公开(公告)号：US20060254498A1

公开(公告)日：2006-11-16

申请号：US11487669

申请日：2006-07-17

申请人： Martin Weber ,  Wilfried von Ammon ,  Herbert Schmidt ,  Janis Virbulis ,  Yuri Gelfgat ,  Leonid Gorbunov

发明人： Martin Weber ,  Wilfried von Ammon ,  Herbert Schmidt ,  Janis Virbulis ,  Yuri Gelfgat ,  Leonid Gorbunov

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10S117/917 ,  Y10T117/1068

摘要： A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.

摘要翻译： 在单锭长度超过总锭长度的10％以上的硅单晶具有均匀的缺陷图像和窄的径向掺杂剂和氧的变化。 根据Czochralski方法的方法涉及在固化界面的偏离旋转对称性的区域中引起熔体中的温度分布。

公开(公告)号：US07335256B2

公开(公告)日：2008-02-26

申请号：US11487669

申请日：2006-07-17

申请人： Martin Weber ,  Wilfried von Ammon ,  Herbert Schmidt ,  Janis Virbulis ,  Yuri Gelfgat ,  Leonid Gorbunov

发明人： Martin Weber ,  Wilfried von Ammon ,  Herbert Schmidt ,  Janis Virbulis ,  Yuri Gelfgat ,  Leonid Gorbunov

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10S117/917 ,  Y10T117/1068

摘要： A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.

摘要翻译： 在单锭长度超过总锭长度的10％以上的硅单晶具有均匀的缺陷图像和窄的径向掺杂剂和氧的变化。 根据Czochralski方法的方法涉及在固化界面的偏离旋转对称性的区域中引起熔体中的温度分布。

公开(公告)号：US06001170A

公开(公告)日：1999-12-14

申请号：US695315

申请日：1996-08-09

申请人： Erich Tomzig ,  Werner Zulehner ,  Wilfried Von Ammon ,  Yu M Gelfgat ,  Leonid Gorbunov

发明人： Erich Tomzig ,  Werner Zulehner ,  Wilfried Von Ammon ,  Yu M Gelfgat ,  Leonid Gorbunov

IPC分类号： C30B15/04 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  H01L21/208 ,  C30B15/22

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1032

摘要： A process for the growth of a single crystal from semiconductor material by the Czochralski method, in which the melt is subjected to the influence of a magnetic field during the crystal growth and the magnetic field is generated by superposing a static magnetic field and an alternating magnetic field. An apparatus for carrying out the process, has a magnetic means which comprises two coils which are arranged around a crucible, one coil generating a static magnetic field and the other coil generating an alternating magnetic field.

摘要翻译： 通过切克劳斯基法从半导体材料生长单晶的方法，其中熔体在晶体生长期间受到磁场的影响，并且磁场通过叠加静态磁场和交变磁场而产生 领域。 用于执行该过程的装置具有磁性装置，其包括布置在坩埚周围的两个线圈，产生静磁场的一个线圈和产生交变磁场的另一个线圈。