Transient protection circuit using common drain field effect transistors
    1.
    发明授权
    Transient protection circuit using common drain field effect transistors 失效
    瞬态保护电路采用公共漏极场效应晶体管

    公开(公告)号:US5198957A

    公开(公告)日:1993-03-30

    申请号:US547882

    申请日:1990-07-02

    IPC分类号: H02H3/20 H04M3/18

    CPC分类号: H02H3/20 H04M3/18

    摘要: A transient protection circuit provides protection from high voltage transients appearing along a transmission line by sensing a predetermined threshold of the voltage developed thereon and opening the conduction path through first and second switching circuits in the transmission line. The switching circuits are implemented with first and second serially coupled transistors sharing a common drain and enabled by a control signal during normal operation. The first and second transistors each have a diode oriented to conduct from the source to the drain for bi-directional operation. During high voltage transient conditions, a sensing circuit detect a predetermined threshold of the potential on the transmission line and disables one of the first and second transistors which opens the conduction path through the first and second switching circuits thereby suppressing the surge currents flowing therethrough.

    摘要翻译: 瞬态保护电路通过感测在其上产生的电压的预定阈值并且通过传输线中的第一和第二开关电路打开导通路径来提供沿着传输线出现的高电压瞬变的保护。 开关电路由在正常操作期间共享公共漏极并由控制信号使能的第一和第二串联耦合晶体管实现。 第一和第二晶体管各自具有二极管,其定向为从源极到漏极导通以进行双向操作。 在高电压瞬态条件期间,感测电路检测传输线上的电位的预定阈值,并且禁用通过第一和第二开关电路打开导电路径的第一和第二晶体管中的一个,从而抑制流过其中的浪涌电流。