-
公开(公告)号：US09129769B2
公开(公告)日：2015-09-08
申请号：US12875771
申请日：2010-09-03
Applicant: Chung-Hsiung Wang , Hung-Ming Lin , Wen-Shiang Luo , Chun-Tiao Liu , Kuo-Shu Chen
Inventor： Chung-Hsiung Wang , Hung-Ming Lin , Wen-Shiang Luo , Chun-Tiao Liu , Kuo-Shu Chen
IPC: H01H85/48 , H01H85/02 , H01H85/00 , H01H85/041 , H01H69/02 , H01H85/046 , H01H85/048 , H01H85/11 , H01H85/46
CPC classification number: H01H85/48 , H01H69/022 , H01H85/0047 , H01H85/0241 , H01H85/0411 , H01H85/046 , H01H85/048 , H01H85/11 , H01H2085/0283 , H01H2085/466
Abstract: A protective device including a substrate, a conductive section and a bridge element is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The bridge element spans across the metal element in a direction across direction of current flow in the metal element, wherein the bridge element facilitates breaking of the metal element upon melting.
Abstract translation: 提供了包括基板，导电部分和桥接元件的保护装置。 导电部分由衬底支撑，其中导电部分包括电连接在第一和第二电极之间的金属元件。 金属元件用作熔点低于第一和第二电极的熔点的牺牲结构。 桥接元件跨过金属元件横跨金属元件中的电流流动方向穿过金属元件，其中桥接元件有助于熔化时金属元件的断裂。
-
公开(公告)号：US20100134937A1
公开(公告)日：2010-06-03
申请号：US12509484
申请日：2009-07-26
Applicant: CHUNG-HSIUNG WANG , Hung-Ming LIN , Kuo-Shu CHEN , Wen-Shiang LUO
Inventor： CHUNG-HSIUNG WANG , Hung-Ming LIN , Kuo-Shu CHEN , Wen-Shiang LUO
CPC classification number: C25D5/022
Abstract: An over-voltage protection device and a method for manufacturing the over-voltage protection device are provided. The over-voltage protection device includes a substrate, a pair of electrode layers, a mask layer, and a sealing layer. The electrode layers are disposed on the substrate, and a gap is formed between the electrode layers. The mask layer is disposed over the gap and a portion of the electrode layers. The sealing layer covers the mask layer and the gap.
Abstract translation: 提供了一种过电压保护装置和用于制造过电压保护装置的方法。 过电压保护装置包括基板，一对电极层，掩模层和密封层。 电极层设置在基板上，并且在电极层之间形成间隙。 掩模层设置在间隙和电极层的一部分之上。 密封层覆盖掩模层和间隙。
-
公开(公告)号：US08089741B2
公开(公告)日：2012-01-03
申请号：US12509484
申请日：2009-07-26
Applicant: Chung-Hsiung Wang , Hung-Ming Lin , Kuo-Shu Chen , Wen-Shiang Luo
Inventor： Chung-Hsiung Wang , Hung-Ming Lin , Kuo-Shu Chen , Wen-Shiang Luo
CPC classification number: C25D5/022
Abstract: An over-voltage protection device and a method for manufacturing the over-voltage protection device are provided. The over-voltage protection device includes a substrate, a pair of electrode layers, a mask layer, and a sealing layer. The electrode layers are disposed on the substrate, and a gap is formed between the electrode layers. The mask layer is disposed over the gap and a portion of the electrode layers. The sealing layer covers the mask layer and the gap.
Abstract translation: 提供了一种过电压保护装置和用于制造过电压保护装置的方法。 过电压保护装置包括基板，一对电极层，掩模层和密封层。 电极层设置在基板上，并且在电极层之间形成间隙。 掩模层设置在间隙和电极层的一部分之上。 密封层覆盖掩模层和间隙。
-
Patent Agency Ranking
公开(公告)号：US20110058295A1
公开(公告)日：2011-03-10
申请号：US12875752
申请日：2010-09-03
Applicant: Chung-Hsiung Wang , Hung-Ming Lin , Lang-Yi Chiang , Wen-Shiang Luo , Kuo-Shu Chen
Inventor： Chung-Hsiung Wang , Hung-Ming Lin , Lang-Yi Chiang , Wen-Shiang Luo , Kuo-Shu Chen
IPC: H02H3/08
CPC classification number: H02H5/00 , H01H69/022 , H01H85/0047 , H01H85/0065 , H01H85/0411 , H01H85/046 , H01H85/048 , H01H85/11 , H01H2085/466
Abstract: A protective device including a substrate, a conductive section and a first auxiliary medium is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The first auxiliary medium is disposed between the metal element and the substrate, wherein the first auxiliary medium has a melting point lower than that of the metal element. The first auxiliary medium facilitates breaking of the metal element upon melting.
