公开(公告)号：US5430386A

公开(公告)日：1995-07-04

申请号：US12405

申请日：1993-02-02

申请人： Michel Morin ,  Jean Friedt ,  Yasuhide Nakai ,  Hidehisa Hashizume ,  Chiyo Fujihira ,  Masatake Hirose

发明人： Michel Morin ,  Jean Friedt ,  Yasuhide Nakai ,  Hidehisa Hashizume ,  Chiyo Fujihira ,  Masatake Hirose

IPC分类号： H01L21/66 ,  G01N22/00 ,  G01R31/26

CPC分类号： G01R31/2648

摘要： Method and its device for evaluating semiconductor wafers that evaluates semiconductor wafers by estimating the dopant level which is equivalent to the critical value at which the excess minority carrier injection density reaches the high injection state, and that measures the minority carrier lifetime at a low-injection-state exposure condition adapted to said dopant level. Excitation light (emitted by excitation light generator 4) is emitted onto a semiconductor wafer 2 at varying exposure conditions as imposed by an exposure condition controller 9. Detector 6 detects the change in the level of reflected radiation from microwaves emitted by microwave generator 5 onto the wafer 2. The dopant level in the semiconductor wafer 2 is estimated by estimation circuit 10' based on the change in the exposure conditions and the change in the minority carrier lifetime as determined by the change in the microwave level. The minority carrier lifetime is measured by measurement circuit 12 at the exposure condition adapted to said dopant level as detected by exposure condition detection circuit 11. This structure makes possible the estimation of the dopant level in the semiconductor wafer while obtaining the lifetime based on Shockley-Read-Hall statistics, and is thus highly qualified for evaluating the semiconductor wafer 2.

摘要翻译： 用于评估半导体晶片的方法及其装置，其通过估计等效于过剩少数载流子注入密度达到高注入状态的临界值的掺杂剂水平来评估半导体晶片，并且在低注入下测量少数载流子寿命 - 适合于所述掺杂剂水平的状态曝光条件。 激发光（由激发光发生器4发射）以暴露条件控制器9施加的不同曝光条件发射到半导体晶片2.检测器6检测由微波发生器5发射的微波的反射辐射的水平的变化， 晶片2.通过由微波级的变化确定的基于曝光条件的变化和少数载流子寿命的变化的估计电路10'来估计半导体晶片2中的掺杂剂水平。 少数载流子寿命由测量电路12在由曝光条件检测电路11检测到的适合于所述掺杂剂水平的曝光条件下测量。这种结构使得可以估计半导体晶片中的掺杂剂水平，同时基于Shockley- 读 - 霍尔统计数据，因此非常适合评估半导体晶片2。

公开(公告)号：US20100134615A1

公开(公告)日：2010-06-03

申请号：US12452230

申请日：2008-07-18

申请人： Masaru Akamatsu ,  Hidehisa Hashizume ,  Yasuhide Nakai

发明人： Masaru Akamatsu ,  Hidehisa Hashizume ,  Yasuhide Nakai

IPC分类号： H04N5/14

CPC分类号： G01B11/2433 ,  G01N21/94 ,  G01N21/9503

摘要： To provide a shape measurement apparatus and a shape measurement method with which it is possible to perform a shape measurement, when a shape of an end surface of a disk-shaped semiconductor wafer or the like is measured on the basis of a projection image thereof, without receiving an influence of a contaminant on the end surface.With a rotation supporting mechanism 9 supporting a wafer 1, the wafer 1 is supported in a range from a first supporting position rotated by +δ with respect to a predetermined reference supporting position to a second supporting position rotated by −δ degrees at two or more supporting positions including the first supporting position and the second supporting position, a projection image of the end surface of the wafer 1 supported at the respective supporting positions is picked up by an image sensor 7, an index value of an end surface value is calculated for each of a plurality of obtained projection images, a selection of one representative value based on the plurality of calculated index values or a calculation of one aggregate value is performed, and a measurement value for the shape of the end surface of the wafer 1 corresponding to the reference supporting position is derived. At that time, when a radius of the wafer 1 and a chamfer width are set as r and k, δ≧cos−1 ((r−k)/r) is desirably satisfied.

