公开(公告)号：US20180035958A1

公开(公告)日：2018-02-08

申请号：US15788184

申请日：2017-10-19

申请人： Makoto SHIZUKUISHI

发明人： Makoto SHIZUKUISHI

IPC分类号： A61B6/00 ,  A61B6/03

CPC分类号： A61B6/4435 ,  A61B6/032 ,  A61B6/4028 ,  A61B6/4233 ,  A61B6/4275 ,  A61B6/4417 ,  A61B6/508

摘要： A tomographic imaging system includes a source configured to irradiate an object; a first image sensor including a first semiconductor substrate having a first face upon which a monolithic first pixel array is located; and a gantry configured to hold the first image sensor and rotate the image sensor around the object about a first rotation axis, the first pixel array including a first plurality of pixels configured to receive light that travels through or from the object based on the irradiation, the first plurality of pixels of the first pixel array being arranged in one or more rows and a plurality of columns such that, a total number of the one or more rows is less than a total number of the plurality of columns, and the one or more rows extend in a first direction, the first image sensor being arranged such that an angle between the first direction and a second direction is greater than 45 degrees and equal to or less than 90 degrees, the second direction being a direction parallel to the rotation axis or a direction in which the object moves during analysis of the object by the imaging system.

公开(公告)号：US20140240566A1

公开(公告)日：2014-08-28

申请号：US14186778

申请日：2014-02-21

申请人： Makoto SHIZUKUISHI

发明人： Makoto SHIZUKUISHI

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： H01L27/1469 ,  H01L27/14605 ,  H01L27/14634 ,  H04N5/335

摘要： An image sensor includes a first semiconductor chip having a first surface and a second surface, the first semiconductor chip a including an array of unit pixels configured to capture light corresponding to an image and to generate image signals based on the captured light; and a second semiconductor chip having a first surface and a second surface, the second semiconductor chip including first peripheral circuits configured to control the array of pixels and receive the generated image signals, the first peripheral circuits including a vertical scanning circuit, a horizontal scanning circuit, and a signal read-out circuit, the first semiconductor chip being stacked on the second semiconductor chip, the first semiconductor chip not being smaller than the second semiconductor chip.

摘要翻译： 图像传感器包括具有第一表面和第二表面的第一半导体芯片，第一半导体芯片a包括被配置为捕获与图像相对应的光并且基于所捕获的光产生图像信号的单位像素阵列; 以及具有第一表面和第二表面的第二半导体芯片，所述第二半导体芯片包括被配置为控制所述像素阵列并接收所生成的图像信号的第一外围电路，所述第一外围电路包括垂直扫描电路，水平扫描电路 以及信号读出电路，所述第一半导体芯片堆叠在所述第二半导体芯片上，所述第一半导体芯片不小于所述第二半导体芯片。

公开(公告)号：US07742088B2

公开(公告)日：2010-06-22

申请号：US10715476

申请日：2003-11-19

申请人： Makoto Shizukuishi

发明人： Makoto Shizukuishi

IPC分类号： H04N3/14 ,  H04N9/07

CPC分类号： H04N9/045

摘要： A color solid-state image pickup device includes a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate. The inside of each of photoelectric conversion areas 10 is two-dimensionally partitioned into a plurality of segments R, G1, G2, and B which output a plurality of photoelectric conversion signals of different spectral sensitivities. As a result, occurrence of a false signal and a false color is suppressed, and high-sensitivity, high-resolution image data having superior color reproducibility can be obtained.

摘要翻译： 彩色固态摄像装置包括在半导体衬底的表面上以阵列图案设置的多个光电转换区域。 每个光电转换区域10的内部被二维分割成多个区段R，G1，G2和B，其输出具有不同光谱灵敏度的多个光电转换信号。 结果，抑制了伪信号和伪色的发生，并且可以获得具有优异的色彩再现性的高灵敏度，高分辨率的图像数据。

公开(公告)号：US07557843B2

公开(公告)日：2009-07-07

申请号：US10628237

申请日：2003-07-29

申请人： Makoto Shizukuishi

发明人： Makoto Shizukuishi

IPC分类号： H04N3/14 ,  H04N5/76 ,  G11C8/00 ,  G11C16/04

CPC分类号： H04N5/378 ,  H04N5/3728

摘要： A solid state image pickup device comprises: a semiconductor substrate defining a two-dimensional surface; a number of photoelectric conversion elements disposed in a light receiving area of the semiconductor substrate in a matrix shape and in a plurality of rows and columns; signal processors, each formed for each column of the photoelectric conversion elements, the signal processor at least converting analog image data from the photoelectric conversion elements into digital image data; and a non-volatile memory formed in correspondence with respective photoelectric conversion elements at a succeeding stage of the signal processor, the non-volatile memory recording the digital image data.

