Hidemitsu Aoki

发明人： Hiroaki Tomimori ,  Hidemitsu Aoki

IPC分类号： C23G102

CPC分类号： H01L21/02063 ,  C11D7/02 ,  C11D11/0047 ,  C23F1/18 ,  H01L21/67046 ,  H01L21/67051

摘要： The present invention provides a method of removing a Cu-contamination from a wafer surface having a Cu-based metal region, comprising the step of: carrying out a cleaning process by use of a cleaning solution free of HF and capable of oxidation to the wafer surface for not only removing the Cu-contamination from the wafer surface but also oxidizing the wafer surface to cause the wafer surface to have a hydrophilicity.

摘要翻译： 本发明提供一种从具有Cu基金属区域的晶片表面除去Cu污染物的方法，包括以下步骤：通过使用不含HF并能够氧化成晶片的清洗溶液进行清洗处理 表面，用于不仅从晶片表面去除铜污染，而且氧化晶片表面以使晶片表面具有亲水性。