公开(公告)号：US20100099241A1

公开(公告)日：2010-04-22

申请号：US12560265

申请日：2009-09-15

申请人： Masahiko MURANO ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

发明人： Masahiko MURANO ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02661 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在氢气气氛中，在压力为第一压力和温度为的条件下，除去天然氧化物膜并将硅氮化物粘附在Si基衬底的区域上 第一温度，在所述Si基衬底上形成含氮化硅的构件，所述区域是未被构件覆盖的区域; 将温度从第一温度降低到第二温度，同时保持在氢气气氛中的第一压力下的压力; 将压力从第一压力降低到第二压力，同时将温度保持在第二温度在氢气气氛中; 并且在所述压力降低到所述第二压力之后，在所述Si基基板的所述Si基基板的区域上外延生长晶体，所述晶体包括Si和Ge中的至少一种，所述前体气体气体包括氢， Si和Ge。

公开(公告)号：US08012858B2

公开(公告)日：2011-09-06

申请号：US12560265

申请日：2009-09-15

申请人： Masahiko Murano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

发明人： Masahiko Murano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02661 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在氢气气氛中，在压力为第一压力和温度为的条件下，除去天然氧化物膜并将硅氮化物粘附在Si基衬底的区域上 第一温度，在所述Si基衬底上形成含氮化硅的构件，所述区域是未被构件覆盖的区域; 将温度从第一温度降低到第二温度，同时保持在氢气气氛中的第一压力下的压力; 将压力从第一压力降低到第二压力，同时将温度保持在第二温度在氢气气氛中; 并且在所述压力降低到所述第二压力之后，在前驱体气体气氛中，在所述Si基基板的区域上外延生长晶体，所述晶体包括Si和Ge中的至少一种，所述前体气体气体包括氢， Si和Ge。

公开(公告)号：US06772045B2

公开(公告)日：2004-08-03

申请号：US10231019

申请日：2002-08-30

申请人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

发明人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

IPC分类号： G06F1900

CPC分类号： H04L12/66 ,  Y10S438/905

摘要： A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.

摘要翻译： 一种用于确定干洗时间的系统，包括：制造装置，被配置为处理由批次序列分配的材料; 设备控制器，其被配置为控制所述制造设备并获得所述制造设备的操作条件作为设备信息; 许多信息输入终端，被配置为获取所述批中的一个的处理条件作为批量信息; 设备信息存储单元，被配置为将来自设备控制器的设备信息作为设备信息数据库存储; 许多信息存储单元被配置为将来自批次信息输入终端的批量信息作为批次信息数据库存储; 以及清洁确定单元，被配置为基于装置信息数据库和批次信息数据库来确定对制造装置进行干洗的定时。

公开(公告)号：US06929991B2

公开(公告)日：2005-08-16

申请号：US10775065

申请日：2004-02-11

申请人： Yuuichi Mikata ,  Shuji Katsui ,  Hiroshi Akahori

发明人： Yuuichi Mikata ,  Shuji Katsui ,  Hiroshi Akahori

IPC分类号： H01L21/8247 ,  C23C16/24 ,  H01L21/205 ,  H01L21/28 ,  H01L21/336 ,  H01L27/115 ,  H01L29/49 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L21/00

CPC分类号： H01L29/66825 ,  C23C16/24 ,  H01L21/28035 ,  H01L29/4916

摘要： The present invention provides a semiconductor device and a method of manufacturing the same improved in reliability of a gate insulating film by increasing a total charge amount Qbd by suppressing a film stress of a gate electrode formed of a polysilicon film, to a low value. Since the film stress is closely related to a film formation temperature, it is possible to reduce the film stress lower than the conventional case by forming a film at as a high temperature as 640° C. or more. At this time, when the film stress decreases, the total charge amount Qbd regulating dielectric breakdown of the film increases, improving reliability of the gate insulating film. It is therefore possible to set the film stress of the gate electrode at 200 MPA or less in terms of absolute value by forming the gate electrode at 640° C. or more.

摘要翻译： 本发明提供一种半导体器件及其制造方法，其通过将由多晶硅膜形成的栅电极的膜应力抑制到总电荷量Qbd而提高了栅绝缘膜的可靠性。 由于膜应力与成膜温度密切相关，因此通过在640℃以上的高温下形成膜，可以将膜应力降低到比现有的情况。 此时，当薄膜应力降低时，膜的电荷量Qbd调节电介质击穿的增加，提高了栅极绝缘膜的可靠性。 因此，通过在640℃以上形成栅电极，能够将栅电极的膜应力设定为绝对值的200MPA以下。

公开(公告)号：US06251801B1

公开(公告)日：2001-06-26

申请号：US09413541

申请日：1999-10-06

申请人： Kazuo Saki ,  Shuji Katsui

发明人： Kazuo Saki ,  Shuji Katsui

IPC分类号： H01L2131

CPC分类号： H01L21/3144 ,  C23C8/28 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38

摘要： Disclosed is a method of manufacturing a semiconductor device, including the step of supplying an oxidizing gas and a nitriding gas onto one main surface of a semiconductor substrate while heating the substrate so as to oxynitride the surface region of the substrate, wherein the supplying step is performed such that the gaseous phase above the main surface of the substrate forms a first region having a substantially uniform temperature in a direction perpendicular to the main surface of the substrate and a second region interposed between the first region and the substrate and having a temperature gradient in a direction perpendicular to the main surface of the substrate such that the temperature is elevated toward the substrate, and the distance from the main surface of the substrate to the interface between the first and second regions is set at 9.5 cm or less.

摘要翻译： 公开了一种制造半导体器件的方法，包括以下步骤：在加热衬底的同时将氧化气体和渗氮气体供应到半导体衬底的一个主表面上，以便对衬底的表面区域进行氧氮化，其中，供给步骤为 进行，使得基板主表面上方的气相在垂直于基板的主表面的方向上形成具有基本均匀的温度的第一区域，以及介于第一区域和基板之间的第二区域，并具有温度梯度 在垂直于基板的主表面的方向上使得温度朝向基板升高，并且从基板的主表面到第一和第二区域之间的界面的距离被设定为9.5cm以下。

公开(公告)号：US06713824B1

公开(公告)日：2004-03-30

申请号：US09459913

申请日：1999-12-14

申请人： Yuuichi Mikata ,  Shuji Katsui ,  Hiroshi Akahori

发明人： Yuuichi Mikata ,  Shuji Katsui ,  Hiroshi Akahori

IPC分类号： H01L2976

CPC分类号： H01L29/66825 ,  C23C16/24 ,  H01L21/28035 ,  H01L29/4916

摘要： The present invention provides a semiconductor device and a method of manufacturing the same improved in reliability of a gate insulating film by increasing a total charge amount Qbd by suppressing a film stress of a gate electrode formed of a polysilicon film, to a low value. Since the film stress is closely related to a film formation temperature, it is possible to reduce the film stress lower than the conventional case by forming a film at as a high temperature as 640° C. or more. At this time, when the film stress decreases, the total charge amount Qbd regulating dielectric breakdown of the film increases, improving reliability of the gate insulating film. It is therefore possible to set the film stress of the gate electrode at 200 MPA or less in terms of absolute value by forming the gate electrode at 640° C. or more.