公开(公告)号：US07449738B2

公开(公告)日：2008-11-11

申请号：US10977335

申请日：2004-10-29

申请人： Chang-Beom Eom ,  Kyung-Jin Choi ,  Darrell G. Schlom ,  Long-Qing Chen

发明人： Chang-Beom Eom ,  Kyung-Jin Choi ,  Darrell G. Schlom ,  Long-Qing Chen

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L21/02197 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/31691 ,  H01L29/516

摘要： A strained thin film structure includes a substrate layer formed of a crystalline scandate material having a top surface, and a strained layer of crystalline ferroelectric epitaxially grown with respect to the crystalline substrate layer so as to be in a strained state and at a thickness below which dislocations begin to occur in the crystalline ferroelectric layer. An intermediate layer may be grown between the top surface of the substrate layer and the ferroelectric layer wherein the intermediate layer carries the lattice structure of the underlying substrate layer. The properties of the ferroelectric film are greatly enhanced as compared to the bulk ferroelectric material, and such films are suitable for use in applications including ferroelectric memories.

摘要翻译： 应变薄膜结构包括由具有顶表面的结晶钪酸盐材料形成的衬底层和相对于晶体衬底层外延生长的结晶铁电的应变层，以便处于应变状态，厚度低于此 位错开始发生在结晶铁电层中。 中间层可以在衬底层的顶表面和铁电层之间生长，其中中间层承载下面的衬底层的晶格结构。 与体积铁电体相比，强电介质膜的性质大大提高，这种膜适用于铁电存储器等应用。

公开(公告)号：US20060091434A1

公开(公告)日：2006-05-04

申请号：US10977335

申请日：2004-10-29

申请人： Chang-Beom Eom ,  Kyung-Jin Choi ,  Darrell Schlom ,  Long-Qing Chen

发明人： Chang-Beom Eom ,  Kyung-Jin Choi ,  Darrell Schlom ,  Long-Qing Chen

IPC分类号： H01L29/76

CPC分类号： H01L21/02197 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/31691 ,  H01L29/516

摘要： A strained thin film structure includes a substrate layer formed of a crystalline scandate material having a top surface, and a strained layer of crystalline ferroelectric epitaxially grown with respect to the crystalline substrate layer so as to be in a strained state and at a thickness below which dislocations begin to occur in the crystalline ferroelectric layer. An intermediate layer may be grown between the top surface of the substrate layer and the ferroelectric layer wherein the intermediate layer carries the lattice structure of the underlying substrate layer. The properties of the ferroelectric film are greatly enhanced as compared to the bulk ferroelectric material, and such films are suitable for use in applications including ferroelectric memories.

摘要翻译： 应变薄膜结构包括由具有顶表面的结晶钪酸盐材料形成的衬底层和相对于晶体衬底层外延生长的结晶铁电的应变层，以便处于应变状态，厚度低于此 位错开始发生在结晶铁电层中。 中间层可以在衬底层的顶表面和铁电层之间生长，其中中间层承载下面的衬底层的晶格结构。 与体积铁电体相比，强电介质膜的性质大大提高，这种膜适用于铁电存储器等应用。