公开(公告)号：US11937379B2

公开(公告)日：2024-03-19

申请号：US17301130

申请日：2021-03-25

申请人： AT&S Austria Technologie & Systemtechnik Aktiengesellschaft

发明人： Jolanta Klocek

IPC分类号： H05K3/06

CPC分类号： H05K3/067 ,  H05K3/062 ,  H05K3/068

摘要： A method of etching an electrically conductive layer structure during manufacturing a component carrier is provided. The method includes subjecting the electrically conductive layer structure to an etching composition having an etchant and a photosensitive compound to thereby form a recess in the electrically conductive layer structure; while, at least for a part of time, irradiating and/or heating the recess. In addition, an apparatus for etching an electrically conductive layer structure during manufacturing a component carrier, an etched electrically conductive layer structure and a component carrier are provided.

公开(公告)号：US11756840B2

公开(公告)日：2023-09-12

申请号：US16444792

申请日：2019-06-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yan-Hong Liu ,  Daniel M. Y. Yang ,  Che-Fu Chen

IPC分类号： H01L21/66 ,  H01L21/687 ,  H01L21/67 ,  H01L21/3213 ,  G01N21/55 ,  H05K3/06

CPC分类号： H01L22/12 ,  G01N21/55 ,  H01L21/32137 ,  H01L21/67253 ,  H01L21/68707 ,  H05K3/068

摘要： A system includes a factory interface, an etching tool, and at least one measuring device. The factory interface is configured to carry a wafer. The etching tool is coupled to the factory interface and configured to process the wafer transferred from the factory interface. The at least one measuring device is equipped in the factory interface, the etching tool, or the combination thereof. The at least one measuring device is configured to perform real-time measurements of reflectance from the wafer that is carried in the factory interface or the etching tool.

公开(公告)号：US20170022616A1

公开(公告)日：2017-01-26

申请号：US15301181

申请日：2015-04-01

申请人： SIGMA ENGINEERING AB

发明人： Mats ANDERSSON

IPC分类号： C23F1/46 ,  C23F1/08 ,  H05K3/06 ,  C23F1/18

CPC分类号： C23F1/46 ,  C23F1/08 ,  C23F1/18 ,  H05K3/067 ,  H05K3/068 ,  H05K2203/087

摘要： The present invention relates to a process of oxidizing copper in a copper etching solution by using oxygen gas and/or air as an oxidizing agent, the process comprising the steps of: a) introducing the oxidizing agent into an acidic reduced copper etching solution comprising Cl− and Cu+, b) stirring the solution obtained in step a), and thereby allowing the reaction 2Cu++½O2 (aq)+2H+→2Cu2++H2O to occur, thereby producing an oxidized copper etching solution comprising less Cu+ than the reduced copper etching solution. An advantage of the present invention is that it provides an improved process at least in terms of the speed of the oxidation and the quality of the etching.

摘要翻译： 本发明涉及一种通过使用氧气和/或空气作为氧化剂在铜蚀刻溶液中氧化铜的方法，该方法包括以下步骤：a）将氧化剂引入到包含Cl的酸性还原铜蚀刻溶液中 - 和Cu +，b）搅拌步骤a）中获得的溶液，从而使反应2Cu ++½O2（aq）+ 2H +→2Cu2 ++ H2O发生，从而产生包含比还原的更少的Cu +的氧化铜蚀刻溶液 铜蚀刻溶液。 本发明的一个优点是至少在氧化速度和蚀刻质量方面提供了一种改进的方法。

公开(公告)号：US09301397B2

公开(公告)日：2016-03-29

申请号：US14238781

申请日：2012-09-19

申请人： 3M INNOVATIVE PROPERTIES COMPANY

发明人： Jeffrey H. Tokie ,  Joseph W. Woody, V ,  Thomas M. Lynch ,  Daniel M. Lentz ,  Robert S. Davidson ,  Cristin E. Moran ,  Lijun Zu

IPC分类号： H05K3/06 ,  C23F1/00 ,  C02F1/10 ,  C23F1/02 ,  C23F1/08 ,  C23F1/30 ,  C23F1/46

CPC分类号： H05K3/06 ,  C02F1/10 ,  C23F1/00 ,  C23F1/02 ,  C23F1/08 ,  C23F1/14 ,  C23F1/30 ,  C23F1/46 ,  H05K3/068 ,  H05K2203/1545

