公开(公告)号：US20100101602A1

公开(公告)日：2010-04-29

申请号：US12582905

申请日：2009-10-21

申请人： Martin Deehan ,  Matt Cheng-Hsiung Tsai ,  Nan Lu ,  David T. Or ,  Mei Chang

发明人： Martin Deehan ,  Matt Cheng-Hsiung Tsai ,  Nan Lu ,  David T. Or ,  Mei Chang

IPC分类号： C25F1/00 ,  B65D51/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  H01L21/67069

摘要： Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. Periodically, a PVD chamber may need to be cleaned to remove material that has built up in undesired locations within the chamber. Additionally, the sputtering target may need to be replaced. By removing the sputtering target and placing a grounded chamber lid in its place, the chamber may be plasma cleaned. The susceptor within the chamber may be electrically biased with an RF current. A stationary magnet assembly may be substantially centered behind the grounded lid to focus the cleaning plasma on the susceptor. Following the plasma cleaning, the magnet and lid may be removed and the sputtering target may be coupled to the chamber to continue processing.

摘要翻译： 本发明的实施例通常包括用于等离子体清洗的装置和等离子体清洗方法。 定期地，可能需要清洁PVD室以除去已经积聚在室内不期望的位置的材料。 此外，可能需要更换溅射靶。 通过去除溅射靶并将接地的室盖放置在其位置，可以对腔室进行等离子体清洁。 室内的基座可以用RF电流电偏置。 固定磁体组件可以基本上位于接地盖的后面，以将清洁等离子体聚焦在基座上。 在等离子体清洁之后，可以去除磁体和盖子，并且溅射靶可以连接到腔室以继续加工。

公开(公告)号：US20140283872A1

公开(公告)日：2014-09-25

申请号：US14277010

申请日：2014-05-13

申请人： Martin DEEHAN ,  Matt Cheng-Hsiung TSAI ,  Nan LU ,  David T. OR ,  Mei CHANG

发明人： Martin DEEHAN ,  Matt Cheng-Hsiung TSAI ,  Nan LU ,  David T. OR ,  Mei CHANG

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  H01L21/67069

摘要： Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. Periodically, a PVD chamber may need to be cleaned to remove material that has built up in undesired locations within the chamber. Additionally, the sputtering target may need to be replaced. By removing the sputtering target and placing a grounded chamber lid in its place, the chamber may be plasma cleaned. The susceptor within the chamber may be electrically biased with an RF current. A stationary magnet assembly may be substantially centered behind the grounded lid to focus the cleaning plasma on the susceptor. Following the plasma cleaning, the magnet and lid may be removed and the sputtering target may be coupled to the chamber to continue processing.

摘要翻译： 本发明的实施例通常包括用于等离子体清洗的装置和等离子体清洗方法。 定期地，可能需要清洁PVD室以除去已经积聚在室内不期望的位置的材料。 此外，可能需要更换溅射靶。 通过去除溅射靶并将接地的室盖放置在其位置，可以对腔室进行等离子体清洁。 室内的基座可以用RF电流电偏置。 固定磁体组件可以基本上位于接地盖的后面，以将清洁等离子体聚焦在基座上。 在等离子体清洁之后，可以去除磁体和盖子，并且溅射靶可以连接到腔室以继续加工。

公开(公告)号：US08721796B2

公开(公告)日：2014-05-13

申请号：US12582905

申请日：2009-10-21

申请人： Martin Deehan ,  Matt Cheng-Hsiung Tsai ,  Nan Lu ,  David T. Or ,  Mei Chang

发明人： Martin Deehan ,  Matt Cheng-Hsiung Tsai ,  Nan Lu ,  David T. Or ,  Mei Chang

IPC分类号： B08B6/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  H01L21/67069

摘要： Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. The apparatus can include a lid body having a first surface for facing a pedestal during cleaning and a second surface opposite the first surface and substantially parallel to the first surface, the second surface having a first indentation sized to receive a magnet assembly, one or more handles coupled to the second surface of the lid body, and the magnet assembly resting in the first indentation. The method can include removing a sputtering target from the processing chamber, sealing the processing chamber, introducing a gas into the processing chamber, applying an RF bias to a pedestal within the processing chamber, maintaining the pedestal at a substantially constant temperature, and removing material from the pedestal to clean the pedestal.

摘要翻译： 本发明的实施例通常包括用于等离子体清洗的装置和等离子体清洗方法。 该装置可以包括盖体，其具有用于在清洁期间面对基座的第一表面和与第一表面相对的第二表面并且基本上平行于第一表面，第二表面具有第一压痕，其尺寸设置成接收磁体组件，一个或多个 联接到盖体的第二表面的手柄，以及静止在第一压痕中的磁体组件。 该方法可以包括从处理室移除溅射靶，密封处理室，将气体引入处理室，向处理室内的基座施加RF偏压，将基座保持在基本恒定的温度，以及去除材料 从基座上清洁基座。