公开(公告)号：US6034439A

公开(公告)日：2000-03-07

申请号：US41020

申请日：1998-03-12

申请人： Kuo-Shi Teng ,  Hao-Chieh Yung ,  Shing-Shing Chiang ,  Wen-Haw Lu

发明人： Kuo-Shi Teng ,  Hao-Chieh Yung ,  Shing-Shing Chiang ,  Wen-Haw Lu

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05093 ,  H01L2224/05556 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014

摘要： A method for preventing bonding pads from peeling caused by plug process comprises the following steps. First, a substrate is prepared, and then a first conductor is formed on the substrate. Next, a dielectric layer is formed on the first conductor. After that, a big contact window and a plurality of small contact windows are formed on the dielectric layer, wherein the plurality of small contact windows are located around the big window, and the sizes of the big contact window and small contact windows are over 3 .mu.m. Subsequently, a metal plug layer is formed on the dielectric layer, big contact window and small contact windows. Thereafter, the metal plug layer is etched back to form metal spacers on the sidewalls of the big contact window and small contact windows. Finally, a second conductor is formed on the dielectric layer, big contact window, small contact windows and metal spacers. Since the second conductor is directly connected to the first conductor in the invention, bonding pads peeling can be thoroughly prevented during connecting between the bonding pads and outside pins.

摘要翻译： 用于防止由焊接过程引起的焊盘剥离的方法包括以下步骤。 首先，准备基板，然后在基板上形成第一导体。 接下来，在第一导体上形成电介质层。 之后，在电介质层上形成大的接触窗和多个小接触窗，其中多个小接触窗位于大窗周围，大接触窗和小接触窗的尺寸超过3 亩 随后，在电介质层，大接触窗和小接触窗上形成金属塞层。 此后，金属插塞层被回蚀以在大接触窗的侧壁和小的接触窗口上形成金属间隔物。 最后，在电介质层，大接触窗，小接触窗和金属间隔物上形成第二导体。 由于在本发明中第二导体直接连接到第一导体，因此在连接焊盘和外部引脚之间可以彻底地防止焊盘剥离。

公开(公告)号：US06660593B2

公开(公告)日：2003-12-09

申请号：US09747374

申请日：2000-12-21

申请人： Shing-Sing Chiang ,  Kuo-Shi Teng ,  Hao-Chieh Yung ,  Yi-Shi Chen

发明人： Shing-Sing Chiang ,  Kuo-Shi Teng ,  Hao-Chieh Yung ,  Yi-Shi Chen

IPC分类号： H01L2100

CPC分类号： H01L21/823462 ,  H01L21/32

摘要： A method for fabricating oxide layers with different thicknesses on a substrate is described. A field oxide layer is formed on the substrate to define a first active region and a second active region therebetween. A first oxide layer is formed over the first active region. A thin oxynitride layer is formed on the first oxide layer. The substrate is oxidized to form a second oxide layer over the second active region, wherein the second oxide layer has a thickness different from the thickness of the first oxide layer,