摘要翻译： 为了提供可以进行形状测量的形状测量装置和形状测量方法，当基于其投影图像来测量盘形半导体晶片等的端面的形状时， 而不会在端面上受到污染物的影响。 通过支撑晶片1的旋转支撑机构9，晶片1被支撑在从相对于预定基准支撑位置旋转+δ的第一支撑位置到在两个以上旋转-δ度的第二支撑位置的范围内 包括第一支撑位置和第二支撑位置的支撑位置，由图像传感器7拾取支撑在各支撑位置处的晶片1的端面的投影图像，计算端面值的指标值 执行多个获得的投影图像中的每一个，基于多个计算出的指标值的一个代表值的选择或一个聚合值的计算，并且对应于晶片1的端面的形状的测量值对应于 导出参考支撑位置。 此时，当晶片1的半径和倒角宽度被设定为r和k时，希望满足δ≥cos-1（（r-k）/ r）。

公开(公告)号：US08310536B2

公开(公告)日：2012-11-13

申请号：US12452230

申请日：2008-07-18

申请人： Masaru Akamatsu ,  Hidehisa Hashizume ,  Yasuhide Nakai

发明人： Masaru Akamatsu ,  Hidehisa Hashizume ,  Yasuhide Nakai

IPC分类号： H04N7/18

CPC分类号： G01B11/2433 ,  G01N21/94 ,  G01N21/9503

摘要： An apparatus and method are provided for measuring the end surface of a disk-shaped semiconductor wafer based on its projection image, without the influence of contaminants on the end surface. A rotation supporting mechanism supports a wafer between a first supporting position rotated by +δrelative to a predetermined reference position and a second supporting position rotated by −δdegrees at two or more supporting positions. An image sensor picks up a projection image of the wafer's end surface. An index value for the end surface is calculated for each of a plurality of obtained projection images. One representative value of the calculated index values or an aggregate value is obtained, and a shape measurement of the wafer's end surface corresponding to the reference supporting position is derived. When the wafer's radius and a chamfer width are set as r and k, δ≧cos−1 ((r-k)/r) is satisfied.

摘要翻译： 提供了一种装置和方法，用于基于其投影图像来测量盘形半导体晶片的端面，而不受污染物在端面上的影响。 旋转支撑机构支撑在相对于预定基准位置旋转+δ的第一支撑位置和在两个或更多个支撑位置处旋转-δ度的第二支撑位置之间的晶片。 图像传感器拾取晶片端面的投影图像。 针对多个获得的投影图像中的每一个计算端面的索引值。 获得计算出的指标值的一个代表值或聚合值，得到对应于参考支撑位置的晶片端面的形状测量。 当晶片的半径和倒角宽度被设置为r和k时，满足δ≥cos-1（（r-k）/ r）。

公开(公告)号：US20100302551A1

公开(公告)日：2010-12-02

申请号：US12745546

申请日：2008-12-02

申请人： Masaru Akamatsu ,  Hidehisa Hashizume ,  Yasuhide Nakai

发明人： Masaru Akamatsu ,  Hidehisa Hashizume ,  Yasuhide Nakai

IPC分类号： G01B11/24

CPC分类号： G01B11/24

摘要： When a shape of an end face of a disc-shaped measurement target is to be measured on the basis of its projection image, a shape measuring device in which a non-parallel light component is not contained in a light flux projected to the measurement target as much as possible and moreover, correct shape measurement can be made by ensuring parallelism between a light projection direction and each face of front and back sides of the measurement target.There are provided a collimator lens 3 for having outgoing light of a point light source 2 pass and collimating the same in a light projection direction R1 and a single or a plurality of apertures 8 shielding passage of light in a range outside an image pickup range of a camera seen from the light projection direction R1 or passage of light in a range inside the image pickup range and outside a boundary located in a range outside a projection image of a measurement portion in the light projection direction R1 in the light flux traveling from the collimator lens 3 to the measurement target 1 side. Moreover, a parallel supporting portion 21 for supporting one of the faces of the measurement target 1 in parallel with the light projection direction R1 at a position on the center side with respect to the measurement portion in the measurement target 1 supported by a center sucking and supporting mechanism 9 is provided.

摘要翻译： 当基于其投影图像来测量盘形测量目标的端面的形状时，在投影到测量目标的光束中不包含非平行光分量的形状测量装置 此外，可以通过确保光投射方向与测量对象的前后面的每个面之间的平行度来进行正确的形状测量。 设置有用于使点光源2的出射光沿光投射方向R1通过并准直的准直透镜3，以及屏蔽光的通过的单个或多个孔8，该光束在图像拾取范围之外的范围内 从光投影方向R1看的照相机或者在图像摄取范围内的范围内的光的通过，以及位于光投射方向R1上的测量部分的投影图像外的范围内的边界 准直透镜3到测量对象1侧。 此外，平行支撑部分21用于在测量对象1中心侧的位置处相对于测量目标1中的一个中心吸力支撑的一个位置支撑测量对象1的一个面与光投射方向R1平行， 提供支撑机构9。

