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1.
公开(公告)号:US20090179006A1
公开(公告)日:2009-07-16
申请号:US12374889
申请日:2007-07-21
申请人: Marcus Lang
发明人: Marcus Lang
CPC分类号: H05K3/0085 , B05B12/20 , B05B14/00 , C23F1/02 , C23F1/08 , G03F7/30 , H01L21/67051 , H01L21/6708 , H01L21/67086 , H05K3/068 , H05K2203/0746 , H05K2203/1492 , H05K2203/1509
摘要: In a method for wet-chemical treatment of surfaces of a material. a pulse-like spray jet of treatment fluid is directed against the surface of the material. This causes a pronounced impact action against the base of a structure to be processed so that the amount of treatment time which is necessary is substantially reduced. The pressure-free and accelerated outflow of the treatment fluid from the structure channels in the pauses between pulses results in the flanks of the structures or circuit-board conductors being subjected to less wet-chemical processing than in the prior art. In case of chemical etching the result is a smaller undercutting.
摘要翻译: 在用于湿化学处理材料表面的方法中。 处理流体的脉冲状喷射射流被引向材料的表面。 这对待处理的结构的底部产生明显的冲击作用,从而大大减少必要的处理时间量。 在脉冲之间的停顿期间处理流体从结构通道无压力和加速流出导致结构或电路板导体的侧面经受比现有技术更少的湿化学处理。 在化学蚀刻的情况下,结果是较小的底切。
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公开(公告)号:US20130011568A1
公开(公告)日:2013-01-10
申请号:US13638162
申请日:2011-03-31
申请人: Marcus Lang
发明人: Marcus Lang
CPC分类号: C23F1/08 , B05B13/0447
摘要: The invention relates to a device for spraying a surface of a substrate, wherein the device comprises at least one first spray nozzle for the supply of a fluid to the surface of the substrate to be treated and the first spray nozzle is arranged at a first distance from the substrate, wherein at least one second spray nozzle is arranged at a second distance from the substrate and a ratio of the second distance to the first distance is in a range from 0.1 to 0.8. At most a first volume flow of the fluid can be passed through the at least one first spray nozzle and at most a second volume flow of the fluid can be passed through the at least one second spray nozzle, wherein the ratio of the second volume flow to the first volume flow is in a range from 0.005 to 0.5.
摘要翻译: 本发明涉及一种用于喷涂基材表面的装置,其中该装置包括至少一个第一喷嘴,用于向被处理基材的表面供应流体,第一喷嘴布置在第一距离处 从衬底,其中至少一个第二喷嘴布置在离开衬底的第二距离处,并且第二距离与第一距离的比率在0.1至0.8的范围内。 最多流体的第一体积流可以通过至少一个第一喷嘴,并且流体的至多第二体积流可以通过至少一个第二喷嘴,其中第二体积流量 第一体积流量在0.005至0.5的范围内。
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