摘要:
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
摘要:
A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm−3 to about 5×1018 cm−3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm−3 to about 5×1015 cm−3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
摘要翻译:提供一种检测装置及其制造和使用方法。 检测装置可以包括:SiC衬底,其限定从平面切割到约12°的衬底表面; 衬底表面上的缓冲外延层; 缓冲外延层上的n型外延层; 和n型外延层上的顶部接触。 缓冲外延层可以包括以氮,硼,铝或其混合物掺杂浓度为约1×10 15 cm -3至约5×10 18 cm -3的n型4H-SiC外延层。 n型外延层可以包括用氮气掺杂浓度为约1×1013cm-3至约5×1015cm-3的n型4H-SiC外延层。 顶部接触可以具有约8nm至约15nm的厚度。
摘要:
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
摘要:
A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm−3 to about 5×1018 cm−3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm−3 to about 5×1015 cm−3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
摘要翻译:提供一种检测装置及其制造和使用方法。 检测装置可以包括:SiC衬底,其限定从平面切割到约12°的衬底表面; 衬底表面上的缓冲外延层; 缓冲外延层上的n型外延层; 和n型外延层上的顶部接触。 缓冲外延层可以包括以氮,硼,铝或其混合物掺杂浓度为约1×10 15 cm -3至约5×10 18 cm -3的n型4H-SiC外延层。 n型外延层可以包括用氮气掺杂浓度为约1×1013cm-3至约5×1015cm-3的n型4H-SiC外延层。 顶部接触可以具有约8nm至约15nm的厚度。