公开(公告)号：US20110133080A1

公开(公告)日：2011-06-09

申请号：US12898455

申请日：2010-10-05

申请人： Chie SHISHIDO ,  Mayuka OOSAKI ,  Mitsugu SATO ,  Hiroki KAWADA ,  Tatsuya MAEDA

发明人： Chie SHISHIDO ,  Mayuka OOSAKI ,  Mitsugu SATO ,  Hiroki KAWADA ,  Tatsuya MAEDA

IPC分类号： G01N23/225

CPC分类号： H01J37/263 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2826

摘要： The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

摘要翻译： 本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸（CD值）的带电粒子束装置。 对于本发明，使用用于校准的样品，其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。 基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。 用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。 当进行尺寸测量时，根据待测图案的位置在观察区域中应用登记的光束控制参数。 因此，本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法，以及用于减少由电子差异引起的仪器误差的方法 设备之间的束着陆角度。

公开(公告)号：US07807980B2

公开(公告)日：2010-10-05

申请号：US11647348

申请日：2006-12-29

申请人： Chie Shishido ,  Mayuka Oosaki ,  Mitsugu Sato ,  Hiroki Kawada ,  Tatsuya Maeda

发明人： Chie Shishido ,  Mayuka Oosaki ,  Mitsugu Sato ,  Hiroki Kawada ,  Tatsuya Maeda

IPC分类号： G21K7/00 ,  A61N5/00 ,  G21G5/00

CPC分类号： H01J37/263 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2826

摘要： The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

摘要翻译： 本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸（CD值）的带电粒子束装置。 对于本发明，使用用于校准的样品，其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。 基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。 用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。 当进行尺寸测量时，根据待测图案的位置在观察区域中应用登记的光束控制参数。 因此，本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法，以及用于减少由电子差异引起的仪器误差的方法 设备之间的束着陆角度。

公开(公告)号：US20100133426A1

公开(公告)日：2010-06-03

申请号：US12588517

申请日：2009-10-19

申请人： Mayuka Oosaki ,  Chie Shishido ,  Maki Tanaka ,  Hiroki Kawada

发明人： Mayuka Oosaki ,  Chie Shishido ,  Maki Tanaka ,  Hiroki Kawada

IPC分类号： G01D18/00 ,  G01N23/00

CPC分类号： G01N23/225 ,  H01J2237/2823

摘要： A method of evaluating a resolution of a scanning electron microscope includes picking up a first image of a concave and convex pattern formed on a surface of a sample utilizing a first scanning electron microscope, picking up a second image of the concave and convex pattern on the sample utilizing a second scanning electron microscope, respectively processing the first image and the second image in order to evaluate unevenness in resolution between the first scanning electron microscope and the second scanning electron microscope, and determining whether a height of the concave and convex pattern as measured from a bottom thereof is sufficient so that no affection by a secondary electron emitted from the bottom of the concave and convex pattern is exhibited.

摘要翻译： 评价扫描型电子显微镜的分辨率的方法包括利用第一扫描电子显微镜拾取形成在样品表面上的凹凸图案的第一图像，在第二图像上拾取凹凸图案的第二图像 分别处理第一图像和第二图像以评估第一扫描电子显微镜和第二扫描电子显微镜之间的分辨率的不均匀性，以及确定测量的凹凸图案的高度是否为第二扫描电子显微镜 从底部开始就足够了，从而不会发生由凹凸图案的底部发射的二次电子的影响。

公开(公告)号：US07164127B2

公开(公告)日：2007-01-16

申请号：US10988522

申请日：2004-11-16

申请人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

发明人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

IPC分类号： G01N23/00

CPC分类号： G01N23/225

摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.

摘要翻译： 本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响， 以及使用扫描电子显微镜评价重复测定的精度的方法。 提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个 在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。 这使得可以消除由微微分图案形状引起的测量中的变化。

公开(公告)号：US08003940B2

公开(公告)日：2011-08-23

申请号：US12349751

申请日：2009-01-07

申请人： Mayuka Oosaki ,  Chie Shishido ,  Hiroki Kawada ,  Tatsuya Maeda

发明人： Mayuka Oosaki ,  Chie Shishido ,  Hiroki Kawada ,  Tatsuya Maeda

IPC分类号： H01J37/28 ,  H01J37/256 ,  G01N23/00

CPC分类号： H01J37/28 ,  H01J2237/282

摘要： A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern formed on a wafer, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern formed on the wafer by using each of the plural scanning electron microscopes.

