公开(公告)号：US07064405B2

公开(公告)日：2006-06-20

申请号：US10823660

申请日：2004-04-14

申请人： Ryuji Kondo ,  Shinji Uya ,  Yuko Nomura

发明人： Ryuji Kondo ,  Shinji Uya ,  Yuko Nomura

IPC分类号： H01L31/0232

CPC分类号： H01L27/14618 ,  H01L27/14627 ,  H01L27/14806 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.

摘要翻译： 形成具有光电传感器，垂直CCD，水平CCD和遮光膜的半导体结构。 在半导体结构上形成由含添加剂的氧化硅构成的第一绝缘层。 在回流的第一绝缘层和光电传感器的上方形成向上和向下凸的内透镜。 形成覆盖内透镜并由氧化硅基绝缘体制成的第二绝缘层。 平面化 滤色器形成在第二绝缘层的平坦化表面上。 形成由透明材料制成的透明平坦层，覆盖滤色器。 微透镜形成在透明平坦层上。 覆盖微透镜的是形成折射率低于微透镜的低折射率层。 在其上设置透明板。 封装有透明板的半导体结构。

公开(公告)号：US4849619A

公开(公告)日：1989-07-18

申请号：US95493

申请日：1987-09-11

申请人： Takashi Miida ,  Ryuji Kondo ,  Jin Murayama ,  Masatoshi Tabei ,  Nozomu Ozaki

发明人： Takashi Miida ,  Ryuji Kondo ,  Jin Murayama ,  Masatoshi Tabei ,  Nozomu Ozaki

IPC分类号： G02B7/34

CPC分类号： G02B7/346

摘要： A phase difference detector of the type capable of distinguishing a focused state by detecting relative positions of a pair of optical images obtained from an object, comprises sensor means adapted to photoelectrically convert the pair of optical images and to output a first analog electrical signal corresponding to one of the optical images and a second analog electrical signal corresponding to the other optical image, the signals being generated by the photoelectric conversion, at a predetermined period and in a non-destructive manner, and analog arithmetic means for subjecting the pair of analog electrical signals output from the sensor means to a correlative arithmetic operation.

摘要翻译： 一种能够通过检测从物体获得的一对光学图像的相对位置来区分聚焦状态的相位差检测器，包括适于对该对光学图像进行光电转换的传感器装置，并输出对应于 光学图像中的一个和对应于另一光学图像的第二模拟电信号，信号是以预定的周期和非破坏性方式通过光电转换产生的，以及模拟计算装置，用于使一对模拟电气 从传感器装置输出的信号到相关算术运算。

公开(公告)号：US4514830A

公开(公告)日：1985-04-30

申请号：US344974

申请日：1982-02-02

申请人： Takaaki Hagiwara ,  Masatada Horiuchi ,  Ryuji Kondo ,  Yuji Yatsuda ,  Shinichi Minami

发明人： Takaaki Hagiwara ,  Masatada Horiuchi ,  Ryuji Kondo ,  Yuji Yatsuda ,  Shinichi Minami

IPC分类号： H01L27/112 ,  G11C29/00 ,  G11C29/04 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  G11C11/40

CPC分类号： G11C29/789

摘要： An LSI memory comprises a memory array including usual memory cells arranged in a matrix form, usual address transistors for selecting usual lines connected to the columns or rows of the memory array, address lines for controlling the usual address transistors, spare memory cells provided in the memory array, a spare line connected to the spare memory cells, spare address transistors connected between the address lines and the spare lines, and nonvolatile memory elements connected between the sources of the spare address transistors and the ground. By putting any one of the nonvolatile memory elements into the written state, any one of the spare address transistors are conditioned into an active state so that the spare line can be substituted for a defective usual line.