摘要翻译： 固态图像拾取装置包括：限定二维表面的半导体衬底; 多个光电转换元件，其设置在矩阵形状和多个行和列中的半导体基板的光接收区域中; 信号处理器，每个光电转换元件的每列形成，所述信号处理器至少将来自所述光电转换元件的模拟图像数据转换为数字图像数据; 以及在信号处理器的后级与各个光电转换元件对应地形成的非易失性存储器，非易失性存储器记录数字图像数据。

公开(公告)号：US07233037B2

公开(公告)日：2007-06-19

申请号：US11159367

申请日：2005-06-23

申请人： Yousuke Nakahashi ,  Hiroaki Takao ,  Makoto Shizukuishi

发明人： Yousuke Nakahashi ,  Hiroaki Takao ,  Makoto Shizukuishi

IPC分类号： H01L31/062

CPC分类号： H01L27/14806 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14812

摘要： A solid-state imaging device including a photoelectric conversion portion and a charge transfer portion equipped with charge transfer electrodes to transfer the charge generated in the photoelectric conversion portion, wherein the charge transfer portion is provided with a charge transfer electrodes having a first electrode including a first layer electric conductive film, and a second electrode having a second layer electric conductive film provided contiguously to the first electrode with an electrode insulating film therebetween, and the first electrode is coated with a silicon oxide film that is the electrode insulating film formed by side wall oxidation in the state that the upside is coated with an antioxidizing film so as to coat the side wall.

摘要翻译： 一种固态成像装置，包括光电转换部分和装有电荷转移电极以转移在光电转换部分中产生的电荷的电荷转移部分，其中电荷转移部分设置有电荷转移电极，该电荷转移电极具有第一电极， 第一层导电膜和第二电极，其具有与第一电极相邻设置的第二层导电膜，其间具有电极绝缘膜，并且第一电极涂覆有作为由侧面形成的电极绝缘膜的氧化硅膜 在上面涂覆有抗氧化膜以涂覆侧壁的状态下的壁氧化。

公开(公告)号：US20060011953A1

公开(公告)日：2006-01-19

申请号：US11159367

申请日：2005-06-23

申请人： Yousuke Nakahashi ,  Hiroaki Takao ,  Makoto Shizukuishi

发明人： Yousuke Nakahashi ,  Hiroaki Takao ,  Makoto Shizukuishi

IPC分类号： H01L31/062

CPC分类号： H01L27/14806 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14812

摘要： A solid-state imaging device including a photoelectric conversion portion and a charge transfer portion equipped with charge transfer electrodes to transfer the charge generated in the photoelectric conversion portion, wherein the charge transfer portion is provided with a charge transfer electrodes having a first electrode including a first layer electric conductive film, and a second electrode having a second layer electric conductive film provided contiguously to the first electrode with an electrode insulating film therebetween, and the first electrode is coated with a silicon oxide film that is the electrode insulating film formed by side wall oxidation in the state that the upside is coated with an antioxidizing film so as to coat the side wall.

摘要翻译： 一种固态成像装置，包括光电转换部分和装有电荷转移电极以转移在光电转换部分中产生的电荷的电荷转移部分，其中电荷转移部分设置有电荷转移电极，该电荷转移电极具有第一电极， 第一层导电膜和第二电极，其具有与第一电极相邻设置的第二层导电膜，其间具有电极绝缘膜，并且第一电极涂覆有作为由侧面形成的电极绝缘膜的氧化硅膜 在上面涂覆有抗氧化膜以涂覆侧壁的状态下的壁氧化。

公开(公告)号：US06781178B2

公开(公告)日：2004-08-24

申请号：US10100069

申请日：2002-03-19

申请人： Makoto Shizukuishi

发明人： Makoto Shizukuishi

IPC分类号： H01L27108

CPC分类号： H01L27/14868 ,  H01L27/14818 ,  H01L27/14843 ,  H04N5/37452

摘要： A solid state image pickup device is provided which performs a new form of image signal reading operation. The image pickup deice comprises a semiconductor substrate and a plurality of pixels that are formed on the semiconductor substrate, with each pixel having a photodetection element, which generates signal charges upon receiving incident light, a first MOS transistor structure, which has a first floating gate that is disposed above the semiconductor substrate and a first control gate that is capacitively coupled to the first floating gate, and a second MOS transistor structure, which has a second floating gate that is disposed above the semiconductor substrate and is electrically connected to the first floating gate and a second control gate that is capacitively coupled to the second floating gate.

