-
公开(公告)号：US20130236999A1
公开(公告)日：2013-09-12
申请号：US13638062
申请日：2011-04-27
申请人： Jin-Kyun Lee , Alexander Zakhidov , John Defranco
发明人： Jin-Kyun Lee , Alexander Zakhidov , John Defranco
IPC分类号： H01L51/56
CPC分类号： H01L51/0016 , G03F7/0046 , G03F7/325 , H01L27/3206 , H01L27/3211 , H01L27/3281 , H01L51/0018 , H01L51/504 , H01L51/56 , H05B33/10
摘要： A method is provided for forming a multi-color OLED device that includes providing a substrate, coating the substrate with a fluorinated photoresist solution to form a first photo-patternable layer and exposing it to produce a first pattern of exposed fluorinated photoresist material and a second pattern of unexposed fluorinated photoresist material, developing the photo-patternable layer with a fluorinated solvent to remove the second pattern of unexposed fluorinated photoresist material without removing the first pattern of exposed fluorinated photoresist material, depositing a first organic light-emitting material over the substrate to form a first organic light-emitting layer for emitting a first color of light and applying the first pattern of exposed fluorinated photoresist material to control the removal of a portion of the first organic light-emitting layer. A second fluorinated photoresist solution is then coated over the first patterened organic light-emitting layer and exposed to form a third pattern of exposed fluorinated photoresist material having a pattern different from the first pattern and a fourth pattern of unexposed fluorinated photoresist material, and developing the photo-patternable layer in a fluorinated solvent to remove the fourth pattern of unexposed fluorinated photoresist material without removing the third pattern of exposed fluorinated photoresist material, depositing at least a second light-emitting material to form a second light-emitting layer for emitting a second color of light that is different than the first color of light and applying the third pattern of exposed fluorinated photoresist material to control the removal of a portion of the second organic light-emitting layer.
摘要翻译： 提供了一种用于形成多色OLED器件的方法，其包括提供衬底，用氟化光致抗蚀剂溶液涂覆衬底以形成第一可光刻图层并使其暴露以产生暴露的氟化光致抗蚀剂材料的第一图案，并且第二 未曝光的氟化光致抗蚀剂材料的图案，用氟化溶剂显影光图案层以除去未曝光的氟化光致抗蚀剂材料的第二图案，而不去除暴露的氟化光致抗蚀剂材料的第一图案，将第一有机发光材料沉积在衬底上 形成用于发射第一颜色的光的第一有机发光层，并施加暴露的氟化光致抗蚀剂材料的第一图案以控制去除第一有机发光层的一部分。 然后将第二氟化光致抗蚀剂溶液涂覆在第一光刻的有机发光层上并暴露以形成具有不同于第一图案的图案和未曝光的氟化光致抗蚀剂材料的第四图案的暴露的氟化光致抗蚀剂材料的第三图案， 在氟化溶剂中的光图案化层，以去除未曝光的氟化光致抗蚀剂材料的第四图案，而不去除暴露的氟化光致抗蚀剂材料的第三图案，沉积至少第二发光材料以形成第二发光层，用于发射第二 与第一颜色的光不同的光的颜色，并施加暴露的氟化光致抗蚀剂材料的第三图案，以控制第二有机发光层的一部分的去除。
-
2.发明申请Orthogonal Procesing of Organic Materials Used in Electronic and Electrical Devices 有权用于电子电气设备的有机材料的正交处理公开(公告)号：US20110159252A1
公开(公告)日：2011-06-30
申请号：US12994353
申请日：2009-05-21
申请人： Christopher K. Ober , George Malliaras , Jin-Kyun Lee , Alexander Zakhidov , Margarita Chatzichristidi , Priscilla Taylor
发明人： Christopher K. Ober , George Malliaras , Jin-Kyun Lee , Alexander Zakhidov , Margarita Chatzichristidi , Priscilla Taylor
CPC分类号： G03F7/20 , G03F7/0046 , G03F7/0048 , G03F7/0392 , G03F7/16 , G03F7/30 , G03F7/325 , G03F7/40 , H01L51/0018 , Y02E10/549 , Y10T428/24802
摘要： An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.
