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公开(公告)号：US5198701A
公开(公告)日：1993-03-30
申请号：US632793
申请日：1990-12-24
摘要： A current source with adjustable temperature compensation in which the level of current supplied to a load is adjusted to compensate for the load's inherent change in performance with changes in temperature. The current source allows selection of the appropriate temperature compensating characteristic and operating current solely by altering internal component values.
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公开(公告)号：US5424897A
公开(公告)日：1995-06-13
申请号：US43948
申请日：1993-04-05
申请人： David F. Mietus , Robert B. Davies
发明人： David F. Mietus , Robert B. Davies
IPC分类号： H03K17/08 , H03K17/082 , H03K17/56
CPC分类号： H03K17/0826 , H03K2017/0806
摘要： A voltage driven control die (20) for use with a power device (22) has been provided. The voltage driven control die includes an under voltage lock-out circuit (46) which inhibits drive to the power device until the input voltage exceeds a predetermined threshold voltage. Moreover, the control die includes a noise immunity enhancement circuit (56) for providing an excess reverse bias across an output SCR (58) for preventing false triggering of the output SCR. The control die also includes circuitry (40, 44) for detecting an over temperature or an over current condition within the power device.
摘要翻译： 已经提供了一种与功率器件（22）一起使用的电压驱动控制管芯（20）。 电压驱动控制管芯包括欠压锁定电路（46），其阻止对功率器件的驱动，直到输入电压超过预定阈值电压。 此外，控制管芯包括用于在输出SCR（58）上提供过大的反向偏置以防止输出SCR的错误触发的抗噪声增强电路（56）。 控制管芯还包括用于检测功率器件内的过温或过电流状态的电路（40,44）。
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3.发明授权High power semiconductor device with integral on-state voltage detection structure 失效具有集成导通状态电压检测结构的大功率半导体器件
公开(公告)号：US5289028A
公开(公告)日：1994-02-22
申请号：US787166
申请日：1991-11-04
申请人： Lowell Clark , Robert B. Davies , David F. Mietus
发明人： Lowell Clark , Robert B. Davies , David F. Mietus
IPC分类号： H01L21/8234 , H01L27/02 , H01L27/04 , H01L27/06 , H01L29/78 , H01L23/62 , H01L23/58 , H01L29/74 , H01L29/90
CPC分类号： H01L29/7815 , H01L27/0251 , H01L27/0255 , H01L29/7803 , H01L29/7804 , H01L2924/0002
摘要： A semiconductor device having a power switch (12) and a saturation detection diode (13) formed in an upper surface of a semiconductor drift region (11) is provided. The saturation detector diode (13) and the power switch (12) are electrically coupled by the drift region (11). An external signal applied to the detector diode (13) forward biases the detector diode (13) when the drift region (11) potential is below a predetermined voltage and the detector diode (13) becomes reverse biased when the drift region (11) potential is greater than the predetermined voltage.
摘要翻译： 提供了一种具有形成在半导体漂移区（11）的上表面中的功率开关（12）和饱和检测二极管（13）的半导体器件。 饱和检测器二极管（13）和功率开关（12）由漂移区域（11）电耦合。 当漂移区域（11）电位低于预定电压时，施加到检测器二极管（13）的外部信号向前偏置检测器二极管（13），并且当漂移区域（11）电位 大于预定电压。
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4.发明授权
公开(公告)号：US5029295A
公开(公告)日：1991-07-02
申请号：US546636
申请日：1990-07-02
CPC分类号： G05F3/30
摘要： A voltage reference circuit is provided for developing an output voltage operating independent of temperature and power supply variation. A current reference circit provides a current reference signal operating independent of power supply variation and having a predetermined temperature coefficient and flowing through a first transistor and a first resistor each having opposite temperature coefficients. The output voltage is established as the sum of the base-emitter junction potential of the first transistor and the potential developed across the first resistor. The temperature coefficient of the potential developed across the first resistor substantially cancels the temperature coefficient across the base-emitter junction of the first transistor thereby providing the output voltage operating independent of temperature and power supply variation.
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5.发明授权
公开(公告)号：US5418674A
公开(公告)日：1995-05-23
申请号：US95573
申请日：1993-07-19
申请人： Robert B. Davies , David F. Mietus
发明人： Robert B. Davies , David F. Mietus
IPC分类号： H03K17/042 , H03K17/08 , H03K17/0812 , H03K17/082 , H03K17/16 , H03K17/18 , H03K17/30 , H02H9/00
CPC分类号： H03K17/04213 , H03K17/08126 , H03K17/0826 , H03K17/16 , H03K17/18 , H03K17/30 , H03K2017/0806
摘要： A multi-leaded protected power device having a boot-strap input has been provided. The power device includes a current controlled, boot-strap driven control die (20) for use with a power transistor (25). The control die includes an under voltage lock-out circuit (46) which inhibits drive to the power transistor until the input signals exceed a predetermined threshold level. Moreover, the control die includes a noise immunity enhancement circuit (56) for providing an excess reverse bias across an output SCR (58) for preventing false triggering of the output SCR. The power device further includes a status output lead (204) for indicating when a voltage occurring across the power transistor has exceeded a predetermined threshold, and a current output lead (220) for providing a current that is proportional to a current flowing through the power transistor.
