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公开(公告)号：US07550735B2
公开(公告)日：2009-06-23
申请号：US11824094
申请日：2007-06-29
IPC分类号： G01T1/24 , H01L27/146
CPC分类号： G01T1/24
摘要： GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
摘要翻译： GaTe半导体用作室温辐射检测器。 GaTe对辐射探测器具有有用的特性：理想的带隙，良好的迁移率，低熔点（无蒸发），非吸湿特性和高纯度起始材料的可用性。 检测器可以用于例如在入口港口，城市和离岸地检测非法核武器和放射性分散装置，并用于确定存在于患者中的医用同位素。
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公开(公告)号：US20090001277A1
公开(公告)日：2009-01-01
申请号：US11824094
申请日：2007-06-29
CPC分类号： G01T1/24
摘要： GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
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3.发明申请Schottky Barrier Detection Devices Having a 4H-SiC n-Type Epitaxial Layer 有权具有4H-SiC n型外延层的肖特基势垒检测器件公开(公告)号：US20150028353A1
公开(公告)日：2015-01-29
申请号：US14444140
申请日：2014-07-28
IPC分类号： H01L31/028 , H01L31/0224 , H01L31/036
CPC分类号： H01L31/036 , H01L31/0312 , H01L31/118 , H01L33/0033
摘要： A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm−3 to about 5×1018 cm−3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm−3 to about 5×1015 cm−3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
摘要翻译： 提供一种检测装置及其制造和使用方法。 检测装置可以包括：SiC衬底，其限定从平面切割到约12°的衬底表面; 衬底表面上的缓冲外延层; 缓冲外延层上的n型外延层; 和n型外延层上的顶部接触。 缓冲外延层可以包括以氮，硼，铝或其混合物掺杂浓度为约1×10 15 cm -3至约5×10 18 cm -3的n型4H-SiC外延层。 n型外延层可以包括用氮气掺杂浓度为约1×1013cm-3至约5×1015cm-3的n型4H-SiC外延层。 顶部接触可以具有约8nm至约15nm的厚度。
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4.发明授权Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer 有权具有4H-SiC n型外延层的肖特基势垒检测器件公开(公告)号：US09515211B2
公开(公告)日：2016-12-06
申请号：US14444140
申请日：2014-07-28
IPC分类号： H01L31/0312 , H01L31/036 , H01L31/118 , H01L33/00
CPC分类号： H01L31/036 , H01L31/0312 , H01L31/118 , H01L33/0033
摘要： A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm−3 to about 5×1018 cm−3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm−3 to about 5×1015 cm−3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
摘要翻译： 提供一种检测装置及其制造和使用方法。 检测装置可以包括：SiC衬底，其限定从平面切割到约12°的衬底表面; 衬底表面上的缓冲外延层; 缓冲外延层上的n型外延层; 和n型外延层上的顶部接触。 缓冲外延层可以包括以氮，硼，铝或其混合物掺杂浓度为约1×10 15 cm -3至约5×10 18 cm -3的n型4H-SiC外延层。 n型外延层可以包括用氮气掺杂浓度为约1×1013cm-3至约5×1015cm-3的n型4H-SiC外延层。 顶部接触可以具有约8nm至约15nm的厚度。
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