公开(公告)号：US06274418B1

公开(公告)日：2001-08-14

申请号：US09609159

申请日：2000-06-30

申请人： Sang Soo Kim ,  Sung Mun Jung ,  Kwi Wook Kim

发明人： Sang Soo Kim ,  Sung Mun Jung ,  Kwi Wook Kim

IPC分类号： H01L218238

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/7885

摘要： The present invention relates to a method of manufacturing a flash memory cell. In order to solve a problem that a reliability of a device is degraded according as electron injected into a floating gate leaks to an exterior due to various stimulus, the floating gate of the flash memory cell is formed dividely into a upper layer and a lower layer with respect to a charge barrier layer so that the leakage of the electrons injected into the floating gate can be prevented from external stimulus, thereby improving a reliability of the memory device.

摘要翻译： 本发明涉及一种制造闪存单元的方法。 为了解决由于各种刺激而将电子注入到浮动栅中的器件的可靠性降低到外部的问题，闪速存储单元的浮置栅极分成上层和下层 相对于电荷阻挡层，能够防止注入到浮置栅极中的电子的外部刺激，从而提高存储器件的可靠性。

公开(公告)号：US06642110B2

公开(公告)日：2003-11-04

申请号：US10224561

申请日：2002-08-21

申请人： Sung Mun Jung ,  Sung Bo Sim ,  Kwi Wook Kim

发明人： Sung Mun Jung ,  Sung Bo Sim ,  Kwi Wook Kim

IPC分类号： H01L218247

CPC分类号： H01L29/7883 ,  H01L21/28273 ,  H01L29/42324

摘要： There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration nonvolatile memory device.

公开(公告)号：US06465833B1

公开(公告)日：2002-10-15

申请号：US09474371

申请日：1999-12-29

申请人： Sung Mun Jung ,  Sung Bo Sim ,  Kwi Wook Kim

发明人： Sung Mun Jung ,  Sung Bo Sim ,  Kwi Wook Kim

IPC分类号： H01L2976

CPC分类号： H01L29/7883 ,  H01L21/28273 ,  H01L29/42324

摘要： There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration non-volatile memory device.

摘要翻译： 公开了一种闪存单元及其制造方法，其中在形成在硅衬底上的绝缘膜中形成圆形孔，在孔内形成具有圆柱形状的浮动栅极，并且在该栅极内部形成控制栅极 浮动门。 因此，用作电流源的源和硅衬底可以一体地形成，并且也可以省略形成器件分离膜的工艺，从而可以制造超高集成度的非易失性存储器件。