摘要翻译： 已经提供了具有引导输入的多引线受保护的功率器件。 功率器件包括用于与功率晶体管（25）一起使用的电流控制的引导带驱动的控制管芯（20）。 控制管芯包括欠压锁定电路（46），其阻止对功率晶体管的驱动，直到输入信号超过预定阈值电平。 此外，控制管芯包括用于在输出SCR（58）上提供过大的反向偏置以防止输出SCR的错误触发的抗噪声增强电路（56）。 所述功率器件还包括状态输出引线（204），用于指示所述功率晶体管两端出现的电压何时已经超过预定阈值;以及电流输出引线（220），用于提供与流过所述功率的电流成比例的电流 晶体管。
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公开(公告)号：US5285346A
公开(公告)日：1994-02-08
申请号：US806197
申请日：1991-12-13
IPC分类号： F02P3/055 , H03K17/08 , H03K17/0812 , H03K17/082 , H03K17/687 , H01L29/78
CPC分类号： H03K17/0822 , H03K17/08122 , H03K17/6877 , F02P3/0552 , H03K2017/0806
摘要： A control circuit for protecting a power device has been provided. The control circuit has a thermal shutdown circuit for activating a first SCR when the temperature of the control circuit exceeds a predetermined temperature. Additionally, the control circuit has a DSAT detection circuit for activating the first SCR in response to an external signal. The first SCR is coupled across an input terminal and the common terminal of the control circuit. When the first SCR latches, it functions to subsequently latch a second SCR that is coupled across the output and common terminals. The second SCR functions to rapidly discharge the voltage appearing across the output and common terminals.Additionally, the control circuit includes an input level sensitive circuit which may be utilized to deactivate various circuitry depending upon the current level of an input signal supplied to the control circuit.
摘要翻译： 已经提供了一种用于保护功率器件的控制电路。 当控制电路的温度超过预定温度时，控制电路具有用于激活第一SCR的热关断电路。 此外，控制电路具有用于响应于外部信号来激活第一SCR的DSAT检测电路。 第一SCR耦合在输入端和控制电路的公共端之间。 当第一SCR锁存时，其功能是随后锁存耦合在输出端和公共端子之间的第二SCR。 第二个SCR用于快速放电出现在输出端和公共端子两端的电压。 此外，控制电路包括输入电平敏感电路，其可以用于根据提供给控制电路的输入信号的当前电平来去激活各种电路。
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公开(公告)号：US5235215A
公开(公告)日：1993-08-10
申请号：US806198
申请日：1991-12-13
CPC分类号： H02H9/041
摘要： A memory circuit which includes a memory SCR and an output SCR is provided. The memory SCR is coupled between the input terminal and the common terminal of the memory circuit wherein the input terminal is the control terminal of the output SCR and the output SCR is coupled across the output terminal and the common terminal of the memory circuit. When the memory SCR latches, it functions to subsequently latch the output SCR. Because the output SCR has a greater forward operating voltage than the memory SCR and by providing a current path from the output terminal to the memory SCR, the memory SCR remains latched during the transition period of when the output SCR goes from a latched state to an unlatched state.
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公开(公告)号：US5170312A
公开(公告)日：1992-12-08
申请号：US787165
申请日：1991-11-04
IPC分类号： H01L23/58 , H01L27/02 , H03K17/082
CPC分类号： H03K17/0822 , H01L24/49 , H01L27/0248 , H01L2224/48091 , H01L2224/4813 , H01L2224/49111 , H01L2924/00014 , H01L2924/01005 , H01L2924/01015 , H01L2924/01033 , H01L2924/01082 , H01L2924/1306 , H01L2924/14 , H01L2924/30105
摘要： A method for protecting a semiconductor power die has been provided. The method involves inserting an integrated circuit die between the gate lead of a package containing the semiconductor power die and the actual gate terminal of the semiconductor power die. As a result, any current flowing into the gate lead of the package must pass through the integrated circuit die before entering the semiconductor power die. This allows the integrated circuit die to monitor and control the semiconductor power die.
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公开(公告)号：US07584567B1
公开(公告)日：2009-09-08
申请号：US12110304
申请日：2008-04-26
申请人： Frank DeSomma , Robert B. Davies
发明人： Frank DeSomma , Robert B. Davies
IPC分类号： F41C23/16
CPC分类号： F41G11/003 , F41C23/16
摘要： A hand guard assembly for a firearm including a barrel. The assembly includes a tubular unitary body mounted to surround a portion of the barrel substantially coaxially and in a transversely spaced relationship. The tubular body includes a plurality of air flow openings formed therethrough and at least one of a top rail formed as a unitary portion of the tubular body and extending rearwardly along an upper portion of a receiver of the firearm, side accessory rails formed as a unitary portion of the tubular body and on opposed sides of the tubular body, and a bottom accessory rail formed as a unitary portion of the tubular body and on a bottom surface of the tubular body. In the preferred method of fabricating the assembly, the body and any include accessory rails are extruded.
摘要翻译： 用于包括枪管的枪支的护手组件。 该组件包括一个管状整体，其安装成围绕筒的一部分基本同轴并以横向间隔的关系。 管状体包括多个通过其形成的空气流动开口，以及形成为管状体的整体部分的顶部轨道中的至少一个，并且沿着枪械的接收器的上部向后延伸，侧部辅助导轨形成为整体 管状体的一部分和管状体的相对侧，以及形成为管状体的整体部分和管状体的底表面的底部辅助轨道。 在制造组件的优选方法中，主体和任何包括的附件轨道被挤压。
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公开(公告)号：US20080265313A1
公开(公告)日：2008-10-30
申请号：US12131295
申请日：2008-06-02
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/26586 , H01L21/2815 , H01L29/0878 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/66719 , H01L29/66727
摘要： In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation.
摘要翻译： 在一个实施例中，半导体器件形成在半导体材料体中。 半导体器件包括在操作期间电流离开的沟道区域的一部分附近的局部化掺杂区域。
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