公开(公告)号：US20060158760A1

公开(公告)日：2006-07-20

申请号：US10863635

申请日：2004-06-07

申请人： Michele Portico Ambrosio ,  Maria Maglione ,  Maria Bevilacqua ,  Luigi Occhipinti ,  Salvatore Coffa ,  Salvatore Castorina

发明人： Michele Portico Ambrosio ,  Maria Maglione ,  Maria Bevilacqua ,  Luigi Occhipinti ,  Salvatore Coffa ,  Salvatore Castorina

IPC分类号： G02B5/08

CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C13/04 ,  G11C13/047

摘要： Described herein is an optically controlled electrical-switch device which includes a first current-conduction terminal and a second current-conduction terminal, and a carbon nanotube connected between the first and the second current-conduction terminals, the carbon nanotube being designed to be impinged upon by electromagnetic radiation and having an electrical conductivity that can be varied by varying the polarization of the electromagnetic radiation incident thereon. In particular, the carbon nanotube may for example, in given conditions of electrical biasing, present a high electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially parallel to the axis of the carbon nanotube itself, and a reduced electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially orthogonal to the axis of the carbon nanotube itself.

摘要翻译： 这里描述的是一种光学控制的电气开关装置，其包括第一导电端子和第二导通端子以及连接在第一和第二电流传导端子之间的碳纳米管，碳纳米管设计成被撞击 通过电磁辐射并且具有可以通过改变入射在其上的电磁辐射的极化而改变的电导率。 特别地，碳纳米管可以例如在给定的电偏置条件下，当其受到具有给定波长的电磁辐射和基本上平行于碳纳米管本身的极化的极化的冲击时，呈现高导电性，并且 当具有给定波长的电磁辐射和与碳纳米管本身的轴线基本正交的极化时，其导电性降低。

公开(公告)号：US20050017251A1

公开(公告)日：2005-01-27

申请号：US10867569

申请日：2004-06-14

申请人： Vincenzo Vinciguerra ,  Francesco Buonocore ,  Maria Bevilacqua ,  Salvatore Coffa

发明人： Vincenzo Vinciguerra ,  Francesco Buonocore ,  Maria Bevilacqua ,  Salvatore Coffa

IPC分类号： H01L33/18 ,  H01L33/24 ,  H01L51/30 ,  H01L27/15

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/18 ,  H01L33/24 ,  Y10S977/75

摘要： The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.

摘要翻译： 本发明涉及利用半导体单壁碳纳米管（SWNT）的新型发光体。 给出了实验证明，在标准硅技术中，如何设计在红外线IR中发射的发光二极管（LED），其中发光是由半导体单壁碳纳米管（SWNTs）上的电子和空穴的辐射复合引起的， LED）。 我们还将展示如何实现这些SWNTs-LED，以便基于SWNT的发射性质建立激光源。 还给出了这种装置的制造过程的描述。