摘要翻译： 用于控制多个扫描电子显微镜之间的工具对工具差异的系统包括：测量单元，用于基于通过成像获得的二次电子图像提取的信息来测量多个扫描电子显微镜之间的工具对工具差异 在晶片上形成的参考图案，用于监视多个扫描电子显微镜中的每一个的工具状态的工具状态监视单元和用于在屏幕上显示多个扫描电子显微镜之间的工具与工具之间的差异之间的关系的输出单元 以及由工具状态监视单元监视的多个扫描电子显微镜中的每一个的工具状态。 工具状态监视单元通过使用多个扫描电子显微镜中的每一个对成像在晶片上的参考图案进行成像，监视多个扫描电子显微镜中的每一个的工具状态。

公开(公告)号：US07408155B2

公开(公告)日：2008-08-05

申请号：US11202146

申请日：2005-08-12

申请人： Mayuka Oosaki ,  Hiroki Kawada ,  Ryo Nakagaki ,  Chie Shishido

发明人： Mayuka Oosaki ,  Hiroki Kawada ,  Ryo Nakagaki ,  Chie Shishido

IPC分类号： G03F7/20 ,  G03F7/40

CPC分类号： G01N23/225

摘要： A method for measuring a dimension of a pattern formed on a sample using a secondary electron image obtained by picking up an image of the sample using a scanning electron microscope includes: obtaining a secondary electron image of a sample by picking up an image of the sample using a scanning electron microscope; creating, using the secondary electron image, an image profile of a pattern whose dimension is to be measured, within the obtained secondary electron image; retrieving a model profile that matches best with the created image profile from a plurality of model profiles prestored that are obtained from respective secondary electron images of a plurality of patterns, the cross sections of the plurality of patterns being of known shapes and dimensions and being different in shape; and obtaining a dimension of the pattern using information of the retrieved model profile.

摘要翻译： 使用通过使用扫描电子显微镜拾取样品的图像获得的二次电子图像来测量在样品上形成的图案的尺寸的方法包括：通过拾取样品的图像获得样品的二次电子图像 使用扫描电子显微镜; 在获得的二次电子图像中产生使用二次电子图像的尺寸要被测量的图案的图像轮廓; 从从多个图案的相应二次电子图像获得的预先存储的多个模型轮廓中检索与所创建的图像轮廓最佳匹配的模型轮廓，所述多个图案的横截面具有已知的形状和尺寸，并且是不同的 形状; 以及使用所检索的模型简档的信息来获得所述模式的维度。

公开(公告)号：US07399964B2

公开(公告)日：2008-07-15

申请号：US11119934

申请日：2005-05-03

申请人： Chie Shishido ,  Ryo Nakagaki ,  Mayuka Oosaki ,  Hiroki Kawada

发明人： Chie Shishido ,  Ryo Nakagaki ,  Mayuka Oosaki ,  Hiroki Kawada

IPC分类号： H01J37/26

CPC分类号： H01J37/28 ,  G01N23/225 ,  H01J37/222 ,  H01J37/263 ,  H01J2237/24578 ,  H01J2237/2817 ,  H01J2237/2823

摘要： The present invention relates to an electron microscope which reduces a difference in measured values that occur due to a difference in resolution that cannot be fully adjusted which exists among electron microscopes, or occurs as time elapses, and a method for measuring dimensions. An operator adapted to compensate for changes of an electron image to be generated due to a difference in probe diameter is obtained in advance from electron images of one reference sample created by electron microscopes having different resolution (probe diameter). Then a compensation-measurement electron image which is equivalent to an electron image created under the same probe diameter by applying the operator for compensation, and the compensation-measurement electron image is used for measuring the dimensions.

摘要翻译： 本发明涉及一种电子显微镜，其特征在于，减少由电子显微镜中存在的不能充分调整的分辨率的差异而发生的测量值的差异，或者随着时间的推移而发生的电子显微镜以及尺寸的测定方法。 从具有不同分辨率（探针直径）的电子显微镜产生的一个参考样品的电子图像预先获得适于补偿由于探针直径差引起的电子图像变化的操作者。 然后通过施加用于补偿的操作者，并且使用补偿测量电子图像来测量相当于在相同探针直径下产生的电子图像的补偿测量电子图像来测量尺寸。

公开(公告)号：US20070164219A1

公开(公告)日：2007-07-19

申请号：US11647348

申请日：2006-12-29

申请人： Chie Shishido ,  Mayuka Oosaki ,  Mitsugu Sato ,  Hiroki Kawada ,  Tatsuya Maeda

发明人： Chie Shishido ,  Mayuka Oosaki ,  Mitsugu Sato ,  Hiroki Kawada ,  Tatsuya Maeda

