公开(公告)号：US06569294B1

公开(公告)日：2003-05-27

申请号：US09884482

申请日：2001-06-20

申请人： Alexander Boris Khazanov ,  Shanghsien Rou ,  Jie-Ming Yu ,  Paul Stephen McLeod ,  Mark Anthony Shows ,  Kuo-Hsing Hwang ,  Chung-Yuang Shih

发明人： Alexander Boris Khazanov ,  Shanghsien Rou ,  Jie-Ming Yu ,  Paul Stephen McLeod ,  Mark Anthony Shows ,  Kuo-Hsing Hwang ,  Chung-Yuang Shih

IPC分类号： C23C1434

CPC分类号： C23C14/3407 ,  H01J37/3414 ,  Y02T50/67

摘要： Selective deposition of a layer of a material, such as a thick protective overcoat, onto a selected substrate area, such as the inner or CSS landing zone, is achieved using a sputtering target assembly comprising a target/cathode having a planar sputtering surface including an erosion track area, a collimating shield positioned proximate the sputtering surface and surrounding at least a portion of the erosion track area, the collimating shield including an inwardly facing wall, and a blocking shield centrally positioned over the surface of the target/cathode and including an outwardly facing wall, wherein the inwardly facing wall of the collimating shield and the outwardly facing wall, wherein the inwardly facing wall of the collimating shield and the outwardly facing wall of the central blocking shield form an open-ended collimating channel for directing sputtered particles onto the selected substrate area.

摘要翻译： 使用包括具有平面溅射表面的靶/阴极的溅射靶组件来选择性地沉积诸如厚保护外涂层的材料层到所选择的衬底区域（例如内部或CSS着陆区域），溅射靶组件包括平面溅射表面 冲蚀轨道区域，位于溅射表面附近并围绕侵蚀轨迹区域的至少一部分的准直屏蔽，准直屏蔽包括面向内的壁和位于靶/阴极表面上方的阻挡屏蔽， 准直屏蔽面向内的壁和面向外的壁，其中准直屏蔽件的面向内的壁和中央阻挡屏蔽的面向外的壁形成用于引导溅射的颗粒进入的开放式准直通道 所选择的衬底区域。

公开(公告)号：US06468405B1

公开(公告)日：2002-10-22

申请号：US09615317

申请日：2000-07-13

申请人： Shanghsien Rou ,  Alexander Boris Khazanov ,  Jie-Ming Yu ,  Paul Stephen McLeod ,  Mark Anthony Shows ,  Kuo-Hsing Hwang ,  Chung-Yuang Shih

发明人： Shanghsien Rou ,  Alexander Boris Khazanov ,  Jie-Ming Yu ,  Paul Stephen McLeod ,  Mark Anthony Shows ,  Kuo-Hsing Hwang ,  Chung-Yuang Shih

IPC分类号： C23C1434

CPC分类号： H01J37/3414 ,  C23C14/3407 ,  Y02T50/67

摘要： A sputtering target assembly for depositing onto a selected substrate area comprises a target/cathode having a planar sputtering surface including an erosion track area, a collimating shield positioned proximate to the sputtering surface, surrounding at least a portion of the erosion track area, and including an inwardly facing wall, and a blocking shield centrally positioned over the surface of the target/cathode and including an outwardly facing wall, wherein the inwardly facing wall of the collimating shield and the outwardly facing wall of the central blocking shield form an open-ended channel for directing sputtered particles onto the selected substrate area. A method for utilizing the target assembly for selectively depositing a thicker protective overcoat layer on the inner CSS or landing zone relative to the outer data zone of disk-shaped recording media is provided.

摘要翻译： 用于沉积到所选择的衬底区域上的溅射靶组件包括具有包括侵蚀轨迹区域的平面溅射表面的靶/阴极，位于溅射表面附近的准直屏蔽件，围绕侵蚀轨迹区域的至少一部分，并且包括 一个向内的壁和一个位于靶/阴极表面上方并包括向外的壁的阻挡屏蔽，其中准直屏蔽的向内的壁和中心阻挡屏蔽的面向外的壁形成开放端 用于将溅射的颗粒引导到所选择的基底区域上的通道。 提供了一种利用目标组件相对于盘形记录介质的外部数据区选择性地在内部CSS或着陆区上沉积更厚的保护性外涂层的方法。

公开(公告)号：US06526909B1

公开(公告)日：2003-03-04

申请号：US09532621

申请日：2000-03-22

申请人： Kevin John Grannen ,  Jeffrey Arthur McCann ,  Xiaoding Ma ,  Jing Gui ,  Mark Anthony Shows

发明人： Kevin John Grannen ,  Jeffrey Arthur McCann ,  Xiaoding Ma ,  Jing Gui ,  Mark Anthony Shows

IPC分类号： H05H100

CPC分类号： H01J37/3178

摘要： A device for increasing the incident energy of an ion for coating a disc in an ion beam deposition process. The ion beam deposition process is performed in a chamber with the disc to be coated disposed therein. An ion source, having a voltage level, is introduced into the chamber for generating an ion beam for depositing ions on the disc. A bias contact is coupled to the disc and a power supply is coupled to the bias contact. The power supply applies a voltage level to the bias contact that is less than the voltage level of the ion source thereby creating a negative bias voltage between the disc and the ion source. This negative bias voltage causes the incident energy of the ion to increase. As a result, the optimal incident energy can be achieved using a lower original energy.