摘要翻译： 公开了一种用于光刻图案化有机结构的正交方法。 所公开的方法使用氟化溶剂或超临界CO 2作为溶剂，使得有机导体和半导体的性能不会受其它侵蚀性溶剂的不利影响。 一种公开的方法也可以与HFE溶剂一起使用氟化光致抗蚀剂，但也可以使用其它氟化溶剂。 在一个实施方案中，氟化光致抗蚀剂是间苯二酚，但是也可以使用各种氟化聚合物光致抗蚀剂和氟化分子玻璃光致抗蚀剂。 例如，甲基丙烯酸全氟癸基酯共聚物（FDMA）和甲基丙烯酸2-硝基苄酯（NBMA）是在光刻工艺中与氟化溶剂和超临界二氧化碳一起使用的合适的正交氟化光致抗蚀剂。 氟化光致抗蚀剂和氟化溶剂的组合提供了通过本领域已知的方法或装置尚未实现的鲁棒的正交方法。
-
公开(公告)号：US20150270503A1
公开(公告)日：2015-09-24
申请号：US14390692
申请日：2012-06-19
申请人： Bjoern Luessem , Alexander Zakhidov , Hans Kleemann , Karl Leo
发明人： Bjoern Luessem , Alexander Zakhidov , Hans Kleemann , Karl Leo
CPC分类号： H01L51/0562 , B82Y10/00 , H01L51/0002 , H01L51/001 , H01L51/002 , H01L51/0021 , H01L51/0046 , H01L51/0059 , H01L51/102 , H01L51/105
摘要： The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.
摘要翻译： 本公开涉及有机场效应晶体管，以及制造有机场效应晶体管的方法。 有机场效应晶体管可以包括第一电极和第二电极，电极提供源电极和漏电极，与第一和第二电极电接触的本征有机半导体层，栅电极，提供的栅极绝缘体 在栅电极和本征有机半导体层之间，以及包括有机基质材料和有机掺杂剂的掺杂有机半导体层。
-
公开(公告)号：US20140322850A1
公开(公告)日：2014-10-30
申请号：US13638049
申请日：2011-04-27
申请人： Jin-Kyun Lee , Alexander Zakhidov , John Defranco
发明人： Jin-Kyun Lee , Alexander Zakhidov , John Defranco
CPC分类号： H01L51/0002 , G03F7/0046 , G03F7/0048 , G03F7/0392 , G03F7/325 , G03F7/40 , H01L51/0018 , H01L51/0023 , H01L51/56 , Y02E10/549
摘要： The present invention provides a method for forming an organic device having a patterned conductive layer that includes providing a substrate, depositing organic materials over the substrate to form one or more organic layers, coating a photoresist solution over the one or more organic layers to form a photo-patternable layer, wherein the solution includes a fluorinated photoresist material and a first fluorinated solvent, selectively exposing portions of the photo-patternable layer to radiation to form a first pattern of exposed fluorinated photoresist material and a second pattern of unexposed fluorinated photoresist material, exposing the substrate to a second fluorinated solvent to develop the photo-patternable layer, removing the second pattern of unexposed fluorinated photoresist material without removing the first pattern of exposed fluorinated photoresist material, coating one or more conductive layers over the one or more organic layers and removing a portion of the one or more of the conductive layers to form a pattern. Particular embodiments of the present invention for forming arrays of top contact TFTs and a pixilated organic device are also provided.
