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    Apparatus of preventing ESD and EMP using semiconductor having a wider band gap and method thereof
    1.
    发明授权
    Apparatus of preventing ESD and EMP using semiconductor having a wider band gap and method thereof 有权

    公开(公告)号：US11303117B2

    公开(公告)日：2022-04-12

    申请号：US16931661

    申请日：2020-07-17

    申请人： Liann-Be Chang

    发明人： Liann-Be Chang

    IPC分类号： H02H9/04 ,  H03K21/02

    摘要： An apparatus of preventing ESD and EMP coupled between a signal input and a signal output is provided with a first diode of forward bias including a positive terminal and a negative terminal connected to the signal input and ground respectively; and a first diode of reverse bias including a negative terminal and a positive terminal connected to the signal input and the ground respectively. The semiconductor is a diode including a p-type semiconductor region made of semiconductor material having a predetermined band gap and an n-type semiconductor region made of semiconductor material having a predetermined band gap. The predetermined band gap is greater than 3 eV. The diode operates in forward bias to discharge current generated by ESD and/or EMP. A method of preventing ESD and EMP is also provided.

    Hollow wire and method for making the same
    2.
    发明申请
    Hollow wire and method for making the same 失效
    空心丝及其制作方法

    公开(公告)号：US20060076157A1

    公开(公告)日：2006-04-13

    申请号：US10963450

    申请日：2004-10-13

    申请人： Liann-Be Chang

    发明人： Liann-Be Chang

    IPC分类号： H05K1/09

    CPC分类号： H01L21/76838 ,  H01L21/7682 ,  H01L23/5221 ,  H01L23/5283 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A hollow wire for enhancing the wires used in Liquid Crystal Display and a method for making the hollow wire which includes hollow portions in the wires so as to increase the cross sectional area and reduce the resistance. Isolation layer with low dielectric constant is filled in the hollow portions so as to reduce the electric capacities and maintain the operation efficiency. The isolation layer can be filled in the perpendicularly crossing area between the information lines and gate matrixes to reduce the electric capacities and maintain the operation efficiency.

    摘要翻译： 一种用于增强液晶显示器中使用的电线的中空线，以及一种用于制造中空线的方法，该中空线在电线中包括中空部分，以增加横截面积并降低电阻。 在中空部填充具有低介电常数的绝缘层，以便降低电容并保持操作效率。 隔离层可以填充在信息线和栅极矩阵之间的垂直交叉区域，以减少电容并保持运行效率。

    III-V semiconductor structure and its producing method
    3.
    发明授权
    III-V semiconductor structure and its producing method 有权
    III-V半导体结构及其制备方法

    公开(公告)号：US06200885B1

    公开(公告)日：2001-03-13

    申请号：US09246334

    申请日：1999-02-09

    申请人： Hung-Tsung Wang ,  Ming-Jyh Hwu ,  Yao-Hwa Wu ,  Liann-Be Chang

    发明人： Hung-Tsung Wang ,  Ming-Jyh Hwu ,  Yao-Hwa Wu ,  Liann-Be Chang

    IPC分类号： H01L2128

    CPC分类号： H01L21/28581 ,  H01L29/475 ,  H01L29/872

    摘要： A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a sulfuric acid solution, (c) forming a Schottky barrier layer on the III-V substrate, and (d) forming a metal layer on the second barrier layer. The Ill-V semiconductor structure includes a III-V substrate, a Schottky barrier layer, and a metal layer. The Schottky barrier layer is made of Al2(SO4)3 and In2(SO4)3.