摘要翻译： 一种用于在离子束沉积工艺中增加用于涂覆盘的离子的入射能的装置。 离子束沉积工艺在其中要涂覆的盘的腔室中进行。 具有电压电平的离子源被引入室中，用于产生用于在盘上沉积离子的离子束。 偏置触点耦合到盘，并且电源耦合到偏置触点。 电源对偏置触点施加小于离子源的电压电平的电压，从而在盘和离子源之间产生负偏置电压。 这种负偏压导致离子的入射能增加。 因此，可以使用更低的原始能量来实现最佳的入射能量。

公开(公告)号：US06482301B1

公开(公告)日：2002-11-19

申请号：US09326245

申请日：1999-06-04

申请人： Qixu Chen ,  Charles Leu ,  Mark Anthony Shows ,  Paul Stephen McLeod ,  Rajiv Yadav Ranjan

发明人： Qixu Chen ,  Charles Leu ,  Mark Anthony Shows ,  Paul Stephen McLeod ,  Rajiv Yadav Ranjan

IPC分类号： C23C1432

CPC分类号： G11B5/851 ,  C23C14/34 ,  H01J37/34 ,  H01J37/3447

摘要： A collimator system is disclosed for use in an in-line pass-by sputtering system during the fabrication of recording media to improve the data storage density and read/write performance characteristics of the media. The collimator system includes a collimator shield and a collimator honeycomb. The shield includes a rectangular tube having a flange and a frame at inner and outer ends, respectively. The various components of the shield in part serve to prevent possible contamination of substrates due to target atom accumulation on the chamber walls during the sputtering process. The collimator honeycomb is provided for blocking target atoms from contacting the substrate at low incident angles. The collimator honeycomb is comprised of a plurality of collimators which are identical to each other. In a preferred embodiment, the collimators have a hexagonal cross-section taken from a perspective perpendicular to the substrate. The collimators may also have other geometric shapes. It is also contemplated that more than one collimator honeycomb level be used in alternative embodiments.

摘要翻译： 在制造记录介质期间公开了一种用于在线传递溅射系统的准直器系统，以改善数据存储密度和读/写性能特性。 准直仪系统包括准直器屏蔽和准直器蜂窝。 护罩包括分别在内端和外端具有凸缘和框架的矩形管。 屏蔽件的各种部件部分地用于防止在溅射过程期间由于靶室原子在室壁上的积聚而引起的基板的可能污染。 提供准直器蜂窝用于阻止目标原子以低入射角接触基板。 准直器蜂窝体由多个彼此相同的准直器构成。 在优选实施例中，准直器具有垂直于衬底的透视图的六边形截面。 准直器也可以具有其他几何形状。 还可以想到，在替代实施例中可以使用多于一个准直器蜂窝等级。

公开(公告)号：US06286453B1

公开(公告)日：2001-09-11

申请号：US09532620

申请日：2000-03-22

申请人： Kevin John Grannen ,  Jeffrey Arthur McCann ,  Xiaoding Ma ,  Jing Gui ,  Mark Anthony Shows

发明人： Kevin John Grannen ,  Jeffrey Arthur McCann ,  Xiaoding Ma ,  Jing Gui ,  Mark Anthony Shows

IPC分类号： C23C1600

CPC分类号： C23C14/564 ,  C23C14/56 ,  H01J37/3178 ,  H01J2237/022 ,  Y10S156/916

摘要： A device for reducing the contamination of a disc being coated during an ion beam deposition process. The ion beam deposition process is performed in a chamber having an upper portion and a lower portion with the disc being disposed in the lower portion of the chamber. An ion source is introduced into the lower chamber for generating an ion beam for depositing ions on the disc. In the upper portion of the chamber is a pump for creating negative pressure in the chamber. A portion of the ion beam contacts the pump forming contaminants on the pump which cause the contamination of the disc. A baffle assembly is disposed in the chamber between the pump and the ion source. Said baffle assembly includes a baffle that reduces the portion of the ion beam contacting said pump thereby reducing the forming of contaminants on the pump. The baffle assembly also includes a baffle cap disposed above the disc so that when the contaminants dislodge from the pump, the baffle cap prevents the contaminants from contaminating said disc.

摘要翻译： 一种用于减少在离子束沉积过程中被涂覆的盘的污染的装置。 离子束沉积工艺在具有上部和下部的腔室中执行，其中盘被设置在腔室的下部。 离子源被引入下室，用于产生用于在盘上沉积离子的离子束。 在室的上部是用于在室中产生负压的泵。 离子束的一部分接触泵，在泵上形成污染物，导致盘的污染。 挡板组件设置在泵和离子源之间的腔室中。 所述挡板组件包括挡板，其减少了接触所述泵的离子束的部分，从而减少了泵上污染物的形成。 挡板组件还包括设置在盘上方的挡板盖，使得当污染物从泵移出时，挡板盖防止污染物污染所述盘。