公开(公告)号：US5391257A

公开(公告)日：1995-02-21

申请号：US165050

申请日：1993-12-10

申请人： Gerard J. Sullivan ,  Mary K. Szwed ,  Mau-Chung F. Chang

发明人： Gerard J. Sullivan ,  Mary K. Szwed ,  Mau-Chung F. Chang

IPC分类号： H01L21/762 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/76256 ,  H01L21/76251 ,  H01L2221/68322 ,  H01L2221/68363 ,  Y10S117/915 ,  Y10S438/977

摘要： A method is described for transferring a thin film of arbitrarily large area from an original substrate to an alternate substrate. An etch stop layer is provided below an epitaxial layer, for example, grown on a semiconductor substrate. In a single transfer process, the epitaxial layer is bonded to a rigid host substrate having desirable thermal, electromagnetic, and/or mechanical properties. The original growth substrate is then removed from the transferred epitaxial layer using the etch stop layer. In a double transfer process, the epitaxial layer is first bonded to a rigid and porous temporary substrate using a thermally or chemically releasable resin, for example. The original growth substrate is removed using the etch stop layer so that the original substrate side of the epitaxial layer can be bonded to a rigid host substrate, as described above. The temporary substrate is then removed using the releasable resin to leave the transferred thin film attached to the host substrate.

摘要翻译： 描述了用于将任意大面积的薄膜从原始衬底转移到替代衬底的方法。 例如，在半导体衬底上生长的外延层下面提供蚀刻停止层。 在单次转移过程中，外延层被结合到具有期望的热，电磁和/或机械性能的刚性主体衬底上。 然后使用蚀刻停止层从转移的外延层去除原始生长衬底。 在双重转移过程中，例如，外延层首先使用热或化学上可释放的树脂结合到刚性和多孔的临时衬底上。 如上所述，使用蚀刻停止层去除原始生长衬底，使得外延层的原始衬底侧可以结合到刚性主体衬底。 然后使用可释放树脂除去临时衬底，以使转移的薄膜附着到主体衬底上。