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1.发明申请IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers 有权基于SWNT（单壁碳纳米管）的IR发光体，半导体SWNTs发光二极管和激光器公开(公告)号：US20050017251A1
公开(公告)日：2005-01-27
申请号：US10867569
申请日：2004-06-14
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y20/00 , H01L33/18 , H01L33/24 , Y10S977/75
摘要： The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.
摘要翻译： 本发明涉及利用半导体单壁碳纳米管（SWNT）的新型发光体。 给出了实验证明，在标准硅技术中，如何设计在红外线IR中发射的发光二极管（LED），其中发光是由半导体单壁碳纳米管（SWNTs）上的电子和空穴的辐射复合引起的， LED）。 我们还将展示如何实现这些SWNTs-LED，以便基于SWNT的发射性质建立激光源。 还给出了这种装置的制造过程的描述。
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2.发明授权Method of forming light emitting devices comprising semiconducting single walled carbon nanotubes 有权形成包含半导体单壁碳纳米管的发光器件的方法公开(公告)号：US08008102B2
公开(公告)日：2011-08-30
申请号：US11958858
申请日：2007-12-18
IPC分类号： H01L51/50
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y20/00 , H01L33/18 , H01L33/24 , Y10S977/75
摘要： The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.
摘要翻译： 本发明涉及利用半导体单壁碳纳米管（SWNT）的新型发光体。 给出了实验证明，在标准硅技术中，如何设计在红外线IR中发射的发光二极管（LED），其中发光是由半导体单壁碳纳米管（SWNTs）上的电子和空穴的辐射复合引起的， LED）。 我们还将展示如何实现这些SWNTs-LED，以便基于SWNT的发射性质建立激光源。 还给出了这种装置的制造过程的描述。
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3.发明申请IR-LIGHT EMITTERS BASED ON SWNT'S (SINGLE WALLED CARBON NANOTUBES), SEMICONDUCTING SWNTS-LIGHT EMITTING DIODES AND LASERS 有权基于SWNT（单壁碳纳米管）的红外发光体，半导体发光二极管和激光公开(公告)号：US20090011529A1
公开(公告)日：2009-01-08
申请号：US11958858
申请日：2007-12-18
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y20/00 , H01L33/18 , H01L33/24 , Y10S977/75
摘要： The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.
摘要翻译： 本发明涉及利用半导体单壁碳纳米管（SWNT）的新型发光体。 给出了实验证明，在标准硅技术中，如何设计在红外线IR中发射的发光二极管（LED），其中发光是由半导体单壁碳纳米管（SWNTs）上的电子和空穴的辐射复合引起的， LED）。 我们还将展示如何实现这些SWNTs-LED，以便基于SWNT的发射性质建立激光源。 还给出了这种装置的制造过程的描述。
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公开(公告)号：US08470283B2
公开(公告)日：2013-06-25
申请号：US11913476
申请日：2006-05-03
IPC分类号： D01F9/12
CPC分类号： H01L21/76838 , B82Y30/00 , B82Y40/00 , C01B32/16 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method for growing carbon nanotubes having a determined chirality includes fragmenting at least one initial carbon nanotube having a determined chirality to obtain at least two portions of carbon nanotube. Each portion has a free growth end. Atoms of carbon are supplied with an autocatalyst addition of the atoms of carbon at the free growth end of each portion of nanotube to determine an elongation or growth of the nanotube.
摘要翻译： 用于生长具有确定的手性的碳纳米管的方法包括将具有确定的手性的至少一个初始碳纳米管片段化，以获得至少两部分碳纳米管。 每个部分都有一个自由增长的终点。 在碳纳米管的每个部分的自由生长末端，碳原子被自动催化剂添加碳原子以确定纳米管的伸长或生长。
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5.发明申请公开(公告)号：US20090060827A1
公开(公告)日：2009-03-05
申请号：US11913476
申请日：2006-05-03
CPC分类号： H01L21/76838 , B82Y30/00 , B82Y40/00 , C01B32/16 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method for growing carbon nanotubes having a determined chirality includes fragmenting at least one initial carbon nanotube having a determined chirality to obtain at least two portions of carbon nanotube. Each portion has a free growth end. Atoms of carbon are supplied with an autocatalyst addition of the atoms of carbon at the free growth end of each portion of nanotube to determine an elongation or growth of the nanotube.
摘要翻译： 用于生长具有确定的手性的碳纳米管的方法包括将具有确定的手性的至少一个初始碳纳米管片段化以获得至少两部分碳纳米管。 每个部分都有一个自由增长的终点。 在碳纳米管的每个部分的自由生长末端，碳原子被自动催化剂添加碳原子以确定纳米管的伸长或生长。
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6.发明授权IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers 有权基于SWNT（单壁碳纳米管）的IR发光体，半导体SWNTs发光二极管和激光器公开(公告)号：US07329902B2
公开(公告)日：2008-02-12
申请号：US10867569
申请日：2004-06-14
IPC分类号： H01L27/15
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y20/00 , H01L33/18 , H01L33/24 , Y10S977/75
摘要： The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.
摘要翻译： 本发明涉及利用半导体单壁碳纳米管（SWNT）的新型发光体。 给出了实验证明，在标准硅技术中，如何设计在红外线IR中发射的发光二极管（LED），其中发光是由半导体单壁碳纳米管（SWNTs）上的电子和空穴的辐射复合引起的， LED）。 我们还将展示如何实现这些SWNTs-LED，以便基于SWNT的发射性质建立激光源。 还给出了这种装置的制造过程的描述。
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7.发明授权Molecular memory obtained using DNA strand molecular switches and carbon nanotubes, and method for manufacturing the same 有权使用DNA链分子开关和碳纳米管获得的分子记忆及其制造方法公开(公告)号：US07272511B2
公开(公告)日：2007-09-18
申请号：US10601327
申请日：2003-06-19
申请人： Luigi Occhipinti , Francesco Buonocore , Vincenzo Vinciguerra , Gianguido Rizzotto , Giuseppe Panzera , Floriana San Biagio , Francesco Italia
发明人： Luigi Occhipinti , Francesco Buonocore , Vincenzo Vinciguerra , Gianguido Rizzotto , Giuseppe Panzera , Floriana San Biagio , Francesco Italia
CPC分类号： G11C13/025 , B82Y10/00 , G06N3/123 , G11C13/0014 , G11C13/0019 , G11C2213/77 , G11C2213/81 , H01L27/28 , H01L51/0048 , H01L51/0093 , H01L51/0595 , Y10S977/855 , Y10S977/885
摘要： Described herein are a molecular memory obtained using DNA strand molecular switches and carbon nanotubes, and a manufacturing method thereof. In particular, the nonvolatile memory is manufactured according to an architecture that envisages the use of carbon nanotubes as electrical connectors and DNA strands as physical means on which to write the information. In other words, the nonvolatile memory is made by means of a set of molecular DNA strand switches, the addressing of which is controlled by molecular wires made up of carbon nanotubes.
摘要翻译： 本文描述了使用DNA链分子开关和碳纳米管获得的分子记忆及其制造方法。 特别地，非易失性存储器是根据设计将碳纳米管用作电连接器和DNA链的结构来制造的，作为在其上写入信息的物理手段。 换句话说，非易失性存储器是通过一组分子DNA链开关制成的，其分配线由碳纳米管组成的分子线控制。
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