公开(公告)号：US07166542B2

公开(公告)日：2007-01-23

申请号：US10707112

申请日：2003-11-21

申请人： Ming-Hung Lo ,  Liang-Pin Chou ,  Chun-Ming Wang ,  Li-Fu Chen

发明人： Ming-Hung Lo ,  Liang-Pin Chou ,  Chun-Ming Wang ,  Li-Fu Chen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76834 ,  H01L21/76832

摘要： A method of fabricating a passivation layer is provided. A substrate with a plurality of device structures and at least an interconnect thereon is provided. A patterned metallic layer is formed over the interconnection layer. A plasma-enhanced chemical vapor deposition process is performed to form a first passivation over the metallic layer such that the processing pressure is higher (and/or the processing power is lower) than the pressure (the power) used in prior art. A moisture impermeable second passivation is formed over the first passivation layer. With the first passivation formed in a higher processing pressure (and/or lower processing power), damages to metallic layers or devices due to plasma bombardment is minimized.

摘要翻译： 提供一种制造钝化层的方法。 提供具有多个器件结构并且至少在其上的互连的衬底。 在互连层上形成图案化的金属层。 执行等离子体增强化学气相沉积工艺以在金属层上形成第一钝化，使得处理压力比现有技术中使用的压力（功率）更高（和/或处理能力较低）。 在第一钝化层上形成不透水的第二钝化。 由于在较高的处理压力（和/或较低的处理能力）下形成的第一钝化，由于等离子体轰击而对金属层或器件造成的损害最小化。

公开(公告)号：US20090017604A1

公开(公告)日：2009-01-15

申请号：US11933742

申请日：2007-11-01

申请人： Mao-Ying WANG ,  Jer-Chyi WANG ,  Wei-Hui HSU ,  Liang-Pin CHOU ,  Kuo-Hui SU ,  Chang-Rong WU ,  Chao-Sung LAI

发明人： Mao-Ying WANG ,  Jer-Chyi WANG ,  Wei-Hui HSU ,  Liang-Pin CHOU ,  Kuo-Hui SU ,  Chang-Rong WU ,  Chao-Sung LAI

IPC分类号： H01L21/425

CPC分类号： H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/3105 ,  H01L21/318 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device comprises providing a substrate. Under an atmosphere containing a fluoride nitride compound, a plasma treatment process is performed to simultaneously fluorinate and nitrify a surface of the substrate. Thereafter, a dielectric layer is formed on the substrate.

摘要翻译： 提供一种制造半导体器件的方法。 制造半导体器件的方法包括提供衬底。 在含有氟化氮化合物的气氛下，进行等离子体处理工艺以同时氟化和硝化基板的表面。 此后，在基板上形成电介质层。

公开(公告)号：US20050074964A1

公开(公告)日：2005-04-07

申请号：US10707112

申请日：2003-11-21

申请人： Ming-Hung Lo ,  Liang-Pin Chou ,  Chun-Ming Wang ,  Li-Fu Chen

发明人： Ming-Hung Lo ,  Liang-Pin Chou ,  Chun-Ming Wang ,  Li-Fu Chen

IPC分类号： H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76834 ,  H01L21/76832

摘要： A method of fabricating a passivation layer is provided. A substrate with a plurality of device structures and at least an interconnect thereon is provided. A patterned metallic layer is formed over the interconnection layer. A plasma-enhanced chemical vapor deposition process is performed to form a first passivation over the metallic layer such that the processing pressure is higher (and/or the processing power is lower) than the pressure (the power) used in prior art. A moisture impermeable second passivation is formed over the first passivation layer. With the first passivation formed in a higher processing pressure (and/or lower processing power), damages to metallic layers or devices due to plasma bombardment is minimized.

摘要翻译： 提供一种制造钝化层的方法。 提供具有多个器件结构并且至少在其上的互连的衬底。 在互连层上形成图案化的金属层。 执行等离子体增强化学气相沉积工艺以在金属层上形成第一钝化，使得处理压力比现有技术中使用的压力（功率）更高（和/或处理能力较低）。 在第一钝化层上形成不透水的第二钝化。 由于在较高的处理压力（和/或较低的处理能力）下形成的第一钝化，由于等离子体轰击而对金属层或器件造成的损害最小化。