    摘要翻译： 提供III-V族半导体结构及其制造方法。 用于形成具有肖特基势垒层的III-V族半导体结构的方法包括以下步骤：（a）提供III-V衬底，（b）用硫酸溶液处理第一阻挡层，（c）形成肖特基势垒 层，并且（d）在第二阻挡层上形成金属层。 III-V族半导体结构包括III-V衬底，肖特基势垒层和金属层。 肖特基势垒层由Al2（SO4）3和In2（SO4）3制成。

    APPARATUS OF PREVENTING ESD AND EMP USING SEMICONDUCTOR HAVING A WIDER BAND GAP AND METHOD THEREOF
    4.
    发明申请
    APPARATUS OF PREVENTING ESD AND EMP USING SEMICONDUCTOR HAVING A WIDER BAND GAP AND METHOD THEREOF 有权

    公开(公告)号：US20210036511A1

    公开(公告)日：2021-02-04

    申请号：US16931661

    申请日：2020-07-17

    申请人： Liann-Be Chang

    发明人： Liann-Be Chang

    IPC分类号： H02H9/04 ,  H03K21/02

    摘要： An apparatus of preventing ESD and EMP coupled between a signal input and a signal output is provided with a first diode of forward bias including a positive terminal and a negative terminal connected to the signal input and ground respectively; and a first diode of reverse bias including a negative terminal and a positive terminal connected to the signal input and the ground respectively. The semiconductor is a diode including a p-type semiconductor region made of semiconductor material having a predetermined band gap and an n-type semiconductor region made of semiconductor material having a predetermined band gap. The predetermined band gap is greater than 3 eV. The diode operates in forward bias to discharge current generated by ESD and/or EMP. A method of preventing ESD and EMP is also provided.

    Cascade electromagnetic pulse protection circuit for high frequency application
    5.
    发明授权
    Cascade electromagnetic pulse protection circuit for high frequency application 有权
    级联电磁脉冲保护电路，适用于高频应用

    公开(公告)号：US08605404B2

    公开(公告)日：2013-12-10

    申请号：US13155455

    申请日：2011-06-08

    申请人： Liann-Be Chang ,  Jiun Yuh Chen

    发明人： Liann-Be Chang ,  Jiun Yuh Chen

    IPC分类号： H02H9/00

    CPC分类号： H02H5/005

    摘要： The present invention discloses a cascade EMP protection circuit, which comprises an LEMP protection circuit and a fast-response protection circuit, wherein a symmetric capacitive varactor element is cascaded to the path of signal transmission. Thereby, the present invention can protect electronic devices against LEMP or EMP released by an electronic weapon (NEMP, HEMP, or PEMP).

    摘要翻译： 本发明公开了一种级联EMP保护电路，其包括LEMP保护电路和快速响应保护电路，其中对称电容变容元件级联到信号传输路径。 由此，本发明能够保护电子装置免受由电子武器（NEMP，HEMP或PEMP）释放的LEMP或EMP。

    Electromagnetic pulse protection circuit having wave filtering capability
    6.
    发明授权
    Electromagnetic pulse protection circuit having wave filtering capability 有权
    电磁脉冲保护电路具有滤波能力

    公开(公告)号：US08331073B2

    公开(公告)日：2012-12-11

    申请号：US12407899

    申请日：2009-03-20

    申请人： Liann-Be Chang

    发明人： Liann-Be Chang

    IPC分类号： H02H3/22

    CPC分类号： H01P1/30 ,  H01P1/20 ,  H02H9/005 ,  H02H9/04

    摘要： An electromagnetic pulse protection circuit having wave filtering functions, composed of an inductor free slow response protection circuit and a fast response protection circuit, and a filter is series-connected on a signal transmission route, and is utilized to provide impedance in effectively preventing electromagnetic pulses caused by lightning (LS) or other electronic weapon (NEMP, HEMP, PEMP) interferences. In addition, it is capable of suppressing electromagnetic pulses at specific frequencies, thus, raising the capability of electronic elements in resisting against electromagnetic pulses. Furthermore, said filter is made of high-temperature-super-conduction (HTSC) material, so that when said HTSC material of said filter is subject to a sudden infusion or invasion of said electromagnetic pulses, it is switched to a high impedance state in a very short period of time in effectively restricting currents passing through said filter, hereby avoiding the damages of a communication system.