摘要翻译： LSI存储器包括存储器阵列，其包括以矩阵形式布置的常规存储器单元，用于选择连接到存储器阵列的列或行的常用线的常用地址晶体管，用于控制通常地址晶体管的地址线，设置在存储器阵列中的备用存储器单元 存储器阵列，连接到备用存储器单元的备用线路，连接在地址线和备用线路之间的备用地址晶体管，以及连接在备用地址晶体管的源极和地之间的非易失性存储器元件。 通过将非易失性存储器元件中的任何一个置于写入状态，任何一个备用地址晶体管被调节成活动状态，使得备用线可以代替缺陷通常的线。

公开(公告)号：US4460980A

公开(公告)日：1984-07-17

申请号：US193124

申请日：1980-10-02

申请人： Takaaki Hagiwara ,  Yokichi Itoh ,  Ryuji Kondo ,  Yuji Yatsuda ,  Shinichi Minami

发明人： Takaaki Hagiwara ,  Yokichi Itoh ,  Ryuji Kondo ,  Yuji Yatsuda ,  Shinichi Minami

IPC分类号： G11C17/00 ,  G11C16/04 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/417 ,  H01L29/788 ,  H01L29/792 ,  G11C11/40 ,  H01L27/02 ,  H01L29/34 ,  H01L29/78

CPC分类号： H01L27/105 ,  G11C16/0466 ,  H01L29/792 ,  Y10S257/903

摘要： A semiconductor nonvolatile memory wherein a unit cell is constructed of a series connection consisting of an MNOS (metal--silicon nitride--silicon dioxide--semiconductor) transistor whose gate electrode is made of polycrystalline silicon and an MOS (metal--silicon dioxide--semiconductor) transistor whose gate electrode is also made of polycrystalline silicon, such unit cells being arrayed in the form of a matrix, and wherein the gate electrode of the MOS transistor is used as a reading word line, the gate electrode of the MNOS transistor is used as a writing word line, and a terminal of either of the MNOS transistor and the MOS transistor connected in series and constituting the unit cell is used as a data line.

摘要翻译： 一种半导体非易失性存储器，其中单元由由栅电极由多晶硅制成的MNOS（金属 - 氮化硅 - 二氧化硅 - 半导体）晶体管和MOS（金属 - 二氧化硅 - 半导体）晶体管）构成的串联连接构成， 其栅极也由多晶硅制成，这样的单电池以矩阵的形式排列，其中MOS晶体管的栅极用作读取字线，MNOS晶体管的栅电极用作 写入字线，并且串联连接并构成单元的MNOS晶体管和MOS晶体管中的任一个的端子被用作数据线。

公开(公告)号：US20050045975A1

公开(公告)日：2005-03-03

申请号：US10823660

申请日：2004-04-14

申请人： Ryuji Kondo ,  Shinji Uya ,  Yuko Nomura

发明人： Ryuji Kondo ,  Shinji Uya ,  Yuko Nomura

IPC分类号： H01L27/14 ,  H01L27/148 ,  H01L27/15 ,  H04N5/335 ,  H04N5/372

CPC分类号： H01L27/14618 ,  H01L27/14627 ,  H01L27/14806 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.

摘要翻译： 形成具有光电传感器，垂直CCD，水平CCD和遮光膜的半导体结构。 在半导体结构上形成由含添加剂的氧化硅构成的第一绝缘层。 在回流的第一绝缘层和光电传感器的上方形成向上和向下凸的内透镜。 形成覆盖内透镜并由氧化硅基绝缘体制成的第二绝缘层。 平面化 滤色器形成在第二绝缘层的平坦化表面上。 形成由透明材料制成的透明平坦层，覆盖滤色器。 微透镜形成在透明平坦层上。 覆盖微透镜的是形成折射率低于微透镜的低折射率层。 在其上设置透明板。 封装有透明板的半导体结构。

公开(公告)号：US5264393A

公开(公告)日：1993-11-23

申请号：US842652

申请日：1992-02-27

申请人： Hiroshi Tamura ,  Ryuji Kondo ,  Jin Murayama ,  Hideki Kosaka ,  Noboru Maruyama ,  Toshihiko Komatsu

发明人： Hiroshi Tamura ,  Ryuji Kondo ,  Jin Murayama ,  Hideki Kosaka ,  Noboru Maruyama ,  Toshihiko Komatsu

IPC分类号： H01L31/0203 ,  H01L21/60

CPC分类号： H01L31/0203 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/16195

摘要： A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass. A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other. By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results. Further, a method of manufacturing the solid sate image pick-up device of the present invention is provided.