IPC分类号： G21K7/00

CPC分类号： H01J37/263 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2826

摘要： The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

摘要翻译： 本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸（CD值）的带电粒子束装置。 对于本发明，使用用于校准的样品，其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。 基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。 用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。 当进行尺寸测量时，根据待测图案的位置在观察区域中应用登记的光束控制参数。 因此，本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法，以及用于减少由电子差异引起的仪器误差的方法 设备之间的束着陆角度。

公开(公告)号：US20070114405A1

公开(公告)日：2007-05-24

申请号：US11583886

申请日：2006-10-20

申请人： Mayuka Oosaki ,  Chie Shishido ,  Hiroki Kawada ,  Tatsuya Maeda

发明人： Mayuka Oosaki ,  Chie Shishido ,  Hiroki Kawada ,  Tatsuya Maeda

IPC分类号： G21K7/00

CPC分类号： H01J37/28 ,  H01J2237/282

摘要： A system for controlling a tool-to-tool matching between a plurality of scanning electron microscopes for pattern dimension measurement includes a measuring unit for, at regular intervals, measuring a tool-to-tool disparity between scanning electron microscopes based on secondary electron image data, and measuring indicators indicating states of the microscopes, a tool-to-tool-disparity causing factor analyzing unit for analyzing a relationship between the tool-to-tool disparity and the values of the indicators measured by the measuring unit to estimate a factor that has caused said tool-to-tool disparity, and an output unit for displaying and outputting the tool-to-tool disparity causing factor estimated by the tool-to-tool-disparity causing factor analyzing unit.

摘要翻译： 用于控制用于图案尺寸测量的多个扫描电子显微镜之间的工具对工具匹配的系统包括用于以规则的间隔测量基于二次电子图像数据的扫描电子显微镜之间的工具对工具差异的测量单元 以及指示显示器状态的测量指示器，工具对工具差异因素分析单元，用于分析工具与工具之间的差异与由测量单元测量的指标的值之间的关系，以估计因素 已经引起了工具对工具的差异，以及输出单元，用于显示和输出由工具对工具差异造成因子分析单元估计的工具对工具差异引起的因素。

公开(公告)号：US07408154B2

公开(公告)日：2008-08-05

申请号：US11260187

申请日：2005-10-28

申请人： Mayuka Oosaki ,  Chie Shishido ,  Hiroki Kawada ,  Tatsuya Maeda

发明人： Mayuka Oosaki ,  Chie Shishido ,  Hiroki Kawada ,  Tatsuya Maeda

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： H01J37/28 ,  H01J37/222 ,  H01J2237/221 ,  H01J2237/2826

摘要： As measurement accuracy required for the scanning electron microscope (SEM) for measuring a pattern width becomes stringent, a technique of reducing the difference in a measured dimension between the SEM's is desired. However, the conventional technique of evaluating the difference in a measured dimension between the SEM's cannot separate the difference in a measured dimension between the SEM's themselves and a dimensional change resulting from deformation of the pattern itself. Moreover, the technique of reducing the difference in a measured dimension between the SEM's needs an operator for reducing the difference in a measured dimension between the SEM's for each measurement pattern shape. In this invention, a pattern at the same position is measured for a plurality of times with each SEM, and a different between extrapolated values of measured values obtained by the respective SEM's is calculated, whereby separation between the difference in a measured dimension between the SEM's and a dimensional change resulting from deformation of the pattern itself is made possible. Moreover, matching electron beam image profiles between the SEM's using an operator that simulates a difference in beam diameter between the SEM's makes it possible to reduce the difference in a measured dimension between the SEM's, not depending on a dimensional measurement pattern shape.

摘要翻译： 由于用于测量图形宽度的扫描电子显微镜（SEM）所需的测量精度变得严格，所以希望减少SEM之间的测量尺寸差异的技术。 然而，评估SEM之间的测量尺寸差异的常规技术不能分离SEM本身之间的测量尺寸与由图案本身的变形引起的尺寸变化之间的差异。 此外，减少SEM之间的测量尺寸的差异的技术需要一个操作者，用于减小每个测量图案形状的SEM之间的测量尺寸的差异。 在本发明中，通过各SEM测量同一位置的图案多次，并且计算通过各SEM得到的测量值的外推值之间的差异，由此SEM之间的测量尺寸差异之间的差异 并且由于图案本身的变形引起的尺寸变化成为可能。 此外，使用模拟SEM之间的光束直径差的SEM的SEM之间的匹配电子束图像轮廓可以减小SEM之间的测量尺寸的差异，而不依赖于尺寸测量图案形状。