摘要翻译： 提供了执行新形式的图像信号读取操作的固态图像拾取装置。 图像拾取器包括半导体衬底和形成在半导体衬底上的多个像素，每个像素具有在接收入射光时产生信号电荷的光电检测元件，第一MOS晶体管结构具有第一浮动栅极 其设置在所述半导体衬底上方，以及电容耦合到所述第一浮置栅极的第一控制栅极和第二MOS晶体管结构，所述第二MOS晶体管结构具有设置在所述半导体衬底上方并与所述第一浮置栅极电连接的第二浮置栅极 栅极和电容耦合到第二浮栅的第二控制栅极。

公开(公告)号：US4866002A

公开(公告)日：1989-09-12

申请号：US171278

申请日：1988-03-21

申请人： Makoto Shizukuishi ,  Hideki Mutoh ,  Ryuji Kondo

发明人： Makoto Shizukuishi ,  Hideki Mutoh ,  Ryuji Kondo

IPC分类号： H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/8238 ,  H01L27/0927 ,  Y10S438/981

摘要： In a complementary insulated-gate field effect transistor including insulated-gate field effect transistors of p-channel and n-channel types, a portion of the insulating material layer to be used to form the n-channel transistor is formed to be thicker than a portion thereof to be used to form the p-channel transistor, and a portion of the electrode material layer to be used to constitute the p-channel transistor is formed to be longer along the channel than a portion thereof to be used to constitute the n-channel transistor. This prevents the threshold voltage in the n-channel and p-channel transistors from scattering widely. Alternatively, the ion peak concentration of the ions implanted in the semiconductor substrate and the insulating material layer is located in the proximity of the boundary between the insulating material layer and the semiconductor substrate in the portion to be used to constitute the n-channel transistor, and is located in the semiconductor substrate apart from the insulating material layer in the portion to be used to constitute the p-channel transistor. This also enables the threshold voltage in the n-channel and p-channel transistors to be precisely controlled in the manufacturing processes.

摘要翻译： 在包括p沟道和n沟道类型的绝缘栅场效应晶体管的互补绝缘栅场效应晶体管中，用于形成n沟道晶体管的绝缘材料层的一部分形成为比 其部分用于形成p沟道晶体管，并且用于构成p沟道晶体管的电极材料层的一部分沿着沟道形成为比用于构成p沟道晶体管的部分更长 通道晶体管。 这防止n沟道和p沟道晶体管中的阈值电压广泛散射。 或者，注入到半导体衬底和绝缘材料层中的离子的离子峰浓度位于用于构成n沟道晶体管的部分中绝缘材料层和半导体衬底之间的边界附近， 并且位于与要用于构成p沟道晶体管的部分中的绝缘材料层之间的半导体衬底中。 这也使得能够在制造工艺中精确地控制n沟道晶体管和p沟道晶体管中的阈值电压。

公开(公告)号：US11457882B2

公开(公告)日：2022-10-04

申请号：US17144710

申请日：2021-01-08

申请人： Makoto Shizukuishi

发明人： Makoto Shizukuishi

IPC分类号： A61B6/00 ,  A61B6/03 ,  A61B6/04 ,  G16H40/67

摘要： A computed tomographic (CT) system includes a gantry having a rotating part including a light source, a light source drive control circuit, a rechargeable battery, and a rotating part interface. The gantry includes a detector, a detector control and signal processing circuit, and an image memory. The rotating part may rotate around a central axis. The CT system includes a gantry table on which the gantry is mounted and which includes a host interface. The CT system includes a motor that may cause the gantry to move within a gantry moving range, and a control unit that may process and display image data obtained from the gantry. The rotating part interface may face the host interface, such that the rotating part and host interfaces are configured to be electrically connected with each other, based on the gantry being at a predetermined position within the gantry moving range.

公开(公告)号：US20200013758A1

公开(公告)日：2020-01-09

申请号：US16574897

申请日：2019-09-18

申请人： Makoto SHIZUKUISHI

发明人： Makoto SHIZUKUISHI

IPC分类号： H01L25/065 ,  H01L23/48 ,  H01L27/146 ,  H01L27/148

摘要： A semiconductor device includes n semiconductor chips stacked via electrical contacting means in the silicon substrate thickness direction, n being an integer larger than 2, a side face of the stacked semiconductor device in the substrate thickness direction being covered by a non-conductive layer. The shape of the side face with respect to a plan view of the stacked semiconductor device may be one of curved, convex, concave or circular.