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公开(公告)号：US07910455B2
公开(公告)日：2011-03-22
申请号：US12226544
申请日：2007-04-16
IPC分类号： H01L21/46
CPC分类号： H01L21/76256 , H01L21/26506
摘要： The present invention relates to a method for producing an SOI wafer, having at least a step of a bonding heat treatment for increasing bonding strength by heat-treating a bonded wafer obtained by bonding a base wafer and a bond wafer, in which argon is ion-implanted from a surface of either the base wafer or the bond wafer at a dosage of 1×1015 atoms/cm2 or more at least before the bonding step, the surface ion-implanted with argon is used as a bonding surface in the bonding step, and an increase rate of temperature to a treatment temperature of the bonding heat treatment is 5° C./minute or higher. Thus the present invention provides a method for producing an SOI wafer facilitating the efficient production of an SOI wafer having in the neighborhood of a buried insulator layer thereof a polycrystalline silicon layer uniform in thickness introduced and having high gettering ability toward metal contaminations in the SOI layer by a simple and low-cost method.
摘要翻译： SOI晶片的制造方法技术领域本发明涉及一种SOI晶片的制造方法，其特征在于，至少具有通过对通过将基底晶片和接合晶片进行接合而获得的接合晶片进行热处理来提高接合强度的接合热处理的步骤，其中氩是离子 至少在接合步骤之前，以1×10 15原子/ cm 2或更大的剂量从基片或接合晶片的表面注入离子注入氩的表面作为接合步骤中的接合表面 ，并且接合热处理的处理温度的升温速度为5℃/分钟以上。 因此，本发明提供了一种用于制造SOI晶片的方法，其有助于SOI掩模的有效生产，该SOI晶片在其绝缘体层附近具有均匀导入的多晶硅层，并且对SOI层中的金属污染具有高吸杂能力 通过简单而低成本的方法。
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公开(公告)号：US08709911B2
公开(公告)日：2014-04-29
申请号：US12450329
申请日：2008-04-15
申请人： Masao Matsumine
发明人： Masao Matsumine
IPC分类号： H01L21/324
CPC分类号： H01L21/76251 , H01L21/2007
摘要： The present invention is a method for producing an SOI substrate including the steps of: preparing a bond wafer and a base wafer which are composed of single crystal silicon wafers; forming an oxide film on a surface of at least one of the bond wafer and the base wafer so that a thickness of a buried oxide film after bonding becomes 3 μm or more; bonding the bond wafer and the base wafer via the oxide film; performing a low-temperature heat treatment at a temperature of 400° C. or more and 1000° C. or less to the bonded substrate; thinning the bond wafer to be an SOI layer; and increasing bonding strength by performing a high-temperature heat treatment at a temperature exceeding 1000° C. Thus, a method for producing an SOI substrate by which generation of slip dislocations is suppressed and an SOI substrate having a high-quality SOI layer can be obtained, for producing a SOI layer in which the thickness of a buried oxide film is thick as 3 μm or more by a bonding method, etc. are provided.
摘要翻译： 本发明是制造SOI衬底的方法，包括以下步骤：制备由单晶硅晶片组成的接合晶片和基底晶片; 在所述接合晶片和所述基底晶片中的至少一个的表面上形成氧化膜，使得接合后的埋入氧化膜的厚度为3μm以上; 通过氧化膜将接合晶片和基底晶片接合; 在键合衬底的400℃以上1000℃以下的温度下进行低温热处理， 使接合晶片变薄为SOI层; 并且通过在超过1000℃的温度下进行高温热处理来提高接合强度。因此，可以抑制滑移位错产生的SOI衬底的制造方法和具有高质量SOI层的SOI衬底 用于通过接合方法制造其中掩埋氧化膜厚度为3μm或更大的SOI层的方法。
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公开(公告)号：US20090280620A1
公开(公告)日：2009-11-12
申请号：US12226264
申请日：2007-04-23
IPC分类号： H01L21/782
CPC分类号： H01L21/76256 , H01L21/26506 , H01L21/26533 , H01L21/3226
摘要： The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×1012 atoms/cm2 or more and less than 1×1015 atoms/cm2. As a result, there may be provided a method for producing an SOI wafer having sufficient gettering ability while the suppression of leak failure, degradation of oxide dielectric breakdown voltage or the like is provided.
