公开(公告)号：US06730978B2

公开(公告)日：2004-05-04

申请号：US10429988

申请日：2003-05-06

申请人： Randall L. Kubena ,  Michael J. Little ,  LeRoy H. Hackett

发明人： Randall L. Kubena ,  Michael J. Little ,  LeRoy H. Hackett

IPC分类号： H01L2714

CPC分类号： B81C1/0015 ,  B81B2201/0292 ,  B81C2203/036 ,  H01H59/0009

摘要： A method of making a micro electromechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

摘要翻译： 制造微机电开关或隧道传感器的方法。 在第一基板或晶片上限定悬臂梁结构和配合结构; 并且在第二衬底或晶片上限定至少一个接触结构和配合结构，所述第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 在至少一个配合结构上提供粘合层，优选共晶粘合层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力，以便在接合或共晶层处在两个配合结构之间发生结合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。

公开(公告)号：US5663095A

公开(公告)日：1997-09-02

申请号：US448903

申请日：1995-05-24

申请人： LeRoy H. Hackett

发明人： LeRoy H. Hackett

IPC分类号： H01L21/48 ,  H01L23/495 ,  H01L23/66 ,  H01L21/44

CPC分类号： H01L23/66 ,  H01L21/4821 ,  H01L23/49524 ,  H01L24/01 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30107

摘要： A micro-dimensional coupling conductor with a shape that is customized for a particular electronic device. A fabrication method is used in which the physical dimensions of the conductor are precisely controlled with photolithographic techniques, resulting in a conductor that is more precisely tuned to the operating frequency of the device. The conductor is fabricated on an SiO.sub.2 substrate using vacuum deposition or electroplating techniques. After fabrication, the conductor is separated from the SiO.sub.2 substrate by dissolving the SiO.sub.2. Alternatively, the conductor may be fabricated on a Teflon.TM. substrate. The use of a Teflon substrate allows a user to remove the conductor from the substrate by applying a small mechanical force to the conductor.

摘要翻译： 具有针对特定电子设备定制的形状的微尺寸耦合导体。 使用制造方法，其中通过光刻技术精确地控制导体的物理尺寸，导致更准确地调谐到器件的工作频率的导体。 使用真空沉积或电镀技术在SiO2衬底上制造导体。 在制造之后，通过溶解SiO 2将导体与SiO 2衬底分离。 或者，导体可以在特氟隆TM基板上制造。 使用特氟龙基板允许使用者通过对导体施加小的机械力来从基板去除导体。

公开(公告)号：US06630367B1

公开(公告)日：2003-10-07

申请号：US09629684

申请日：2000-08-01

申请人： Randall L. Kubena ,  Michael J. Little ,  Leroy H. Hackett

发明人： Randall L. Kubena ,  Michael J. Little ,  Leroy H. Hackett

IPC分类号： H01L2100

CPC分类号： B81C1/0015 ,  B81B2201/0292 ,  B81C2203/036 ,  H01H59/0009

摘要： A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

摘要翻译： 一种制造微机电开关或隧道传感器的方法。 在第一基板或晶片上限定悬臂梁结构和配合结构; 并且在第二衬底或晶片上限定至少一个接触结构和配合结构，所述第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 在至少一个配合结构上提供粘合层，优选共晶粘合层。 第一基板的配合结构移动到与第二基板或晶片的配合结构相对应的关系。 在两个基板之间施加压力，以便在接合或共晶层处在两个配合结构之间发生结合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。

公开(公告)号：US4906552A

公开(公告)日：1990-03-06

申请号：US158427

申请日：1988-02-22

申请人： Catherine M. Ngo ,  Leroy H. Hackett

发明人： Catherine M. Ngo ,  Leroy H. Hackett

IPC分类号： G03F7/09 ,  G03F7/095

CPC分类号： G03F7/091 ,  G03F7/095

摘要： Well-defined metal lines of 0.5 micrometers and less in width are produced on a substrate by photolithography, using a two layer photoresist process. The first resist layer, adjacent the substrate, is poly(methylmethacrylate) from about 0.5 to about 1 micrometer thick, having a sufficient amount of an ultraviolet absorbing dye to prevent positive interference of light reflected from the surface of the substrate during exposure. The second resist layer is a polymer of naphthoquinone diazide, in a thickness of about 0.5 to about 1.1 micrometers. To achieve 0.5 micrometer resolution of the metal line, the total thickness of the two resist layers is about 1.5 micrometers; to achieve less than 0.5 micrometer resolution, the total thickness of the two resist layers is about 1.0 micrometer.

