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1.发明授权Orthogonal processing of organic materials used in electronic and electrical devices 有权用于电子和电气设备的有机材料的正交处理公开(公告)号：US08846301B2
公开(公告)日：2014-09-30
申请号：US12994353
申请日：2009-05-21
申请人： Christopher K. Ober , George Malliaras , Jin-Kyun Lee , Alexander Zakhidov , Margarita Chatzichristidi , Priscilla Taylor
发明人： Christopher K. Ober , George Malliaras , Jin-Kyun Lee , Alexander Zakhidov , Margarita Chatzichristidi , Priscilla Taylor
CPC分类号： G03F7/20 , G03F7/0046 , G03F7/0048 , G03F7/0392 , G03F7/16 , G03F7/30 , G03F7/325 , G03F7/40 , H01L51/0018 , Y02E10/549 , Y10T428/24802
摘要： An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.
摘要翻译： 公开了一种用于光刻图案化有机结构的正交方法。 所公开的方法使用氟化溶剂或超临界CO 2作为溶剂，使得有机导体和半导体的性能不会受其它侵蚀性溶剂的不利影响。 一种公开的方法也可以与HFE溶剂一起使用氟化光致抗蚀剂，但也可以使用其它氟化溶剂。 在一个实施方案中，氟化光致抗蚀剂是间苯二酚，但是也可以使用各种氟化聚合物光致抗蚀剂和氟化分子玻璃光致抗蚀剂。 例如，甲基丙烯酸全氟癸基酯共聚物（FDMA）和甲基丙烯酸2-硝基苄酯（NBMA）是在光刻工艺中与氟化溶剂和超临界二氧化碳一起使用的合适的正交氟化光致抗蚀剂。 氟化光致抗蚀剂和氟化溶剂的组合提供了通过本领域已知的方法或装置尚未实现的鲁棒的正交方法。
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2.发明申请Orthogonal Procesing of Organic Materials Used in Electronic and Electrical Devices 有权用于电子电气设备的有机材料的正交处理公开(公告)号：US20110159252A1
公开(公告)日：2011-06-30
申请号：US12994353
申请日：2009-05-21
申请人： Christopher K. Ober , George Malliaras , Jin-Kyun Lee , Alexander Zakhidov , Margarita Chatzichristidi , Priscilla Taylor
发明人： Christopher K. Ober , George Malliaras , Jin-Kyun Lee , Alexander Zakhidov , Margarita Chatzichristidi , Priscilla Taylor
CPC分类号： G03F7/20 , G03F7/0046 , G03F7/0048 , G03F7/0392 , G03F7/16 , G03F7/30 , G03F7/325 , G03F7/40 , H01L51/0018 , Y02E10/549 , Y10T428/24802
摘要： An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.
摘要翻译： 公开了一种用于光刻图案化有机结构的正交方法。 所公开的方法使用氟化溶剂或超临界CO 2作为溶剂，使得有机导体和半导体的性能不会受其它侵蚀性溶剂的不利影响。 一种公开的方法也可以与HFE溶剂一起使用氟化光致抗蚀剂，但也可以使用其它氟化溶剂。 在一个实施方案中，氟化光致抗蚀剂是间苯二酚，但是也可以使用各种氟化聚合物光致抗蚀剂和氟化分子玻璃光致抗蚀剂。 例如，甲基丙烯酸全氟癸基酯共聚物（FDMA）和甲基丙烯酸2-硝基苄酯（NBMA）是在光刻工艺中与氟化溶剂和超临界二氧化碳一起使用的合适的正交氟化光致抗蚀剂。 氟化光致抗蚀剂和氟化溶剂的组合提供了通过本领域已知的方法或装置尚未实现的鲁棒的正交方法。
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