公开(公告)号：US5430386A

公开(公告)日：1995-07-04

申请号：US12405

申请日：1993-02-02

申请人： Michel Morin ,  Jean Friedt ,  Yasuhide Nakai ,  Hidehisa Hashizume ,  Chiyo Fujihira ,  Masatake Hirose

发明人： Michel Morin ,  Jean Friedt ,  Yasuhide Nakai ,  Hidehisa Hashizume ,  Chiyo Fujihira ,  Masatake Hirose

IPC分类号： H01L21/66 ,  G01N22/00 ,  G01R31/26

CPC分类号： G01R31/2648

摘要： Method and its device for evaluating semiconductor wafers that evaluates semiconductor wafers by estimating the dopant level which is equivalent to the critical value at which the excess minority carrier injection density reaches the high injection state, and that measures the minority carrier lifetime at a low-injection-state exposure condition adapted to said dopant level. Excitation light (emitted by excitation light generator 4) is emitted onto a semiconductor wafer 2 at varying exposure conditions as imposed by an exposure condition controller 9. Detector 6 detects the change in the level of reflected radiation from microwaves emitted by microwave generator 5 onto the wafer 2. The dopant level in the semiconductor wafer 2 is estimated by estimation circuit 10' based on the change in the exposure conditions and the change in the minority carrier lifetime as determined by the change in the microwave level. The minority carrier lifetime is measured by measurement circuit 12 at the exposure condition adapted to said dopant level as detected by exposure condition detection circuit 11. This structure makes possible the estimation of the dopant level in the semiconductor wafer while obtaining the lifetime based on Shockley-Read-Hall statistics, and is thus highly qualified for evaluating the semiconductor wafer 2.

摘要翻译： 用于评估半导体晶片的方法及其装置，其通过估计等效于过剩少数载流子注入密度达到高注入状态的临界值的掺杂剂水平来评估半导体晶片，并且在低注入下测量少数载流子寿命 - 适合于所述掺杂剂水平的状态曝光条件。 激发光（由激发光发生器4发射）以暴露条件控制器9施加的不同曝光条件发射到半导体晶片2.检测器6检测由微波发生器5发射的微波的反射辐射的水平的变化， 晶片2.通过由微波级的变化确定的基于曝光条件的变化和少数载流子寿命的变化的估计电路10'来估计半导体晶片2中的掺杂剂水平。 少数载流子寿命由测量电路12在由曝光条件检测电路11检测到的适合于所述掺杂剂水平的曝光条件下测量。这种结构使得可以估计半导体晶片中的掺杂剂水平，同时基于Shockley- 读 - 霍尔统计数据，因此非常适合评估半导体晶片2。