摘要翻译： 提供一种固体摄像装置，其中光电转换元件被配置为使得光电转换元件的光接收部分被透光玻璃的部件覆盖。 用作包装的框架通过灌封法填充合成树脂，合成树脂固化，使得框架，玻璃构件的周边部分和光电转换元件彼此一体地组合。 通过这样做，可以适当地制造光电元件的透光性，可以获得优异的耐湿性，并提高器件的可靠性。 此外，提供了制造本发明的固体摄像装置的方法。

公开(公告)号：US4866002A

公开(公告)日：1989-09-12

申请号：US171278

申请日：1988-03-21

申请人： Makoto Shizukuishi ,  Hideki Mutoh ,  Ryuji Kondo

发明人： Makoto Shizukuishi ,  Hideki Mutoh ,  Ryuji Kondo

IPC分类号： H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/8238 ,  H01L27/0927 ,  Y10S438/981

摘要： In a complementary insulated-gate field effect transistor including insulated-gate field effect transistors of p-channel and n-channel types, a portion of the insulating material layer to be used to form the n-channel transistor is formed to be thicker than a portion thereof to be used to form the p-channel transistor, and a portion of the electrode material layer to be used to constitute the p-channel transistor is formed to be longer along the channel than a portion thereof to be used to constitute the n-channel transistor. This prevents the threshold voltage in the n-channel and p-channel transistors from scattering widely. Alternatively, the ion peak concentration of the ions implanted in the semiconductor substrate and the insulating material layer is located in the proximity of the boundary between the insulating material layer and the semiconductor substrate in the portion to be used to constitute the n-channel transistor, and is located in the semiconductor substrate apart from the insulating material layer in the portion to be used to constitute the p-channel transistor. This also enables the threshold voltage in the n-channel and p-channel transistors to be precisely controlled in the manufacturing processes.

摘要翻译： 在包括p沟道和n沟道类型的绝缘栅场效应晶体管的互补绝缘栅场效应晶体管中，用于形成n沟道晶体管的绝缘材料层的一部分形成为比 其部分用于形成p沟道晶体管，并且用于构成p沟道晶体管的电极材料层的一部分沿着沟道形成为比用于构成p沟道晶体管的部分更长 通道晶体管。 这防止n沟道和p沟道晶体管中的阈值电压广泛散射。 或者，注入到半导体衬底和绝缘材料层中的离子的离子峰浓度位于用于构成n沟道晶体管的部分中绝缘材料层和半导体衬底之间的边界附近， 并且位于与要用于构成p沟道晶体管的部分中的绝缘材料层之间的半导体衬底中。 这也使得能够在制造工艺中精确地控制n沟道晶体管和p沟道晶体管中的阈值电压。

公开(公告)号：US4264376A

公开(公告)日：1981-04-28

申请号：US66795

申请日：1979-08-15

申请人： Yuji Yatsuda ,  Shinichi Minami ,  Ryuji Kondo ,  Takaaki Hagiwara ,  Yokichi Itoh

发明人： Yuji Yatsuda ,  Shinichi Minami ,  Ryuji Kondo ,  Takaaki Hagiwara ,  Yokichi Itoh

IPC分类号： H01L27/112 ,  G11C16/04 ,  H01L21/28 ,  H01L21/30 ,  H01L21/336 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L21/324

CPC分类号： H01L21/28185 ,  G11C16/0466 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3003 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792 ,  Y10S438/909

摘要： A metal-silicon nitride-silicon oxide-substrate (MNOS) type nonvolatile memory device is disclosed. After the silicon nitride film has been formed, the heat treatment in the hydrogen atmosphere is performed. As a result of this heat treatment, the degradation of the memory retention characteristic is prevented so that a nonvolatile memory device having a silicon gate can be obtained which is comparable to a conventional nonvolatile memory device having an aluminum gate.