    摘要翻译： 具有无电感缓慢响应保护电路和快速响应保护电路构成的波形滤波功能的电磁脉冲保护电路和信号传输路径串联连接的滤波器，用于提供有效防止电磁脉冲的阻抗 由雷电（LS）或其他电子武器（NEMP，HEMP，PEMP）干扰引起的。 此外，它能够抑制特定频率的电磁脉冲，从而提高电子元件抗电磁脉冲的能力。 此外，所述过滤器由高温超导（HTSC）材料制成，使得当所述过滤器的所述HTSC材料经受突然输入或侵入所述电磁脉冲时，其被切换到高阻抗状态 在很短的时间内有效地限制通过所述过滤器的电流，从而避免通信系统的损坏。

    Electro-magnetic pulse protection circuit with a counter
    7.
    发明授权
    Electro-magnetic pulse protection circuit with a counter 有权
    电磁脉冲保护电路带有计数器

    公开(公告)号：US07990665B2

    公开(公告)日：2011-08-02

    申请号：US12139554

    申请日：2008-06-16

    申请人： Liann-Be Chang ,  Ming-Jer Jeng ,  Yu-Lin Lee

    发明人： Liann-Be Chang ,  Ming-Jer Jeng ,  Yu-Lin Lee

    IPC分类号： H02H9/00

    CPC分类号： H02H9/042

    摘要： An EMP protection circuit with a counter has a surge protection circuit capable of suppressing EMP, and also use an extra counting circuit for sensing light emission or variation of magnetic force of the surge protection circuit to count the action times of the surge protection circuit, thereby warning that the surge protection circuit has reached its time-limit of use and has to be replaced. In this way, various kinds of electronic products can be more perfectly protected to avoid higher loss.

    摘要翻译： 具有计数器的EMP保护电路具有能够抑制EMP的浪涌保护电路，并且还使用用于感测浪涌保护电路的发光或磁力变化的额外计数电路来计数浪涌保护电路的动作时间，从而 警告浪涌保护电路已达到使用期限，必须更换。 以这种方式，可以更好地保护各种电子产品以避免更高的损失。

    Method of manufacturing an LED
    9.
    发明授权
    Method of manufacturing an LED 有权
    制造LED的方法

    公开(公告)号：US07569432B1

    公开(公告)日：2009-08-04

    申请号：US12013687

    申请日：2008-01-14

    申请人： Liann-Be Chang ,  Shiue-Ching Chiuan ,  Kuo-Ling Chiang

    发明人： Liann-Be Chang ,  Shiue-Ching Chiuan ,  Kuo-Ling Chiang

    IPC分类号： H01L21/20

    CPC分类号： H01L33/405 ,  H01L33/32

    摘要： A method of manufacturing an LED of high reflectivity includes forming a substrate; depositing an n-type GaN layer on the substrate; depositing an active layer on a first portion of the n-type GaN layer; attaching an n-type metal electrode to a second portion of the n-type GaN layer; depositing a p-type GaN layer on the active layer; forming a metal reflector on the p-type GaN layer; attaching a p-type metal electrode to the metal reflector; and attaching the p-type metal electrode and the n-type metal electrode to an epitaxial layer respectively. The metal reflector includes a transparent layer, an Ag layer, and an Au layer. The transparent layer and the Ag layer are formed by annealing in a furnace, and the Au layer is subsequently coated on the Ag layer.

    摘要翻译： 制造高反射率的LED的方法包括：形成基板; 在衬底上沉积n型GaN层; 在n型GaN层的第一部分上沉积有源层; 将n型金属电极附接到所述n型GaN层的第二部分; 在有源层上沉积p型GaN层; 在p型GaN层上形成金属反射体; 将p型金属电极附接到金属反射器; 并且将p型金属电极和n型金属电极分别附着到外延层。 金属反射器包括透明层，Ag层和Au层。 通过在炉中退火形成透明层和Ag层，随后在Ag层上涂覆Au层。