摘要:
A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in the trench; a source electrode coupled with the source and base region; a drain electrode on a back of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer on the side of the trench under application of the gate voltage.
摘要:
A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion.
摘要:
In a method of manufacturing a silicon carbide substrate, a defect-containing substrate made of silicon carbide is prepared. The defect-containing substrate has a front surface, a rear surface being opposite to the front surface, and a surface portion adjacent to the front surface. The detect-containing substrate includes a screw dislocation in the surface portion. The front surface of the defect-containing substrate is applied with an external force so that a crystallinity of the surface portion is reduced. After being applied with the external force, the defect-containing substrate is thermally treated so that the crystallinity of the surface portion is recovered.
摘要:
A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.
摘要:
A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.
摘要:
A semiconductor device is provided with: a first conductivity type contact region; a second conductivity type body region; a first conductivity type drift region of; a trench formed through the contact region and body region from a front surface of the semiconductor substrate, wherein a bottom of the trench is positioned in the drift region; an insulating film covering an inner surface of the trench; a gate electrode accommodated in the trench in a state covered with the insulating film; and a second conductivity type floating region formed at a position deeper than the bottom of the trench, and adjacent to the bottom of the trench. The floating region includes a first layer adjacent to the bottom of the trench and a second layer formed at a position deeper than the first layer, wherein a width of the first layer is broader than a width of the second layer.
摘要:
An angular velocity sensor includes a sensor element having a shape defined in an XYZ space, and can detect an angular velocity about a Z axis. The sensor element includes a support body extending in a direction of an X axis, an arm connected with the support body, and a weight connected with the arm. The arm has a first end connected with the support body and a second end connected with the weight. The arm has substantially a J-shape including a first arm portion extending in a direction of a Y axis from the first end to a first corner, a second arm portion extending in the direction of the X axis from the first corner to a second corner, and a third arm portion extending in the direction of the Y axis from the second corner to the second end. The length of the arm in the direction of the X axis is larger than the length of the weight in the direction of the X axis. This angular velocity sensor can improve the sensibility to angular velocity about the Z axis.
摘要:
A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench sandwiched by each of the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer located under the base region and extending to a depth deeper than the trench. The deep layer is formed into a lattice pattern.
摘要:
A trench gate type IGBT includes: a first semiconductor layer; a second semiconductor on the first semiconductor layer; a third semiconductor on the second semiconductor layer; trenches for separating the third semiconductor layer into first regions and second regions; a gate insulation film on an inner wall of each trench; a gate electrode on the gate insulation film; a fourth semiconductor layer in a surface portion of each first region and contacting each trench; a first electrode connecting to the first region and the fourth semiconductor layer; and a second electrode connecting to the first semiconductor layer. The first regions and the second regions are alternately arranged. Two second regions are continuously connected together to be integrated into one body.
摘要:
A computer apparatus includes an equipment-information holding unit which holds equipment information which contains setting information of equipment of the computer apparatus and license information for using the equipment. An image-data generating unit generates image data for printing the equipment information on a sheet in a predetermined form. An equipment-information setting unit stores the equipment information into the equipment-information holding unit based on image data read from the printed sheet on which the equipment information is printed.