摘要翻译： 公开了一种金属 - 氮化硅 - 氧化硅 - 衬底（MNOS）型非易失性存储器件。 在形成氮化硅膜之后，进行氢气氛中的热处理。 作为这种热处理的结果，防止存储器保持特性的劣化，从而可以获得与具有铝栅极的常规非易失性存储器件相当的具有硅栅极的非易失性存储器件。

公开(公告)号：US07230224B2

公开(公告)日：2007-06-12

申请号：US10348771

申请日：2003-01-23

申请人： Ryuji Kondo ,  Tetsuo Yamada

发明人： Ryuji Kondo ,  Tetsuo Yamada

IPC分类号： H04N5/335

CPC分类号： H01L27/14812 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14843 ,  H01L27/14868

摘要： A solid state image pickup device having: a semiconductor substrate having a light receiving area; a number of pixels formed in the light receiving area of the semiconductor substrate in a matrix shape, each of the pixels having a main photosensitive field having a relatively large area and a subsidiary photosensitive field having a relatively small area; a main color filter array formed above the semiconductor substrate and covering at least the main photosensitive fields in register with the respective pixels; and a micro lens array formed on the color filter array and covering at least the main photosensitive fields in register with the respective pixels, wherein an image signal can be selectively picked up from either one of the main and subsidiary photosensitive fields. A solid state image pickup device having a high resolution can be provided.

摘要翻译： 一种固态摄像装置，具有：具有受光面积的半导体基板; 形成在矩阵状的半导体衬底的光接收区域中的多个像素，每个像素具有相对较大面积的主感光场和具有相对较小面积的辅助感光场; 主色滤光片阵列，形成在半导体衬底之上并且至少覆盖与各像素对准的主感光场; 以及形成在滤色器阵列上并且至少覆盖与各个像素对准的主要光敏场的微透镜阵列，其中可以从主光敏场和辅助光敏场中的任一个选择性地拾取图像信号。 可以提供具有高分辨率的固态图像拾取装置。

公开(公告)号：US06414343B1

公开(公告)日：2002-07-02

申请号：US09676769

申请日：2000-10-02

申请人： Ryuji Kondo ,  Kazuyuki Masukane

发明人： Ryuji Kondo ,  Kazuyuki Masukane

IPC分类号： H01L31062

CPC分类号： H01L27/14627 ,  H01L27/14625

摘要： A solid-state imaging device comprises: a semiconductor substrate which demarcates a two-dimensional surface; a multiplicity of photoelectric conversion units configured in a multiplicity of rows and columns on the surface of said semiconductor substrate; a light shielding film having openings formed above said semiconductor substrate, each of the openings is formed on each of said photoelectric conversion unit; a planarizing insulating film formed on said light shielding film; micro lenses formed on said planarizing insulating film, each micro lens is formed just above each of said opening; and a modifying film having one layer or a plurality of layers formed directly on said micro lenses and having a top surface with different curvature from that of a top surface of the micro lenses.

摘要翻译： 固态成像装置包括：划分二维表面的半导体衬底; 在所述半导体衬底的表面上以多个行和列配置的多个光电转换单元; 具有形成在所述半导体衬底上方的开口的遮光膜，每个所述开口形成在所述光电转换单元的每一个上; 形成在所述遮光膜上的平坦化绝缘膜; 形成在所述平坦化绝缘膜上的微透镜，每个微透镜形成在每个所述开口的正上方; 以及具有直接在所述微透镜上形成的具有一层或多层的修饰膜，并且具有与微透镜的顶表面不同的曲率的顶表面。