摘要： Metalized web substrate is wet etched in a reaction vessel by contacting with oxidizing and metal complexing agent to remove metal from unpatterned region. Following etching, substrate is rinsed, and rinse is at least partly recycled. Concentrations of oxidizing and metal complexing agents in the etchant bath are maintained by delivering replenishment feeds of each. Concentration of metal in the etchant bath is maintained by discharging some of the etchant bath. Replenishment rates of oxidizing and metal complexing agents and etchant removal rate are determined based at least in part on rate that metal etched from the substrate enters the etchant bath.

摘要翻译： 通过与氧化和金属络合剂接触来在反应容器中湿法蚀刻金属化网状基材以从未图案化的区域去除金属。 在蚀刻之后，将基底冲洗，冲洗至少部分回收。 腐蚀剂浴中的氧化剂和金属络合剂的浓度通过输送各种补充饲料来维持。 通过排出一些蚀刻剂浴来维持蚀刻液中的金属浓度。 至少部分地基于从基板蚀刻的金属进入蚀刻剂浴的速率来确定氧化和金属络合剂的补充速率和蚀刻剂去除速率。

公开(公告)号：US20130071670A1

公开(公告)日：2013-03-21

申请号：US13237487

申请日：2011-09-20

申请人： Manoj Narayanan ,  Beihai Ma ,  Uthamalingam Balachandran ,  Stephen Dorris

发明人： Manoj Narayanan ,  Beihai Ma ,  Uthamalingam Balachandran ,  Stephen Dorris

IPC分类号： B32B9/04 ,  B05D5/12 ,  B32B15/04 ,  C01F11/02

CPC分类号： H05K3/068 ,  C01G55/00 ,  C01G55/002 ,  C01P2004/03 ,  C01P2006/32 ,  C01P2006/40 ,  H01B1/08 ,  H01L28/65 ,  H05K1/092 ,  Y10T428/31678

摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.

摘要翻译： 本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。

公开(公告)号：US20090314739A1

公开(公告)日：2009-12-24

申请号：US12345896

申请日：2008-12-30

申请人： CHIH-KANG YANG ,  WEN-CHIN LEE

发明人： CHIH-KANG YANG ,  WEN-CHIN LEE

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H05K3/0085 ,  H05K3/068 ,  H05K2203/0195 ,  H05K2203/075 ,  H05K2203/082 ,  H05K2203/1476 ,  H05K2203/1509 ,  H05K2203/166

摘要： An exemplary system for processing a workpiece comprises a conveyor, a first liquid spraying device, a second liquid spraying device, and a substrate positioning device. The conveyor is configured for conveying the workpiece along a conveying direction. The first and second liquid spraying devices for spraying liquid onto the workpiece transported on the conveyor face the conveyor and are arranged along the conveying direction. The substrate positioning device for reorienting the workpiece on the conveyor is installed between the first and second liquid spraying devices and faces the conveyor.

摘要翻译： 用于处理工件的示例性系统包括输送机，第一液体喷射装置，第二液体喷射装置和基板定位装置。 输送机构造成沿输送方向输送工件。 第一和第二液体喷射装置，用于将液体喷射到在输送机上传送的工件上，并且沿输送方向布置。 用于在输送机上重新定向工件的基板定位装置安装在第一和第二液体喷涂装置之间并面向输送机。

公开(公告)号：US20090179006A1

公开(公告)日：2009-07-16

申请号：US12374889

申请日：2007-07-21

申请人： Marcus Lang

发明人： Marcus Lang

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H05K3/0085 ,  B05B12/20 ,  B05B14/00 ,  C23F1/02 ,  C23F1/08 ,  G03F7/30 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67086 ,  H05K3/068 ,  H05K2203/0746 ,  H05K2203/1492 ,  H05K2203/1509

摘要： In a method for wet-chemical treatment of surfaces of a material. a pulse-like spray jet of treatment fluid is directed against the surface of the material. This causes a pronounced impact action against the base of a structure to be processed so that the amount of treatment time which is necessary is substantially reduced. The pressure-free and accelerated outflow of the treatment fluid from the structure channels in the pauses between pulses results in the flanks of the structures or circuit-board conductors being subjected to less wet-chemical processing than in the prior art. In case of chemical etching the result is a smaller undercutting.