公开(公告)号：US08228509B2

公开(公告)日：2012-07-24

申请号：US12745546

申请日：2008-12-02

申请人： Masaru Akamatsu ,  Hidehisa Hashizume ,  Yasuhide Nakai

发明人： Masaru Akamatsu ,  Hidehisa Hashizume ,  Yasuhide Nakai

IPC分类号： G01B11/00

CPC分类号： G01B11/24

摘要： A shape measuring device including a light projecting device for projecting a light flux to a measurement portion, and image pickup device for picking up a projection image of the measurement portion. The light projecting device includes a collimator lens having outgoing light of a point light source pass and collimating the same in a light projection direction and one or more apertures shielding passage of light in a range outside an image pickup range or passage of light in a range inside the image pickup range and outside a boundary located in a range outside a projection image of a measurement portion. Moreover, a parallel supporting portion for supporting a face of the measurement target in parallel with the light projection direction at a position on the center side with respect to the measurement portion in the measurement target supported by a center sucking and supporting mechanism is provided.

摘要翻译： 一种形状测量装置，包括用于将光束投射到测量部分的投光装置，以及用于拾取测量部分的投影图像的图像拾取装置。 该投光装置包括：准直透镜，其具有点光源的出射光，并沿光投射方向准直;以及一个或多个孔，遮光光线的范围在摄像范围之外的范围内，或光的通过范围 在图像拾取范围内并且位于测量部分的投影图像之外的范围内的边界之外。 此外，还提供一种平行的支撑部分，用于在由中心吸引和支撑机构支撑的测量对象中的相对于测量部分的中心侧的位置处与光投射方向平行地支撑测量对象的面。

公开(公告)号：US5760597A

公开(公告)日：1998-06-02

申请号：US659515

申请日：1996-06-06

申请人： Naoyuki Yoshida ,  Hiroyuki Takamatsu ,  Shingo Sumie ,  Yutaka Kawata ,  Hidehisa Hashizume ,  Futoshi Ojima ,  Yuji Hirao

发明人： Naoyuki Yoshida ,  Hiroyuki Takamatsu ,  Shingo Sumie ,  Yutaka Kawata ,  Hidehisa Hashizume ,  Futoshi Ojima ,  Yuji Hirao

IPC分类号： G01N21/88 ,  G01N21/00 ,  G01N21/956 ,  G01R31/265 ,  G01R31/28 ,  H01L21/66 ,  G01R31/26

CPC分类号： G01R31/2656 ,  G01R31/2831 ,  H01L22/14

摘要： In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.

摘要翻译： 除了微波和激发光之外，偏光也照射在使用含有电解质的溶液钝化的半导体样品的表面上。 偏置光的照射增加溶液中存在的离子物质的量，极大地改变了半导体样品的表面电位，并抑制了表面复合。 这使得可以以高精度测量半导体样品内存在的载流子的寿命，而不受表面复合的影响。

公开(公告)号：US5438276A

公开(公告)日：1995-08-01

申请号：US59764

申请日：1993-05-12

申请人： Yutaka Kawata ,  Takuya Kusaka ,  Hidehisa Hashizume ,  Futoshi Ojima

发明人： Yutaka Kawata ,  Takuya Kusaka ,  Hidehisa Hashizume ,  Futoshi Ojima

IPC分类号： G01N21/00 ,  G01N22/00 ,  G01R31/265 ,  H01L21/66 ,  G01R31/26

CPC分类号： G01R31/2656

摘要： An apparatus for measuring the life time of minority carriers includes a light source for irradiating a first region of a semiconductor wafer, a microwave generator for generating microwaves, a transmission line for transmitting a first part of the generated mark raised to the region of the semiconductor wafer that is radiated by the excitation light and a second portion of the generated microwave to a region of the semiconductor wafer that is not radiated by the excitation light. The intensity of the microwave signals reflected from the semiconductor wafer are detected and the life time of the minority carriers is calculated based upon the detected intensities.

摘要翻译： 用于测量少数载流子寿命的装置包括用于照射半导体晶片的第一区域的光源，用于产生微波的微波发生器，用于将生成的标记的第一部分发送到半导体区域的传输线 由激发光辐射的晶片和产生的微波的第二部分到不被激发光照射的半导体晶片的区域。 检测从半导体晶片反射的微波信号的强度，并且基于检测到的强度来计算少数载流子的寿命。