公开(公告)号：US06642110B2

公开(公告)日：2003-11-04

申请号：US10224561

申请日：2002-08-21

申请人： Sung Mun Jung ,  Sung Bo Sim ,  Kwi Wook Kim

发明人： Sung Mun Jung ,  Sung Bo Sim ,  Kwi Wook Kim

IPC分类号： H01L218247

CPC分类号： H01L29/7883 ,  H01L21/28273 ,  H01L29/42324

摘要： There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration nonvolatile memory device.

公开(公告)号：US06465833B1

公开(公告)日：2002-10-15

申请号：US09474371

申请日：1999-12-29

申请人： Sung Mun Jung ,  Sung Bo Sim ,  Kwi Wook Kim

发明人： Sung Mun Jung ,  Sung Bo Sim ,  Kwi Wook Kim

IPC分类号： H01L2976

CPC分类号： H01L29/7883 ,  H01L21/28273 ,  H01L29/42324

摘要： There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration non-volatile memory device.

摘要翻译： 公开了一种闪存单元及其制造方法，其中在形成在硅衬底上的绝缘膜中形成圆形孔，在孔内形成具有圆柱形状的浮动栅极，并且在该栅极内部形成控制栅极 浮动门。 因此，用作电流源的源和硅衬底可以一体地形成，并且也可以省略形成器件分离膜的工艺，从而可以制造超高集成度的非易失性存储器件。

公开(公告)号：US06274418B1

公开(公告)日：2001-08-14

申请号：US09609159

申请日：2000-06-30

申请人： Sang Soo Kim ,  Sung Mun Jung ,  Kwi Wook Kim

发明人： Sang Soo Kim ,  Sung Mun Jung ,  Kwi Wook Kim

IPC分类号： H01L218238

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/7885

摘要： The present invention relates to a method of manufacturing a flash memory cell. In order to solve a problem that a reliability of a device is degraded according as electron injected into a floating gate leaks to an exterior due to various stimulus, the floating gate of the flash memory cell is formed dividely into a upper layer and a lower layer with respect to a charge barrier layer so that the leakage of the electrons injected into the floating gate can be prevented from external stimulus, thereby improving a reliability of the memory device.

摘要翻译： 本发明涉及一种制造闪存单元的方法。 为了解决由于各种刺激而将电子注入到浮动栅中的器件的可靠性降低到外部的问题，闪速存储单元的浮置栅极分成上层和下层 相对于电荷阻挡层，能够防止注入到浮置栅极中的电子的外部刺激，从而提高存储器件的可靠性。

公开(公告)号：US20090219777A1

公开(公告)日：2009-09-03

申请号：US12467419

申请日：2009-05-18

申请人： Kwi Wook KIM ,  Chang Yeol LEE

发明人： Kwi Wook KIM ,  Chang Yeol LEE

IPC分类号： G11C11/4063 ,  H01L25/16

CPC分类号： H01L25/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed are a multi-chip assembly and a method for driving the same. The multi-chip assembly includes a first chip designed with a first device driven by a first power source and a second chip designed with a second device driven by a second power source. A power applying section applies first power to the first device of the first chip and a power converting section converts the first power to second power upon receiving the first power from the power applying section and applies the second power to the second device of the second chip. It is possible to provide the multi-chip assembly in the form of a package fabricated by stacking chips designed with mutually different devices driven through a single power source.

摘要翻译： 公开了一种多芯片组件及其驱动方法。 多芯片组件包括设计有由第一电源驱动的第一设备的第一芯片和设计有由第二电源驱动的第二设备的第二芯片。 功率施加部将第一功率施加到第一芯片的第一装置，并且功率转换部从接收到来自功率施加部的第一功率将第一功率转换为第二功率，并将第二功率施加到第二芯片的第二装置 。 可以提供通过堆叠设计成通过单个电源驱动的相互不同的器件的芯片制造的封装形式的多芯片组件。