Abstract:
A vehicle includes a computed tomographic system (CT) including a CT gantry having an inner peripheral, and a subject window in a surface of the vehicle. The subject window is configured to be exposed to an exterior of the vehicle via a side face of the vehicle, such that the subject window is configured to enable a subject to enter or exit from the inner peripheral of the CT gantry in a body axis direction of the CT.
Abstract:
A tomographic imaging system includes a source configured to irradiate an object; a first image sensor including a first semiconductor substrate having a first face upon which a monolithic first pixel array is located; and a gantry configured to hold the first image sensor and rotate the image sensor around the object about a first rotation axis, the first pixel array including a first plurality of pixels configured to receive light that travels through or from the object based on the irradiation, the first plurality of pixels of the first pixel array being arranged in one or more rows and a plurality of columns such that, a total number of the one or more rows is less than a total number of the plurality of columns, and the one or more rows extend in a first direction, the first image sensor being arranged such that an angle between the first direction and a second direction is greater than 45 degrees and equal to or less than 90 degrees, the second direction being a direction parallel to the rotation axis or a direction in which the object moves during analysis of the object by the imaging system.
Abstract:
An image sensor includes a first semiconductor chip having a first surface and a second surface, the first semiconductor chip a including an array of unit pixels configured to capture light corresponding to an image and to generate image signals based on the captured light; and a second semiconductor chip having a first surface and a second surface, the second semiconductor chip including first peripheral circuits configured to control the array of pixels and receive the generated image signals, the first peripheral circuits including a vertical scanning circuit, a horizontal scanning circuit, and a signal read-out circuit, the first semiconductor chip being stacked on the second semiconductor chip, the first semiconductor chip not being smaller than the second semiconductor chip.
Abstract:
A color solid-state image pickup device includes a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate. The inside of each of photoelectric conversion areas 10 is two-dimensionally partitioned into a plurality of segments R, G1, G2, and B which output a plurality of photoelectric conversion signals of different spectral sensitivities. As a result, occurrence of a false signal and a false color is suppressed, and high-sensitivity, high-resolution image data having superior color reproducibility can be obtained.
Abstract:
A solid state image pickup device comprises: a semiconductor substrate defining a two-dimensional surface; a number of photoelectric conversion elements disposed in a light receiving area of the semiconductor substrate in a matrix shape and in a plurality of rows and columns; signal processors, each formed for each column of the photoelectric conversion elements, the signal processor at least converting analog image data from the photoelectric conversion elements into digital image data; and a non-volatile memory formed in correspondence with respective photoelectric conversion elements at a succeeding stage of the signal processor, the non-volatile memory recording the digital image data.
Abstract:
A solid-state imaging device including a photoelectric conversion portion and a charge transfer portion equipped with charge transfer electrodes to transfer the charge generated in the photoelectric conversion portion, wherein the charge transfer portion is provided with a charge transfer electrodes having a first electrode including a first layer electric conductive film, and a second electrode having a second layer electric conductive film provided contiguously to the first electrode with an electrode insulating film therebetween, and the first electrode is coated with a silicon oxide film that is the electrode insulating film formed by side wall oxidation in the state that the upside is coated with an antioxidizing film so as to coat the side wall.
Abstract:
A solid-state imaging device including a photoelectric conversion portion and a charge transfer portion equipped with charge transfer electrodes to transfer the charge generated in the photoelectric conversion portion, wherein the charge transfer portion is provided with a charge transfer electrodes having a first electrode including a first layer electric conductive film, and a second electrode having a second layer electric conductive film provided contiguously to the first electrode with an electrode insulating film therebetween, and the first electrode is coated with a silicon oxide film that is the electrode insulating film formed by side wall oxidation in the state that the upside is coated with an antioxidizing film so as to coat the side wall.
Abstract:
A solid state image pickup device is provided which performs a new form of image signal reading operation. The image pickup deice comprises a semiconductor substrate and a plurality of pixels that are formed on the semiconductor substrate, with each pixel having a photodetection element, which generates signal charges upon receiving incident light, a first MOS transistor structure, which has a first floating gate that is disposed above the semiconductor substrate and a first control gate that is capacitively coupled to the first floating gate, and a second MOS transistor structure, which has a second floating gate that is disposed above the semiconductor substrate and is electrically connected to the first floating gate and a second control gate that is capacitively coupled to the second floating gate.
Abstract:
In a complementary insulated-gate field effect transistor including insulated-gate field effect transistors of p-channel and n-channel types, a portion of the insulating material layer to be used to form the n-channel transistor is formed to be thicker than a portion thereof to be used to form the p-channel transistor, and a portion of the electrode material layer to be used to constitute the p-channel transistor is formed to be longer along the channel than a portion thereof to be used to constitute the n-channel transistor. This prevents the threshold voltage in the n-channel and p-channel transistors from scattering widely. Alternatively, the ion peak concentration of the ions implanted in the semiconductor substrate and the insulating material layer is located in the proximity of the boundary between the insulating material layer and the semiconductor substrate in the portion to be used to constitute the n-channel transistor, and is located in the semiconductor substrate apart from the insulating material layer in the portion to be used to constitute the p-channel transistor. This also enables the threshold voltage in the n-channel and p-channel transistors to be precisely controlled in the manufacturing processes.
Abstract:
A computed tomographic (CT) system includes a gantry having a rotating part including a light source, a light source drive control circuit, a rechargeable battery, and a rotating part interface. The gantry includes a detector, a detector control and signal processing circuit, and an image memory. The rotating part may rotate around a central axis. The CT system includes a gantry table on which the gantry is mounted and which includes a host interface. The CT system includes a motor that may cause the gantry to move within a gantry moving range, and a control unit that may process and display image data obtained from the gantry. The rotating part interface may face the host interface, such that the rotating part and host interfaces are configured to be electrically connected with each other, based on the gantry being at a predetermined position within the gantry moving range.