摘要翻译： 本发明提供一种用于形成具有图案化导电层的有机器件的方法，其包括提供衬底，在衬底上沉积有机材料以形成一个或多个有机层，在一个或多个有机层上涂覆光致抗蚀剂溶液以形成 光刻图层，其中所述溶液包括氟化光致抗蚀剂材料和第一氟化溶剂，选择性地将可光可图层的部分暴露于辐射以形成暴露的氟化光致抗蚀剂材料的第一图案和未曝光的氟化光致抗蚀剂材料的第二图案， 将衬底暴露于第二氟化溶剂以显影光可图案层，除去未曝光的氟化光致抗蚀剂材料的第二图案，而不去除暴露的氟化光致抗蚀剂材料的第一图案，在一个或多个有机层上涂覆一个或多个导电层，以及 删除一部分或一部分 e的导电层以形成图案。 还提供了用于形成顶部接触TFT阵列和像素化有机器件的本发明的特定实施例。
-
公开(公告)号：US08871545B2
公开(公告)日：2014-10-28
申请号：US13638062
申请日：2011-04-27
申请人： Jin-Kyun Lee , Alexander Zakhidov , John DeFranco
发明人： Jin-Kyun Lee , Alexander Zakhidov , John DeFranco
IPC分类号： H01L21/00 , H01L51/40 , G03F7/004 , H01L51/56 , H01L51/00 , G03F7/32 , H05B33/10 , H01L27/32
CPC分类号： H01L51/0016 , G03F7/0046 , G03F7/325 , H01L27/3206 , H01L27/3211 , H01L27/3281 , H01L51/0018 , H01L51/504 , H01L51/56 , H05B33/10
摘要： A method is provided for forming a multi-color OLED device that includes providing a substrate, coating the substrate with a fluorinated photoresist solution to form a first photo-patternable layer and exposing it to produce a first pattern of exposed fluorinated photoresist material and a second pattern of unexposed fluorinated photoresist material, developing the photo-patternable layer with a fluorinated solvent to remove the second pattern of unexposed fluorinated photoresist material without removing the first pattern of exposed fluorinated photoresist material, depositing a first organic light-emitting material over the substrate to form a first organic light-emitting layer for emitting a first color of light and applying the first pattern of exposed fluorinated photoresist material to control the removal of a portion of the first organic light-emitting layer. A second fluorinated photoresist solution is then coated over the first patterened organic light-emitting layer and exposed to form a third pattern of exposed fluorinated photoresist material having a pattern different from the first pattern and a fourth pattern of unexposed fluorinated photoresist material, and developing the photo-patternable layer in a fluorinated solvent to remove the fourth pattern of unexposed fluorinated photoresist material without removing the third pattern of exposed fluorinated photoresist material, depositing at least a second light-emitting material to form a second light-emitting layer for emitting a second color of light that is different than the first color of light and applying the third pattern of exposed fluorinated photoresist material to control the removal of a portion of the second organic light-emitting layer.
摘要翻译： 提供了一种用于形成多色OLED器件的方法，其包括提供衬底，用氟化光致抗蚀剂溶液涂覆衬底以形成第一可光刻图层并使其暴露以产生暴露的氟化光致抗蚀剂材料的第一图案，并且第二 未曝光的氟化光致抗蚀剂材料的图案，用氟化溶剂显影光图案层以除去未曝光的氟化光致抗蚀剂材料的第二图案，而不去除暴露的氟化光致抗蚀剂材料的第一图案，将第一有机发光材料沉积在衬底上 形成用于发射第一颜色的光的第一有机发光层，并施加暴露的氟化光致抗蚀剂材料的第一图案以控制去除第一有机发光层的一部分。 然后将第二氟化光致抗蚀剂溶液涂覆在第一光刻的有机发光层上并暴露以形成具有不同于第一图案的图案和未曝光的氟化光致抗蚀剂材料的第四图案的暴露的氟化光致抗蚀剂材料的第三图案， 在氟化溶剂中的光图案化层，以去除未曝光的氟化光致抗蚀剂材料的第四图案，而不去除暴露的氟化光致抗蚀剂材料的第三图案，沉积至少第二发光材料以形成第二发光层，用于发射第二 与第一颜色的光不同的光的颜色，并施加暴露的氟化光致抗蚀剂材料的第三图案，以控制第二有机发光层的一部分的去除。
-
6.发明授权公开(公告)号：US07718230B2
公开(公告)日：2010-05-18
申请号：US11271571
申请日：2005-11-11
申请人： Anvar A. Zakhidov , Rashmi Nanjundaswamy , Sergey Li , Alexander Zakhidov , Mei Zhang , Ray H. Baughman
发明人： Anvar A. Zakhidov , Rashmi Nanjundaswamy , Sergey Li , Alexander Zakhidov , Mei Zhang , Ray H. Baughman
CPC分类号： B81C1/00111 , H01J9/025 , Y10S977/89 , Y10T428/30
摘要： The present invention provides a method and apparatus for transferring an array of oriented carbon nanotubes from a first surface to a second surface by providing the array of oriented carbon nanotubes on the first surface within a vacuum chamber, providing the second surface within the vacuum chamber separate from the first surface, and applying an electric potential between the first surface and the second surface such that the array of oriented carbon nanotubes are sublimed from the first surface and re-deposited on the second surface.