摘要翻译： 本发明是一种制造SOI晶片的方法，其至少包括通过离子注入从基底晶片或接合晶片的一个表面在硅中电惰性的中性元件形成离子注入损伤层的步骤，其中离子 以1×10 12原子/ cm 2以上且小于1×10 15原子/ cm 2的剂量进行形成离子注入损伤层的工序。 结果，可以提供一种制造具有足够的吸气能力的SOI晶片的方法，同时提供泄漏故障的抑制，氧化物介质击穿电压的劣化等。
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公开(公告)号：US20100044829A1
公开(公告)日：2010-02-25
申请号：US12450329
申请日：2008-04-15
申请人： Masao Matsumine
发明人： Masao Matsumine
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L21/76251 , H01L21/2007
摘要： The present invention is a method for producing an SOI substrate including the steps of: preparing a bond wafer and a base wafer which are composed of single crystal silicon wafers; forming an oxide film on a surface of at least one of the bond wafer and the base wafer so that a thickness of a buried oxide film after bonding becomes 3 μm or more; bonding the bond wafer and the base wafer via the oxide film; performing a law-temperature heat treatment at a temperature of 400° C. or more and 1000° C. or less to the bonded substrate; thinning the bond wafer to be an SOI layer; and increasing bonding strength by performing a high-temperature heat treatment at a temperature exceeding 1000° C. Thus, a method for producing an SOI substrate by which generation of slip dislocations is suppressed and an SOI substrate having a high-quality SOI layer can be obtained, for producing a SOI layer in which the thickness of a buried oxide film is thick as 3 μm or more by a bonding method, etc. are provided.
摘要翻译： 本发明是制造SOI衬底的方法，包括以下步骤：制备由单晶硅晶片组成的接合晶片和基底晶片; 在所述接合晶片和所述基底晶片中的至少一个的表面上形成氧化膜，使得接合后的埋入氧化膜的厚度为3μm以上; 通过氧化膜将接合晶片和基底晶片接合; 在键合衬底的温度为400℃以上且1000℃以下的温度下进行定律热处理; 使接合晶片变薄为SOI层; 并且通过在超过1000℃的温度下进行高温热处理来提高接合强度。因此，可以抑制滑移位错产生的SOI衬底的制造方法和具有高质量SOI层的SOI衬底 用于通过接合方法制造其中掩埋氧化膜厚度为3μm或更大的SOI层的方法。
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公开(公告)号：US08268705B2
公开(公告)日：2012-09-18
申请号：US12226264
申请日：2007-04-23
IPC分类号： H01L21/322
CPC分类号： H01L21/76256 , H01L21/26506 , H01L21/26533 , H01L21/3226
摘要： The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×1012 atoms/cm2 or more and less than 1×1015 atoms/cm2. As a result, there may be provided a method for producing an SOI wafer having sufficient gettering ability while the suppression of leak failure, degradation of oxide dielectric breakdown voltage or the like is provided.
摘要翻译： 本发明是一种制造SOI晶片的方法，其至少包括通过离子注入从基底晶片或接合晶片的一个表面在硅中电惰性的中性元件形成离子注入损伤层的步骤，其中离子 以1×10 12原子/ cm 2以上且小于1×10 15原子/ cm 2的剂量进行形成离子注入损伤层的工序。 结果，可以提供一种制造具有足够的吸气能力的SOI晶片的方法，同时提供泄漏故障的抑制，氧化物介质击穿电压的劣化等。
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公开(公告)号：US20090104752A1
公开(公告)日：2009-04-23
申请号：US12226544
申请日：2007-04-16
IPC分类号： H01L21/762
CPC分类号： H01L21/76256 , H01L21/26506
摘要： The present invention relates to a method for producing an SOI wafer, having at least a step of a bonding heat treatment for increasing bonding strength by heat-treating a bonded wafer obtained by bonding a base wafer and a bond wafer, in which argon is ion-implanted from a surface of either the base wafer or the bond wafer at a dosage of 1×1015 atoms/cm2 or more at least before the bonding step, the surface ion-implanted with argon is used as a bonding surface in the bonding step, and an increase rate of temperature to a treatment temperature of the bonding heat treatment is 5° C./minute or higher. Thus the present invention provides a method for producing an SOI wafer facilitating the efficient production of an SOI wafer having in the neighborhood of a buried insulator layer thereof a polycrystalline silicon layer uniform in thickness introduced and having high gettering ability toward metal contaminations in the SOI layer by a simple and low-cost method.
摘要翻译： SOI晶片的制造方法技术领域本发明涉及一种SOI晶片的制造方法，其特征在于，至少具有通过对通过将基底晶片和接合晶片进行接合而获得的接合晶片进行热处理来提高接合强度的接合热处理的步骤，其中氩是离子 至少在接合步骤之前，以1×10 15个原子/ cm 2或更大的剂量从基片或接合晶片的表面注入，在接合步骤中使用离子注入氩的表面作为接合表面，并且 接合热处理的处理温度的升温速度为5℃/分钟以上。 因此，本发明提供了一种用于制造SOI晶片的方法，其有助于SOI掩模的有效生产，该SOI晶片在其绝缘体层附近具有均匀导入的多晶硅层，并且对SOI层中的金属污染具有高吸杂能力 通过简单而低成本的方法。
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