MOLYBDENUM SELENIDE SUBLAYERS WITH CONTROLLED THICKNESS IN SOLAR CELLS AND METHODS FOR FORMING THE SAME
    2.
    发明申请
    MOLYBDENUM SELENIDE SUBLAYERS WITH CONTROLLED THICKNESS IN SOLAR CELLS AND METHODS FOR FORMING THE SAME 审中-公开
    太阳能电池中具有受控厚度的多晶硅二极管及其形成方法

    公开(公告)号:US20140130856A1

    公开(公告)日:2014-05-15

    申请号:US13677361

    申请日:2012-11-15

    Abstract: A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.

    Abstract translation: 提供了一种在钼背电极上方具有钼背电极层和硒化钼欧姆接触层的太阳能电池。 硒化钼层包括精确控制的厚度。 在钼背电极层和硅化钼层之间存在明显的界面。 通过在最初形成的钼层上形成钼层或氮化钼层或氧化钼层,使得在两层之间存在界面来制造硅化钼层。 进行硒化和硫化处理以选择性地将含钼层转化为硒化钼,而不是保留为钼层的原始钼背电极层。

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