摘要翻译： 在用于湿化学处理材料表面的方法中。 处理流体的脉冲状喷射射流被引向材料的表面。 这对待处理的结构的底部产生明显的冲击作用，从而大大减少必要的处理时间量。 在脉冲之间的停顿期间处理流体从结构通道无压力和加速流出导致结构或电路板导体的侧面经受比现有技术更少的湿化学处理。 在化学蚀刻的情况下，结果是较小的底切。

公开(公告)号：US07553457B2

公开(公告)日：2009-06-30

申请号：US10855982

申请日：2004-05-27

申请人： Tsugio Gomi

发明人： Tsugio Gomi

IPC分类号： H01L21/306

CPC分类号： G03F7/30 ,  G03F7/3042 ,  H05K1/0393 ,  H05K3/0073 ,  H05K3/0085 ,  H05K3/064 ,  H05K3/068 ,  H05K2203/1545

摘要： A chemical processing apparatus includes a chemical tank that stores a chemical, means for transferring an object to be processed into the chemical and a lid disposed to cover a liquid surface of the chemical and to float on the chemical.

摘要翻译： 一种化学处理设备包括：储存化学品的化学容器，用于将待处理物体转移到化学品中的装置;以及设置成覆盖化学品的液体表面并漂浮在化学品上的盖子。

公开(公告)号：US20080128383A1

公开(公告)日：2008-06-05

申请号：US11970400

申请日：2008-01-07

申请人： Hiroki Tamano

发明人： Hiroki Tamano

IPC分类号： H01B13/00

CPC分类号： H05K3/0085 ,  H05K1/0393 ,  H05K3/068 ,  H05K2203/0746 ,  H05K2203/1545

摘要： An etching apparatus for forming conductor patterns by etching a wiring board is provided. The etching apparatus includes a drum, a chamber and a nozzle head. The drum is configured to run a flexible wiring board under rotation while turning it around a drum face. The chamber is a chamber for storing an etching liquid under a constant pressure. The nozzle head is arranged at a position in the vicinity of the drum face in an upper portion of the chamber. The etching liquid pressurized in the chamber is linearly ejected onto the drum face through the nozzle holes.

摘要翻译： 提供了通过蚀刻布线板形成导体图案的蚀刻装置。 蚀刻装置包括鼓，腔室和喷嘴头。 滚筒被配置成使旋转的柔性布线板在滚筒周围转动。 该室是用于在恒定压力下存储蚀刻液体的室。 喷嘴头布置在室的上部中的鼓面附近的位置。 在腔室中加压的蚀刻液通过喷嘴孔线性地喷射到鼓面上。

公开(公告)号：US20080035603A1

公开(公告)日：2008-02-14

申请号：US11614362

申请日：2006-12-21

申请人： WEN-CHIN LEE ,  CHENG-HSIEN LIN

发明人： WEN-CHIN LEE ,  CHENG-HSIEN LIN

IPC分类号： H01B13/00 ,  B44C1/22 ,  C23F1/00

CPC分类号： C23F1/08 ,  H05K3/068 ,  H05K2203/075

摘要： The present invention relates to an apparatus for spraying an etchant and a method for manufacturing a printed circuit board. In one exemplary embodiment the apparatus includes a manifold, a plurality of feed pipes in fluid communication with the manifold, each of the feed pipes having a plurality of spray nozzles mounted thereon, the feed pipes cooperatively constitute a spray region, and a pressure-boosting device configured for increasing a spray pressure of the spray nozzles which are located at a central area of the spray region. The apparatus can overcome “the puddle effect” on an upper surface of the printed circuit board.

摘要翻译： 本发明涉及喷涂蚀刻剂的设备和印刷电路板的制造方法。 在一个示例性实施例中，设备包括歧管，与歧管流体连通的多个进料管，每个进料管具有安装在其上的多个喷嘴，进料管协同地构成喷射区域，并且加压 该装置被配置为增加位于喷射区域的中心区域处的喷嘴的喷雾压力。 该设备可以克服印刷电路板上表面上的“水坑效应”。