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公开(公告)号：US08449818B2
公开(公告)日：2013-05-28
申请号：US12827562
申请日：2010-06-30
CPC分类号： H01J37/3429 , B22F2998/10 , C03C17/40 , C22C1/045 , C22C27/04 , C23C14/0688 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/3407 , C23C14/3414 , C23C14/3492 , C23C14/35 , C23C14/548 , C23C14/5873 , C23G1/106 , C23G1/205 , G06F3/044 , G06F2203/04103 , Y10T428/12014 , Y10T428/12021 , Y10T428/12597 , Y10T428/31678 , B22F1/0003 , B22F3/02 , B22F3/18
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
摘要翻译： 本发明涉及包括50原子％或更多的钼，钛的第二金属元素和铬或钽的第三金属元素以及由溅射靶制备的沉积膜的溅射靶。 在本发明的优选方面，溅射靶包括富含钼的相，富含钛的相和富含第三金属元素的相。
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公开(公告)号：US08449817B2
公开(公告)日：2013-05-28
申请号：US12827550
申请日：2010-06-30
CPC分类号： C23C14/185 , B22F2998/10 , C22C1/045 , C22C27/04 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F1/0003 , B22F3/15
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
摘要翻译： 本发明涉及包括50原子％或更多的钼，铌或钒的第二金属元素和选自钛，铬，铌，钒和钽的第三金属元素的溅射靶，其中第三金属 元素不同于第二金属元素，以及由溅射靶制备的沉积膜。 在本发明的优选方面，溅射靶包括富含钼的相，富含第二金属元素的相和富含第三金属元素的相。
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公开(公告)号：US20110117375A1
公开(公告)日：2011-05-19
申请号：US12827562
申请日：2010-06-30
CPC分类号： H01J37/3429 , B22F2998/10 , C03C17/40 , C22C1/045 , C22C27/04 , C23C14/0688 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/3407 , C23C14/3414 , C23C14/3492 , C23C14/35 , C23C14/548 , C23C14/5873 , C23G1/106 , C23G1/205 , G06F3/044 , G06F2203/04103 , Y10T428/12014 , Y10T428/12021 , Y10T428/12597 , Y10T428/31678 , B22F1/0003 , B22F3/02 , B22F3/18
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
摘要翻译： 本发明涉及包括50原子％或更多的钼，钛的第二金属元素和铬或钽的第三金属元素以及由溅射靶制备的沉积膜的溅射靶。 在本发明的优选方面，溅射靶包括富含钼的相，富含钛的相和富含第三金属元素的相。
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公开(公告)号：US20120003486A1
公开(公告)日：2012-01-05
申请号：US12827550
申请日：2010-06-30
CPC分类号： C23C14/185 , B22F2998/10 , C22C1/045 , C22C27/04 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F1/0003 , B22F3/15
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
摘要翻译： 本发明涉及包括50原子％或更多的钼，铌或钒的第二金属元素和选自钛，铬，铌，钒和钽的第三金属元素的溅射靶，其中第三金属 元素不同于第二金属元素，以及由溅射靶制备的沉积膜。 在本发明的优选方面，溅射靶包括富含钼的相，富含第二金属元素的相和富含第三金属元素的相。
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