摘要翻译： 本发明提供了一种通过在真空室内的第一表面上提供定向碳纳米管阵列将定向碳纳米管阵列从第一表面转移到第二表面的方法和装置，提供真空室内的第二表面分开 并且在所述第一表面和所述第二表面之间施加电位使得所述定向碳纳米管阵列从所述第一表面升华并且重新沉积在所述第二表面上。
-
7.发明申请公开(公告)号：US20080014443A1
公开(公告)日：2008-01-17
申请号：US11271571
申请日：2005-11-11
申请人： Anvar Zakhidov , Rashmi Nanjundaswamy , Sergey Li , Alexander Zakhidov , Mei Zhang , Ray Baughman
发明人： Anvar Zakhidov , Rashmi Nanjundaswamy , Sergey Li , Alexander Zakhidov , Mei Zhang , Ray Baughman
IPC分类号： B32B9/00
CPC分类号： B81C1/00111 , H01J9/025 , Y10S977/89 , Y10T428/30
摘要： The present invention provides a method and apparatus for transferring an array of oriented carbon nanotubes from a first surface to a second surface by providing the array of oriented carbon nanotubes on the first surface within a vacuum chamber, providing the second surface within the vacuum chamber separate from the first surface, and applying an electric potential between the first surface and the second surface such that the array of oriented carbon nanotubes are sublimed from the first surface and re-deposited on the second surface.
摘要翻译： 本发明提供了一种通过在真空室内的第一表面上提供定向碳纳米管阵列将定向碳纳米管阵列从第一表面转移到第二表面的方法和装置，提供真空室内的第二表面分开 并且在所述第一表面和所述第二表面之间施加电位使得所述定向碳纳米管阵列从所述第一表面升华并且重新沉积在所述第二表面上。
-
公开(公告)号：US09899616B2
公开(公告)日：2018-02-20
申请号：US14390692
申请日：2012-06-19
申请人： Bjoern Luessem , Alexander Zakhidov , Hans Kleeman , Karl Leo
发明人： Bjoern Luessem , Alexander Zakhidov , Hans Kleeman , Karl Leo
CPC分类号： H01L51/0562 , B82Y10/00 , H01L51/0002 , H01L51/001 , H01L51/002 , H01L51/0021 , H01L51/0046 , H01L51/0059 , H01L51/102 , H01L51/105
摘要： The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.
-
9.发明授权Orthogonal processing of organic materials used in electronic and electrical devices 有权用于电子和电气设备的有机材料的正交处理公开(公告)号：US08846301B2
公开(公告)日：2014-09-30
申请号：US12994353
申请日：2009-05-21
申请人： Christopher K. Ober , George Malliaras , Jin-Kyun Lee , Alexander Zakhidov , Margarita Chatzichristidi , Priscilla Taylor
发明人： Christopher K. Ober , George Malliaras , Jin-Kyun Lee , Alexander Zakhidov , Margarita Chatzichristidi , Priscilla Taylor
CPC分类号： G03F7/20 , G03F7/0046 , G03F7/0048 , G03F7/0392 , G03F7/16 , G03F7/30 , G03F7/325 , G03F7/40 , H01L51/0018 , Y02E10/549 , Y10T428/24802
摘要： An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.
摘要翻译： 公开了一种用于光刻图案化有机结构的正交方法。 所公开的方法使用氟化溶剂或超临界CO 2作为溶剂，使得有机导体和半导体的性能不会受其它侵蚀性溶剂的不利影响。 一种公开的方法也可以与HFE溶剂一起使用氟化光致抗蚀剂，但也可以使用其它氟化溶剂。 在一个实施方案中，氟化光致抗蚀剂是间苯二酚，但是也可以使用各种氟化聚合物光致抗蚀剂和氟化分子玻璃光致抗蚀剂。 例如，甲基丙烯酸全氟癸基酯共聚物（FDMA）和甲基丙烯酸2-硝基苄酯（NBMA）是在光刻工艺中与氟化溶剂和超临界二氧化碳一起使用的合适的正交氟化光致抗蚀剂。 氟化光致抗蚀剂和氟化溶剂的组合提供了通过本领域已知的方法或装置尚未实现的鲁棒的正交方法。
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.018 秒)