摘要翻译： 使用双层光致抗蚀剂工艺通过光刻法在衬底上产生宽度为0.5微米和更小的良好限定的金属线。 邻近衬底的第一抗蚀剂层是约0.5至约1微米厚的聚（甲基丙烯酸甲酯），具有足够量的紫外线吸收染料，以防止在曝光期间从衬底表面反射的光的正面干扰。 第二抗蚀剂层是萘醌二叠氮化物的聚合物，厚度为约0.5至约1.1微米。 为了实现金属线的0.5微米分辨率，两个抗蚀剂层的总厚度为约1.5微米; 为了实现小于0.5微米的分辨率，两个抗蚀剂层的总厚度为约1.0微米。

公开(公告)号：US6123985A

公开(公告)日：2000-09-26

申请号：US179860

申请日：1998-10-28

申请人： William P. Robinson ,  LeRoy H. Hackett ,  Philip G. Reif

发明人： William P. Robinson ,  LeRoy H. Hackett ,  Philip G. Reif

IPC分类号： G02B26/08 ,  B05D5/06 ,  G02B26/00 ,  G03B21/28

CPC分类号： G02B26/0841

摘要： A membrane-actuated charge controlled mirror (CCM) that exhibits increased deflection range, reduced beam current and improved electrostatic stability is fabricated using a combination of flat panel manufacturing along with traditional MEMS techniques. More specifically, a unique combination of five masking layers is used to fabricate a number of CCMs on a large glass panel. At the completion of the MEMS processing, the glass panel is diced into individual CCMs. Thereafter, the polymer mirror and membrane release layers are simultaneously released through vent holes in the membrane to leave the free-standing CCM.

摘要翻译： 使用平板制造与传统MEMS技术的组合，制造出展现出增加的偏转范围，降低的束电流和改善的静电稳定性的膜致动电荷控制镜（CCM）。 更具体地，使用五个掩蔽层的独特组合来在大玻璃面板上制造多个CCM。 在MEMS加工完成后，将玻璃面板切成单独的CCM。 此后，聚合物镜和隔膜层通过膜中的通气孔同时释放，留下独立的CCM。

公开(公告)号：US6087585A

公开(公告)日：2000-07-11

申请号：US844018

申请日：1997-04-18

申请人： LeRoy H. Hackett

发明人： LeRoy H. Hackett

IPC分类号： H01L21/48 ,  H01L23/495 ,  H01L23/66 ,  H01L23/02

CPC分类号： H01L23/66 ,  H01L21/4821 ,  H01L23/49524 ,  H01L24/01 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30107

摘要： A micro-dimensional coupling conductor with a shape that is customized for a particular electronic device. A fabrication method is used in which the physical dimensions of the conductor are precisely controlled with photolithographic techniques, resulting in a conductor that is more precisely tuned to the operating frequency of the device. The conductor is fabricated on an SiO.sub.2 substrate using vacuum deposition techniques. After fabrication, the conductor is separated from the SiO.sub.2 substrate by dissolving the SiO.sub.2. Alternatively, the conductor may be fabricated on a Teflon.TM. substrate. The use of a Teflon substrate allows a user to remove the conductor from the substrate by applying a small mechanical force to the conductor.

摘要翻译： 具有针对特定电子设备定制的形状的微尺寸耦合导体。 使用制造方法，其中通过光刻技术精确地控制导体的物理尺寸，导致更准确地调谐到器件的工作频率的导体。 使用真空沉积技术在SiO2衬底上制造导体。 在制造之后，通过溶解SiO 2将导体与SiO 2衬底分离。 或者，导体可以在特氟隆TM基板上制造。 使用特氟龙基板允许使用者通过对导体施加小的机械力来从基板去除导体。