Abstract translation: 提供了包括基板，导电部分和第一辅助介质的保护装置。 导电部分由衬底支撑，其中导电部分包括电连接在第一和第二电极之间的金属元件。 金属元件用作熔点低于第一和第二电极的熔点的牺牲结构。 第一辅助介质设置在金属元件和基板之间，其中第一辅助介质的熔点低于金属元件的熔点。 第一辅助介质有助于熔化时金属元件的断裂。
-
公开(公告)号：US08472158B2
公开(公告)日：2013-06-25
申请号：US12875752
申请日：2010-09-03
Applicant: Chung-Hsiung Wang , Hung-Ming Lin , Lang-Yi Chiang , Wen-Shiang Luo , Kuo-Shu Chen
Inventor： Chung-Hsiung Wang , Hung-Ming Lin , Lang-Yi Chiang , Wen-Shiang Luo , Kuo-Shu Chen
IPC: H02H5/00
CPC classification number: H02H5/00 , H01H69/022 , H01H85/0047 , H01H85/0065 , H01H85/0411 , H01H85/046 , H01H85/048 , H01H85/11 , H01H2085/466
Abstract: A protective device including a substrate, a conductive section and a first auxiliary medium is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The first auxiliary medium is disposed between the metal element and the substrate, wherein the first auxiliary medium has a melting point lower than that of the metal element. The first auxiliary medium facilitates breaking of the metal element upon melting.
Abstract translation: 提供了包括基板，导电部分和第一辅助介质的保护装置。 导电部分由衬底支撑，其中导电部分包括电连接在第一和第二电极之间的金属元件。 金属元件用作熔点低于第一和第二电极的熔点的牺牲结构。 第一辅助介质设置在金属元件和基板之间，其中第一辅助介质的熔点低于金属元件的熔点。 第一辅助介质有助于熔化时金属元件的断裂。
-
公开(公告)号：US20120112871A1
公开(公告)日：2012-05-10
申请号：US13291884
申请日：2011-11-08
Applicant: Kuo-Shu CHEN , Chung-Hsiung WANG
Inventor： Kuo-Shu CHEN , Chung-Hsiung WANG
IPC: H01H85/044
CPC classification number: H01H85/044 , H01H69/02 , H01H69/022 , H01H85/0241 , H01H85/0411 , H01H85/046 , H01H85/055 , H01H85/463
Abstract: A protective device includes a substrate, two first electrodes, a low-melting point metal layer and an assisting layer. The first electrodes are respectively arranged at two opposite sides of the substrate. The low melting point metal layer is arranged over the two first electrodes. The assisting layer is formed on the low melting point metal layer. The liquidus temperature of the assisting layer is below the liquidus temperature of the low melting point metal layer, and the liquidus temperature of the assisting layer is not below a predetermined temperature which is below the maximum working temperature of reflow soldering process by 25 degrees.
Abstract translation: 保护装置包括基板，两个第一电极，低熔点金属层和辅助层。 第一电极分别布置在基板的两个相对侧。 低熔点金属层布置在两个第一电极上。 辅助层形成在低熔点金属层上。 辅助层的液相线温度低于低熔点金属层的液相线温度，辅助层的液相线温度不低于低于回流焊接工艺的最高工作温度25度的预定温度。
-
公开(公告)号：US20110057761A1
公开(公告)日：2011-03-10
申请号：US12875771
申请日：2010-09-03
Applicant: Chung-Hsiung Wang , Hung-Ming Lin , Wen-Shiang Luo , Chun-Tiao Liu , Kuo-Shu Chen
Inventor： Chung-Hsiung Wang , Hung-Ming Lin , Wen-Shiang Luo , Chun-Tiao Liu , Kuo-Shu Chen
IPC: H01H85/48
CPC classification number: H01H85/48 , H01H69/022 , H01H85/0047 , H01H85/0241 , H01H85/0411 , H01H85/046 , H01H85/048 , H01H85/11 , H01H2085/0283 , H01H2085/466
Abstract: A protective device including a substrate, a conductive section and a bridge element is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The bridge element spans across the metal element in a direction across direction of current flow in the metal element, wherein the bridge element facilitates breaking of the metal element upon melting.
Abstract translation: 提供了包括基板，导电部分和桥接元件的保护装置。 导电部分由衬底支撑，其中导电部分包括电连接在第一和第二电极之间的金属元件。 金属元件用作熔点低于第一和第二电极的熔点的牺牲结构。 桥接元件跨过金属元件横跨金属元件中的电流流动方向穿过金属元件，其中桥接元件有助于熔化时金属元件的断裂。
-
公开(公告)号：US08976001B2
公开(公告)日：2015-03-10
申请号：US13291884
申请日：2011-11-08
Applicant: Kuo-Shu Chen , Chung-Hsiung Wang
Inventor： Kuo-Shu Chen , Chung-Hsiung Wang
IPC: H01H85/44 , H01H85/044 , H01H85/055 , H01H85/046 , H01H85/041 , H01H85/02 , H01H85/46 , H01H69/02
CPC classification number: H01H85/044 , H01H69/02 , H01H69/022 , H01H85/0241 , H01H85/0411 , H01H85/046 , H01H85/055 , H01H85/463
Abstract: A protective device includes a substrate, two first electrodes, a low-melting point metal layer and an assisting layer. The first electrodes are respectively arranged at two opposite sides of the substrate. The low melting point metal layer is arranged over the two first electrodes. The assisting layer is formed on the low melting point metal layer. The liquidus temperature of the assisting layer is below the liquidus temperature of the low melting point metal layer, and the liquidus temperature of the assisting layer is not below a predetermined temperature which is below the maximum working temperature of reflow soldering process by 25 degrees.
Abstract translation: 保护装置包括基板，两个第一电极，低熔点金属层和辅助层。 第一电极分别布置在基板的两个相对侧。 低熔点金属层布置在两个第一电极上。 辅助层形成在低熔点金属层上。 辅助层的液相线温度低于低熔点金属层的液相线温度，辅助层的液相线温度不低于低于回流焊接工艺的最高工作温度25度的预定温度。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.013 seconds)
