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公开(公告)号：US08911528B2
公开(公告)日：2014-12-16
申请号：US12917668
申请日：2010-11-02
申请人： Mark E. Gaydos , Prabhat Kumar , Steve Miller , Norman C. Mills , Gary Rozak , Rong-Chein Richard Wu
发明人： Mark E. Gaydos , Prabhat Kumar , Steve Miller , Norman C. Mills , Gary Rozak , Rong-Chein Richard Wu
CPC分类号： C23C14/3414 , B22F3/15 , B22F2998/00 , B22F2998/10 , C22C1/045 , B22F5/006 , B22F1/0003 , B22F3/02 , B22F3/1208 , B22F3/04
摘要： Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the β(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase β(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.
摘要翻译： 提供钼钛溅射靶。 在一个方面，目标基本上不含（Ti，Mo）合金相。 另一方面，靶基本上由单相（Ti，Mo）合金构成。 在这两个方面，溅射中的颗粒发射减少。 还提供了制备目标的方法，将靶标结合在一起以产生大面积溅射靶的方法，以及由靶产生的膜。
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公开(公告)号：US20110117375A1
公开(公告)日：2011-05-19
申请号：US12827562
申请日：2010-06-30
CPC分类号： H01J37/3429 , B22F2998/10 , C03C17/40 , C22C1/045 , C22C27/04 , C23C14/0688 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/3407 , C23C14/3414 , C23C14/3492 , C23C14/35 , C23C14/548 , C23C14/5873 , C23G1/106 , C23G1/205 , G06F3/044 , G06F2203/04103 , Y10T428/12014 , Y10T428/12021 , Y10T428/12597 , Y10T428/31678 , B22F1/0003 , B22F3/02 , B22F3/18
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
摘要翻译： 本发明涉及包括50原子％或更多的钼，钛的第二金属元素和铬或钽的第三金属元素以及由溅射靶制备的沉积膜的溅射靶。 在本发明的优选方面，溅射靶包括富含钼的相，富含钛的相和富含第三金属元素的相。
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公开(公告)号：US08449817B2
公开(公告)日：2013-05-28
申请号：US12827550
申请日：2010-06-30
CPC分类号： C23C14/185 , B22F2998/10 , C22C1/045 , C22C27/04 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F1/0003 , B22F3/15
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
摘要翻译： 本发明涉及包括50原子％或更多的钼，铌或钒的第二金属元素和选自钛，铬，铌，钒和钽的第三金属元素的溅射靶，其中第三金属 元素不同于第二金属元素，以及由溅射靶制备的沉积膜。 在本发明的优选方面，溅射靶包括富含钼的相，富含第二金属元素的相和富含第三金属元素的相。
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公开(公告)号：US20110097236A1
公开(公告)日：2011-04-28
申请号：US12917668
申请日：2010-11-02
申请人： Mark E. Gaydos , Prabhat Kumar , Steve Miller , Norman C. Mills , Gary Rozak , Rong-Chein Richard Wu
发明人： Mark E. Gaydos , Prabhat Kumar , Steve Miller , Norman C. Mills , Gary Rozak , Rong-Chein Richard Wu
CPC分类号： C23C14/3414 , B22F3/15 , B22F2998/00 , B22F2998/10 , C22C1/045 , B22F5/006 , B22F1/0003 , B22F3/02 , B22F3/1208 , B22F3/04
摘要： Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the β(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase β(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.
摘要翻译： 提供钼钛溅射靶。 在一个方面，目标基本上不含（Ti，Mo）合金相。 另一方面，靶基本上由单相（Ti，Mo）合金构成。 在这两个方面，溅射中的颗粒发射减少。 还提供了制备目标的方法，将靶标结合在一起以产生大面积溅射靶的方法，以及由靶产生的膜。
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公开(公告)号：US08449818B2
公开(公告)日：2013-05-28
申请号：US12827562
申请日：2010-06-30
CPC分类号： H01J37/3429 , B22F2998/10 , C03C17/40 , C22C1/045 , C22C27/04 , C23C14/0688 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/3407 , C23C14/3414 , C23C14/3492 , C23C14/35 , C23C14/548 , C23C14/5873 , C23G1/106 , C23G1/205 , G06F3/044 , G06F2203/04103 , Y10T428/12014 , Y10T428/12021 , Y10T428/12597 , Y10T428/31678 , B22F1/0003 , B22F3/02 , B22F3/18
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
摘要翻译： 本发明涉及包括50原子％或更多的钼，钛的第二金属元素和铬或钽的第三金属元素以及由溅射靶制备的沉积膜的溅射靶。 在本发明的优选方面，溅射靶包括富含钼的相，富含钛的相和富含第三金属元素的相。
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公开(公告)号：US09334562B2
公开(公告)日：2016-05-10
申请号：US13467323
申请日：2012-05-09
申请人： Gary Alan Rozak , Mark E. Gaydos
发明人： Gary Alan Rozak , Mark E. Gaydos
CPC分类号： H01J37/3429 , B22F1/0003 , B22F3/15 , B22F3/24 , B22F2003/153 , B22F2003/247 , B22F2301/20 , B22F2998/10 , C22C27/04 , C23C14/3407 , C23C14/3414 , H01J37/3491
摘要： A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.
摘要翻译： 包括至少两个固结块的溅射靶，每个块包括含量大于约30重量％的钼和至少一种另外的合金成分的合金; 以及所述至少两个固结块之间的接头，所述接头由于添加的粘合剂（例如，粉末，箔或其它物质）而没有任何微结构，并且基本上没有任何可见的接合线，所述目标大于约 200μm宽度（例如，小于约50μm宽）。 制造目标的方法包括在1080℃以下的热等静压，在压制之前可以表面制备（例如粗糙化至预定粗糙度值）的固结的执行块。
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公开(公告)号：US20120285826A1
公开(公告)日：2012-11-15
申请号：US13467323
申请日：2012-05-09
申请人： Gary Alan Rozak , Mark E. Gaydos
发明人： Gary Alan Rozak , Mark E. Gaydos
CPC分类号： H01J37/3429 , B22F1/0003 , B22F3/15 , B22F3/24 , B22F2003/153 , B22F2003/247 , B22F2301/20 , B22F2998/10 , C22C27/04 , C23C14/3407 , C23C14/3414 , H01J37/3491
摘要： A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.
摘要翻译： 包括至少两个固结块的溅射靶，每个块包括含量大于约30重量％的钼和至少一种另外的合金成分的合金; 以及所述至少两个固结块之间的接头，所述接头由于添加的粘合剂（例如，粉末，箔或其它物质）而没有任何微结构，并且基本上没有任何可见的接合线，所述目标大于约 200μm宽度（例如，小于约50μm宽）。 制造目标的方法包括在1080℃以下的热等静压，在压制之前可以表面制备（例如粗糙化至预定粗糙度值）的固结的执行块。
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公开(公告)号：US20120003486A1
公开(公告)日：2012-01-05
申请号：US12827550
申请日：2010-06-30
CPC分类号： C23C14/185 , B22F2998/10 , C22C1/045 , C22C27/04 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F1/0003 , B22F3/15
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
摘要翻译： 本发明涉及包括50原子％或更多的钼，铌或钒的第二金属元素和选自钛，铬，铌，钒和钽的第三金属元素的溅射靶，其中第三金属 元素不同于第二金属元素，以及由溅射靶制备的沉积膜。 在本发明的优选方面，溅射靶包括富含钼的相，富含第二金属元素的相和富含第三金属元素的相。
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